• Journal of the Korean Institute of Gas
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• v.21 no.6
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• pp.52-60
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• 2017

In diffusion process exhaust line during semiconductor manufacturing process, In order to improve the transportation efficiency in the piping by removing "The reaction by-product, $ZrO_2$ and The unreacted material, TEMAZ, TMA, $O_3$, etc" and "Powder being deposited", the piping temperature was raised to $80^{\circ}C$ or more by using the heater jacket, and the bellows at the rear end of the vacuum pump ruptured. So conducted a case study and try to prevent the similar accidents from occurring through case studies. The causes of the accident were analyzed as follows: the inflow of outside air due to the generation of a gap on the suction side of the vacuum pump and heating the pipe with the heater jacket resulted in the overpressure in the pipe due to the volumetric expansion of the gas generated by decomposition of the unreacted TEMAZ, It can be assumed that the most vulnerable bellows of the piping has been ruptured. In order to prevent such accidents, This study is aimed to identify the cause of pipeline rupture accident and to establish safety measures for the prevention of similar accidents by evaluating physical hazards of TEMAZ, which is assumed to be the cause of pipe rupture accident.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.251-251
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• 2013

고 유전 박막을 이용하여 초고집적 DRAM용 캐패시터를 만들고자 하는 연구가 전세계 메모리 반도체 산업계에 걸쳐 활발히 이루어지고 있다. 본 연구는 High-k의 precursor인 Tetrakis (EthylMethylAmino) Zirconium) TEMAZ와 새로운 전구체인 Tris (dimethylamino) cyclopentadienyl Zirconium) CpZr (DMA)3의 열 안정성과 증착 특성을 비교하였다. in-situ Fourier tramsform infrared spectroscopy (FTIR)을 통해 long-term 열안정성을 확인하였다. 증착과 동시에 자체개발한 FTIR-cell을 이용하여 Gas phase를 실시간으로 확인하였다. 증착 sample은SEM과 AFM을 통해 박막 특성 비교를 하였다.