• YAKHAK HOEJI
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• v.13 no.2_3
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• pp.62-66
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• 1969

Ten new N$^{4}$-furoylsulfonamides were synthesized such as N$^{4}$-furoyl-N$^{1}$-(4,6-dimethyl-2-pyrimidinyl) sulfanilamide (I), N$^{4}$-furoylsulfanilamide (II), N$^{4}$-furoyl-N$^{1}$-(2,6-dimethoxy-4-pyrimidinyl) sulfanilamide (III), N$^{4}$-furoyl-N$^{1}$-(4-methyl-2-pyrimidinyl) sulfanilamide (IV), N$^{4}$-furoyl-N$^{1}$-(6-methoxy-3-pyridazinyl) sulfanilamide (V), N$^{4}$-furoyl-N$^{1}$-2-pyrimidinylsulfanilamide (VI), N$^{4}$-furoyl-N$^{1}$-(3,4-dimethyl-5-isoxazolyl) sulfanilamide (VII), N$^{4}$-furoyl-N$^{1}$-2-thiazoilysulfanilamide (VIII), N$^{4}$-furoyl-N$^{1}$-(5-methoxy-2-pyrimidinyl) sulfanilamide (IX) and N$^{4}$-furoyl-N$^{1}$-(2,6-dimethyl-4-pyrimidinyl) sulfanilamide (X). They were obtained by the action of N$^{1}$-(4,6-dimethyl-2-pyrimidinyl) sulfanilamide, N$^{1}$-(2,6-dimethoxy-4-pyrimidinyl) sulfanilamide, N$^{1}$-(4-methyl-2-pyrimidinyl) sulfanilamide, N$^{1}$-(6-methoxy-3-pyridazinyl) sulfanilamide, N-2-pyrimidinyl sulfanilamide, N$^{1}$-(3,4-dimethyl-5-isoxazolyl) sulfanilamide, N$^{1}$-2-(thiazolysulfanilamide), N$^{1}$-(5-methoxy-2-pyrimidinyl) sulfanilamide and N$^{1}$-(2,6-dimethyl-4-pyrimidinyl) sulfanilamide with furoyl chloride in 4% NaOH solution. Of the above ten compounds, N$^{4}$-furoylsulfathiazole exhibited a good antibacterial action against Staphylococeus aureus and Escherichia coli.

• Journal of Bio-Environment Control
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• v.5 no.2
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• pp.120-130
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• 1996

Crisphead lettuce(Lactuca sativa L.) was grown in NFT to investigate the effects of NO$_3$-N and NH$_4$-N ratio in nutrient solution and elevated $CO_2$ treatment in the crisphead lettuce growth. This experiment has been conducted under three different ratios of NO$_3$-N:NH$_4$-N(100:0, 75:25, 50:50) with two $CO_2$ concentration (control, 1500ppm ). The results are as follows; 1. In the case of not controlling pH and EC in nutrient solution, pH was gradually increased in NO$_3$-N:NH$_4$-N=100:0 treatment but rapidly decreased in the nutrient solution 2. Daily changes of NO$_3$-N and NH$_4$-N were observed without controlling the nutrient solution. In the treatments of NO$_3$-N:NH$_4$-N ratios were 75:25 and 50:50, NO$_3$-N absorption rates were 27.7% and 26.1%, while NH$_4$-N absorption rates were 87.9% and 71.2%, respectively. 3. There was little differences in total nitrogen of leaves. However phosphorus, potassium, calcium and magnesium contents were highly shown in the treatment of $CO_2$ 1500ppm and 100:0 ratio of NO$_3$-N:NH$_4$-N. 4. Higher $CO_2$ assimilation rate was shown in plants grown under $CO_2$ 1500ppm and 100:0 ratio of NO$_3$-N:NH$_4$-N. It dropped significantly with the increase of NH$_4$- N rates in nutrient solution. 5. Fresh weight, leaf number, root length and root weight of crisphead lettuce were far better in the treatment of $CO_2$ 1500ppm and 100:0 ratio of NO$_3$-N:NH$_4$-N. Growth differences by $CO_2$ elevation were not shown in other NO$_3$-N:NH$_4$-N treatments. 6. The highest nitrate contents of leaves were shown in NO$_3$-N single treatment but shown the lowest vitamin C contents. Nitrate contents of leaves were decreased by $CO_2$ but the effect was slight treatment.

• Journal of Bio-Environment Control
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• v.18 no.1
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• pp.40-45
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• 2009

The experiment has investigated the effects of growth, yield, fruit quality and cation absorption of strawberry 'Akihime' in different $NO_3-N:NH_4-N$ ratio in nutrient solution. $NO_3-N:NH_4-N$ ratios were 5.5:0, 4.0:1.5 and $3.0:2.5me{\cdot}L^{-1}$. As the ratio of $NH_4-N$ increased, pH was decreased by $5.0{\sim}6.0$ and EC sustained $0.8{\sim}1.0dS{\cdot}m^{-1}$ during experiment. Though in high $NH_4-N$ ratio of $3.0:2.5me{\cdot}L^{-1}$, the absorption of cations(K, Ca and Mg) was not inhibited. Treatment in contained $NH_4-N$ showed a tendency of increasing of petiole length and leaf width. The fruit length, fruit width, fruit weight and soluble solids were not significantly different. Yield per plant was lowest in $4.0:1.5\;me{\cdot}L^{-1}$, of $NO_3-N:NH_4-N$ ratio. Malformation fruit has not shown during the whole growth period.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.603-608
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• 2017

$Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.

