• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1202-1207
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• 2003

Using a recently developed Hybric Plasma-Particle Accelerating Impact Deposition (HP-PAID) process, synthesis of nanostructured silicon coatings has been investigated by injecting vapor-phase TEOS (tetraethosysilane, (C$_2$H$\_$5/O)$_4$Si) into an Ar hybrid plasma. The plasma jet with reactants was expanded through nozzle into a deposition chamber, with the pressure dropping from 700 to 10 torr. Ultrafine particles accelerated in the free jet downstream of the nozzle, deposited by an inertial impaction onto a temperature controlled substrate. By using this process, nanostructured amorphous silicon coatings with grain size smaller than 10 nm could be synthesized. These samples were annealed in an Ar and crystallized at 900$^{\circ}C$ for 30 min. TEM analysis showed that the annealed coatings were also composed of nanoparticles smaller than 10 nm, which showed a good consistency that the average grain size of 7 nm was also estimated from a peak shift of 2.39 cm$\^$-1/ and Full Width at Half Maximum (FWHM) 5.92 cm$\^$-1/ of Raman analysis. The noteworthy is that a strong PL peak at 398 nm was also obtained for this sample, which indicates that the deposited coatings also contained 3∼4 nm nanostructured grains.

• Membrane Journal
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• v.10 no.2
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• pp.55-65
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• 2000

The porous silica membrane was prepared from Si(${OC}_2H_5)_4-H_2O$ system by sol-gel method. To investigate the characteristics of gels and porous silica membrane, we examined gels and porous silica membrane using TG-DTA, X-ray diffractometer, IR spectrophotometer, BET, SEM and TEM. The optimum mole ratio of Si(OC$_2$H$_{5}$)$_4$ : $H_2O$ $C_2$H$_{5}$OH for porous silica membrane was 1 : 4.5 : 4. The porous silica membrane was obtained by heat treatment of the gel above 700 $^{\circ}C$. The specific surface area of sintered gel was 3.8 $m^2$/g to 902.3 $m^2$/g at 100 $^{\circ}C$ to 1100 $^{\circ}C$ The pore size of sintered gel was in the range 20 $\AA$~ 50$\AA$. The particle size of sintered gel was 15 nm to 30 nm at 30$0^{\circ}C$ to 700$^{\circ}C$. The performance of the porous silica membrane was investigated for the separation of $H_2$/$N_2$ gas mixture. Gas separation through porous silica membrane depends upon Knudsen flow and surface flow. The veal separation factor($\alpha$) of $H_2$/$N_2$ was 5.17 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$), and tail separation factor( $\bar{B}$) increased as the pressure of permeation cell Increased.sed.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.381-381
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• 2009

염료감응형 태양전지의 효율 향상을 위한 다양한 방법들 중 $TiO_2$ 나노 파우더의 표면 개질 및 페이스트의 분산성 향상을 위한 연구가 활발하게 진행되고 있다. 기존 나노 파우더의 표면 개질법으로는 액상 공정인 졸겔법이 있으나 표면 처리 공정에서의 응집현상은 아직 해결해야 할 과제 중 하나이다. 이에 본 연구에서는 진공증착방법인 ALD법을 이용하여 염료감응형 태양전지용 $TiO_2$ 나노 파우더의 $SiO_2$ 산화물 표면처리를 통한 분산특성을 파악하였다. 기존 ALD법의 경우 reactor의 온도가 $300{\sim}500^{\circ}C$ 정도의 고온에서 공정이 이루어졌지만 본 실험에서는 2차 아민계촉매(pyridine)을 사용하여 reactor의 온도를 $30^{\circ}C$정도의 저온공정에서 $SiO_2$ 산화물을 코팅을 하였다. MO source로는 액체상태의 TEOS$(Si(OC_2H_5)_4)$를, 반응가스로는 $H_2O$를 사용하였고, 불활성 기체인 Ar 가스는 purge 가스로 각각 사용 하였다. ALD 공정에 의해 표면처리 된 $TiO_2$ 나노 파우더의 분산특성은 각 공정 cycle에 따라 FESEM을 통하여 입자의 형상 및 분산성을 확인하였으며 입도 분석기를 통하여 부피의 변화 및 분산 특성을 확인하였다. 공정 cycle 이 증가함에 따라 입자간의 응집현상이 개선되는 것을 확인 할 수 있었으며, 100cycles에서 응집현상이 가장 많이 감소하는 것을 확인할 수 있었다. 또한 표면 처리된 $SiO_2$ 산화막은 XRD를 통한 결정 분석 및 EDX를 통한 정성 분석을 통하여 확인하였다.

