• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.62-67
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• 2015

The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope (SEM). The characteristics of the carbon microsphere were investigated by X-ray photoelectron spectroscopy (XPS) and a high resolution-transmission electron microscope (HR-TEM). From these measurements, the diameters of carbon sphere were about few hundred micrometers. Furthermore, we show that the carbon microsphere of the core-shell type by mixed-source HVPE method can be grown successfully with the larger size than those of the existing one. This mixed-source HVPE method is proposed a new method for making of carbon microsphere.

• Korean Journal of Microbiology
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• v.45 no.2
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• pp.163-169
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• 2009

This study was performed to investigate the type of extended-spectrum $\beta$-lactamases (ESBL) produced by bacteria isolated from the sewage of wastewater treatment plant at Minragdong, Suyong-gu in Busan. The facility is located at sushi restaurants and guides its drain water to the wastewater treatment plant at Yonghodong, Nam-gu in Busan. Samples were collected on January, 2009. A total of 19 strains were selected as potential ESBL positive strains through a double disk synergy test. On the basis of the results from biochemical tests including indole, methyl-red, Voges-Proskauer, Simmon's citrate, decarboxylase-dihydrolase and sugar-fermentation tests, the 19 strains were identified with 16 strains of Escherichia coli and 3 strains of Klebsiella pneumoniae. Out of 19 strains, 4 transconjugants against Escherichia coli J53, which is sodium azide resistant recipient strain, were obtained. The plasmids isolated from transconjugants were used for PCR analysis. The type of each extended-spectrum $\beta$-lactamase (ESBL) produced by the strains was determined on the basis of isoelectric focusing analysis and DNA sequencing. The results indicated that the types of ESBL from Klebsiella pneumoniae were SHV-12 (3 strains), and Escherichia coli was SHV-12/TEM-1 (1 strain), respectively.

• Journal of the Korean Electrochemical Society
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• v.6 no.4
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• pp.266-270
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• 2003

The $LiN_{0.8}Co_{0.2}O_2$ has shown outstanding electrochemical properties. The microstructure of $LiN_{0.8}Co_{0.2}O_2$ cathode was investigated by using TEM (transmission electron microscopy) and X-ray diffraction techniques. The $LiN_{0.8}Co_{0.2}O_2$ was produced by sol-gel method to synthesize fine particles less than $1{\mu}m$ in the average diameter. In this study, emphasis was given to the examination and interpretation of the microstructural change during charge-discharge cycling experiments, which appeared to be one of the main causes of early degradation of rechargeable batteries. Results showed that the $1{\mu}m$ cathode produced by sol-gel method had high reversible capacity and excellent cycling stability due to its homogeneous distribution of Ni and Co cations on u atomic scale. In particular, the $1{\mu}m$ cathode did not show severe strain induced structural defects or cubic spinel disordering during cycling experiments, which had been observed in the conventional $LiCoO_2$ cathode. The $LiNi_{0.8}Co_{0.2-x}M_x[M=Al]$ compounds show good reversibility but low discharge capacity.

• Journal of Veterinary Clinics
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• v.32 no.2
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• pp.191-195
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• 2015

A 7-year-old castrated male Korean Shorthair cat was referred with lethargy and anorexia. Laboratory examination revealed moderate degenerative changes of peripheral neutrophils on blood smear examination and decreased levels of free and total thyroxine ($T_4$) as well as bacterial growth on blood culture. Molecular analyses of the 16S ribosomal RNA gene and heat shock protein 60 gene confirmed the bacterium as Enterobacter cloacae. A minimal inhibitory concentration test showed multidrug resistance of the bacterium against 16 antibiotics. Polymerase chain reaction (PCR) and subsequent sequencing specifically for $bla_{TEM}$, $bla_{SHV}$, $bla_{CTX-M}$, and plasmid-mediated ampC genes revealed positive results to $bla_{TEM-1}$, $bla_{CTX-M-15}$, and plasmid-mediated $bla_{ACT-1}$ genes, indicating that the isolated bacterium contains plasmids containing genes encoding extended-spectrum beta-lactamase and plasmid-mediated ampC beta-lactamase. After 1 month of treatment with antibiotics and levothyroxine, the cat's condition improved; both the thyroid function test and the blood culture showed no abnormalities. This is the first report of community-acquired multidrug-resistant E. cloacae-induced euthyroid sick syndrome in a cat. By the prompt diagnostic procedures and properly selected antibiotic therapy, the cat was recovered from the multidrug-resistant bacterium-induced septicaemia.