• Journal of Bio-Environment Control
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• v.2 no.2
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• pp.119-125
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• 1993

The effect of NO$_3$-N and NH$_4$-N ratio on the growth of Perilla frutescens in deep flow culture was studied in winter season. NO$_3$-N and NH$_4$-N were treated in the ratios of 12 : 0, 9 : 3, 6 : 6(me/ $\ell$ ). The pH of the nutrient solution was increased an NO$_3$-N:NH$_4$-N=12 : 0 treatment, and decreased in the treatments containing NH$_4$-N, greatly in NO$_3$-N : NH$_4$-N = 6 : 6 treatment. The EC was increased regardless of treatments, but more increased in the treatments containing NH$_4$-N. The stem-base circumference, plant height, root weight, shoot weight, and yields of leaves were by far the highest in NO$_3$-N:NH$_4$-N=6 : 6 treatment and the lowest in NO$_3$-N:NH$_4$-N= 12 : 0 treatment. Among the mineral contents of leaves, N, K, Fe and P were higher in the treatments containing NH$_4$-N. Ca, Mg and Mn were higher in NO$_3$-N :NH$_4$-N= 12 : 0 treatment.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.235-242
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• 2004

Si, NH$_4$Cl, NaN$_3$, NaCl, $N_2$ were used as raw materials for preparation of $\alpha$-Si$_3$N$_4$ powder. NH$_4$Cl and NaN$_3$ were used as additives, and NaCl was used as a diluent. Initial $N_2$ gas pressure in the SHS reactor was 60 atm. In preparation of $\alpha$-Si$_3$N$_4$, the reactivity and the properties of the products were examined with the various kinds of additives and the content of diluent. At first, the optimum reaction system for the preparation of $\alpha$-Si$_3$N$_4$ is examined and then the optimum composition was examined in the optimum reaction system. The optimum reaction system was Si-$N_2$-additive(NH$_4$Cl+NaN$_3$)-diluent(NaCl) and the optimum composition was 38 wt%Si+50 wt%(NH$_4$Cl+NaN$_3$)+12 wt%NaCl. The maximum fraction of $\alpha$-phase of Si$_3$N$_4$ produced in this condition was 96.5 wt% and the shape of the $\alpha$-Si$_3$N$_4$ produced in this condition was an irregular fiber with a length of 10 ${\mu}{\textrm}{m}$ and a diameter of 1 ${\mu}{\textrm}{m}$.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.242-247
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• 1998

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.236-242
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• 2001

HfN/Si$_3$N$_4$and NbN/Si$_3$N$_4$ multilayer coatings were deposited onto a high speed tool steel substrate by reactive sputtering and their mechanical properties were evaluated in terms of the dependence of hardness and adhesion strength on the sputter deposition process parameters. The hardnesses of both HfN/Si$_3$N$_4$and NbN/Si$_3$N$_4$ multiplayer coatings increase up to the flux ratio of 0.4 but nearly do not change after that as the $N_2$/Ar flux ratio in nitride sputter deposition increases. The hardnesses of both multiplayer coatings nearly do not change with annealing at low temperatures but decrease owing to oxidation with annealing at a high temperature like 80$0^{\circ}C$ after depositing the layers by sputtering. Post-annealing at low temperatures increases the adhesion strength of the multilayers. but high temperature annealing is not desirable since it decreases the adhesion strength besides the hardness deterioration.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.330-336
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• 1992

Four distinctive hot pressed and heat treated S${i_3}{N_4}$ceramics, S${i_3}{N_4}$-8%${Y_2}{O_3}$, S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$, S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$, 그리고 S${i_3}{N_4}$-1% MgO-1% Si$O_2$(in wt%), were prepared and characterized by X-ray diffraction, scanning electron microscopy, image analysis and mechanical tests. The fracture toughness of S${i_3}{N_4}$-8% ${Y_2}{O_3}$specimens containing large elongated grains showed the highest value of about 9.8MPa$m^{1/2}$. Two out of four S${i_3}{N_4}$, ceramics(S${i_3}{N_4}$-6% ${Y_2}{O_3}$-2% $A{l_2}{O_3}$and S${i_3}{N_4}$-4% ${Y_2}{O_3}$-3% $A{l_2}{O_3}$) heat treated at 200 $0^{\circ}C$retained the fracture strength of over 900MPa and fracture toughness of over 8.0MPa$m^{1/2}$. Large ${\beta}$-S${i_3}{N_4}$grains having a diameter larger than 1${\mu}$m appeared to contribute to increase in fracture toughness.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.577-582
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• 1999

In order to make the electroconductive $Si_3N_4$-TiN composities, the Si-Ti(N) compacts were nitrided at $1450^{\circ}C$ for 20hours, and then they were post-sintered by a gas-pressure-sintering technique at 1TEX>$1950^{\circ}C$ for 3.5 hours. As starting powders, commercial si powder of about $10\mu\textrm{m}$, two types of Ti powders of 100 and 325 mesh, and fine-sized TiN of $2.5\mu\textrm{m}$ powders were used. In the $Si_3N_4$-TiN sintered bodies used Ti powders, the relative density and fracture strength and electrical conductivity are low due to the existence of large amounts of coarse pores. However, in the $Si_3N_4$-TiN composite used TiN powder, the fracture toughness, fracture strength and electrical resistivity were $5.0MPa{\cdot}m^{1/2}$, 624MPa and $1400{\omega}cm$, respectively. The dispersion of TiN particles in the composite inhibited the growth of $Si_3N_4$ in the shape of rod and made strong strain field contrasts at the $Si_3N_4$-TiNinterfaces. It was recognized that microstructural control is required to improve the electrical conductivity and mechanical properties of $Si_3N_4$-TiN composites by dispersing TiN particles homogeneously.