• Particle and aerosol research
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• v.6 no.2
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• pp.51-59
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• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.94-103
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• 2001

SiO$_2$ and PDMS/SiO$_2$ xerogels which are derived PDMS into TEOS have been synthesized by sol-gel process and controlled pore size and distribution through 2 step acid/base catalyzed processes using HCI and NH$_4$OH as a catalyst. In HCl catalyzed SiO$_2$ and PDMS/SiO$_2$ xerogels, pH and gellation time of xerogel were 2.3~2.5 and 12~13 days, respectively, and the shape of xerogel was identified to pellet type and column type. Under acidic condition of final reaction solution, the hydrolysis rate is accelerating, resulting in long gel times. The shape of xerogel is pellet type. In contrast, under less acidic condition, the condensation rate is accelerating, resulting in shorter gel times and the shape of xerogel is column type. The surface area and average Pore size were changed 400$\rightarrow$600($\m^2$/g) and 15$\rightarrow$28$\AA$, respectively, depending to the increase of the mole ratio of HCl/NH$_4$OH, and represented uniform pore size distribution. It is that all the alkoxide groups are hydrolyzed by HCl after the first step and the condensation rate is enhanced by NH$_4$OH. The regular backbone structures of silica are formed at low temperature and the uniform pores are produced by heat treatment.

• Applied Chemistry for Engineering
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• v.7 no.5
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• pp.823-831
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• 1996

At the ratio [$H_2O$]/[TEOS]=1.7, the silica sol was synthesized by partial hydrolysis in the presence of acid catalyst. After stabilizing the silica sol by trimethylsilylation, the molecular weight and viscosity of the sol obtained at various reaction times were examined to determine a best spinnability of the sol. Gel fibers were prepared from the sol solution after removing solvent in the solution, and the gel fibers were heated at $1,000^{\circ}C$. The prepared silica fibers were in the shape of circular cross-section and their tensile strength and $SiO_2$ purity were $83{\pm}20kg/mm^2$ and about 99.997%, respectively.

• Bulletin of the Korean Chemical Society
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• v.26 no.3
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• pp.418-422
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• 2005

By introducing spin-coating method to the evaporation induced self-assembly (EISA) process, a simple and reproducible route in controlling the mesophase of silica thin films has been developed for the first time in this work. When a comparatively solvent-rich Si-sol (The atomic ratio of TEOS : F127 : HCl : $H_2O$ : EtOH = 1 : 0.006 : 0.2 : 9.2 : 30) was used as coating solution, the mesophase of resultant silica films was selectively controlled by adjusting the spin-on speed. The cubic mesophase has been obtained from the coating at a low rpm, such as 600 rpm, while the 2-D hexagonal mesophase is formed at a high rpm, such as 2,500 rpm. At a medium coating speed, a mixture of cubic and hexagonal mesophase has been found in the fabricated films. The present results confirm that the evaporation rate of volatile components at initial step is critical for the determination of mesopore structures during the EISA process.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.71-72
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• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.317-322
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• 1998

The stabilization of low dielectric constant SiOF films prepared by conventional PECVD using TEOS and $C_2F_6$ was evaluated by the $N_2O$-plasma post-deposition annealing. Properties of SiOF film became unstable when it was air-exposed or heat-treated. Water absorption of SiOF films was increased as F content was increased due to the for¬mation of F -Si- F bonds. Also F content of SiOF films decreased after heat treatment. $N_2O$-plasma post-deposition annealing was proved to be effective on stabilizing SiOF films. which was mainly due to the formation of thin SiON layer near the top surface of films. However. the value of dielectric constant was greatly increased again when $N_2O$-plasma post-deposition annealing was done for a long time. To stabilize the SiOF films without an increase of dielec¬tric constant by $N_2O$- plasma post-deposition annealing. the annealing time should be kept the minimum value. to which stabilizing effects against air environment and heat treatment were preserved.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.143-143
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• 2010

다결정 실리콘 (Poly-Si)은 LPCVD를 이용하여 $750^{\circ}C$에서 증착하였다. 증착된 실리콘 박막은 실란, 수소 및 헬륨 가스를 이용하여 증착하였다. 성장된 poly-Si의 특성은 Raman spectroscopy 및 SEM을 이용하여 분석하였다. 헬륨 가스의 양을 15 sccm으로 고정하고 실란과 수소의 가스비를 60:0에서 20:40까지 가변시켰다. 활성화 에너지는 전류-전압 측정을 통해 Arrhenius plot을 이용하여 계산하였다. 박막 트랜지스터는 quartz 기판 위에 제작되었다. 게이트 절연막으로 TEOS $SiO_2$를 이용하였으며 source 및 drain 전극으로 Al을 이용하였다. 이 때 제작된 박막 트랜지스터의 전류 점멸비, 전계 효과 이동도, SS 및 문턱 전압은 각각 $10^5$, $76\;cm^2/V-s$, 167 mV/decade 및 1.43 V이었다.