• Korean Journal of Microbiology
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• v.37 no.4
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• pp.277-283
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• 2001

The emergence of extended spectrum beta-lactamase(ESBL) producing bacteria is causing very serious problems in Korea. Although there have been many reports about these bacteria isolated from patients and clinical specimens, there is no report of ESBL-producing organisms isolated from natural evironment in Korea. This is the first study on the ESBL producing bacteria out of the medical system in Korea. Twenty-six ESBL producing bacteria were isolated only from sewerage plant drain water at Kwang-an beach among the sampling collected sites including snakehead fish plants in Myungi, Aquaculture Engineering Lab. in Pukyong National University and two public-bathrooms in Pusan, Korea. ESBL producing bacteria were identified by double-disk synergy test, conjugation, isoelectric focusing values and PCR. The species of ESBL producing bacteria were Enterobacter cloacae(4 strains), E. sakazakii(8 strains), Klebsiella pneumoniae subsp. pneumoniae(8 strains) and K. pneumoniae subsp. ozaenae(6 strains). TEM and SHV specific PCR products were detected from all the ESBL strains produced TEM+SHV products on the PCR plates. The pI values of ESBL produced by Klebsiella pneumoniae subsp. pneumoniae, K. pneumoniae subsp. ozaenae, Enterobacter cloacae, and E. sakazakii were 5.9, 5.9+5.4; 5.9, $5.9+5.4;{\ge}8.5$, 8.0+5.4, and 8.0+5.4, respectively on the IEF. Seven strains of the isolates were transfered their genes to E. coli RG488 $Rif^r$ by conjugation.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.733-741
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• 1996

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.184-188
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• 2001

Using a DC-sputter and changing the substrate temperature to room temperature and 200$\^{C}$, we manufactured each Co-22%Cr alloy thin-films, which has a uniform micro-structure at room temperature, and a fine self-organized nato structure (SONS) at the inside of the grain at the elevated temperature. We also investigated the microstructure and domain structure using a transmission electron microscope (TEM) and a magnetic force microscope (MFM). We managed to corrode selectively Co-enriched phase, then investigate the microstructure using a TEM. We found that it has a uniform composition when it is manufactured at room temperature, but, we found that it has a unique microstructure, which has a plate-like fine Co-enriched phase, with the formation of SONS at the inside of the grain at the elevated temperature. In MFM characterization, we found maze-type domains at the period of 5000 when the substrate temperature maintains at room temperature. We define that the maze-type domain has a disadvantage at the high density recording because it generates noises easily as the exchange coupling energy between the grains is big. On the other hand, there is only a fine domain structure at the period of 500 when the substrate temperature maintains at 200 $\^{C}$. We define that the fine domain structure has an advantage at the high density magnetic recording because it has thermal stability due to small exchange coupling energy.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.49-56
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• 2002

In this study, the InGaP epilayers were grown on the exact and the $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle $6^{\circ}$. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle $6^{\circ}$. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle $6^{\circ}$. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is $6^{\circ}$.

• Journal of Life Science
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• v.17 no.10
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• pp.1426-1433
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• 2007

To investigate the antibiotic resistant patterns of the bacteria producing ESBL, we isolated one organism of Klebsiella pneumoniae from a clinical laboratory in Busan. The organism that produces ESBL gene was detected by double disk synergy test and the presence of three ESBL genes (TEM-1, SHV-12, CTX-M-15) was confirmed by polymerase chain reaction and DNA sequencing analysis. To analyse the characteristics of three ESBL genes, we performed transconjugation, transformation and cloning experiment with the organism. The MIC of Klebsiella pneumoniae was revealed that ceftazidime, cefotaxime and ceftriaxone were $256\;{\mu}g/ml,\;128\;{\mu}g/ml\;and\;128\;{\mu}g/ml$ respectively. The MIC of conjugant (E. coli $RG176^{Na(r)}$) af was revealed that ceftazidime, cefotaxime and ceftriaxone were $256\;{\mu}g/ml,\;64\;{\mu}g/ml\;and\;128\;{\mu}g/ml$ respectively. The MIC of transformant (E. cofi $DH5{\alpha}$) was revealed that ceftazidime, cefotaxime and ceftriaxone were $128\;{\mu}g/ml,\;32\;{\mu}g/ml,\;and\;32\;{\mu}g/ml$ respectively, The MIC of cloned organism of SHV-12 gene (E. coli $DH5{\alpha}$) was revealed that ceftazidime, cefotaxime and ceftriaxone were $128\;{\mu}g/ml,\;8\;{\mu}g/ml,\;and\;32\;{\mu}g/ml$ respectively. The results indicated that MIC of conjugant was higher than MIC of transformant and also SHV-12 gene were not resistant against cefotaxime antibiotic.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.961-968
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• 1998

In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.