• Title/Summary/Keyword: TEM Journal

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Low Temperature Synthesis of Forsterite Powders by the Geopolymer Technique (지오폴리머 기술에 의한 포스테라이트 분말의 저온합성)

  • Son, Se-Gu;Lee, Ji-Hyeon;Lee, Sang-Hoon;Kim, Young-Do
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.242-248
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    • 2009
  • Forsterite is a crystalline magnesium silicate with chemical formula $Mg_2SiO_4$, which has extremely low electrical conductivity that makes it an ideal substrate material for electronics. In this study, forsterite precursors were synthesized with magnesium silicate gels from the mixture of magnesium nitrate solution and various sodium silicate solution by the geopolymer technique. Precursors and heattreated powders were characterized by thermogravimetrical differential thermal analyzer(TG-DTA), X-ray diffractometer(XRD), scanning electron microscopy(SEM), Si magic angle spinning nuclear magnetic resonance(MAS-NMR), transmission electron microscopy(TEM). As the result of analysis about the crystallization behavior by DTA, the synthesized precursors were crystallized in the temperature range of $700^{\circ}C$ to $900^{\circ}C$. The XRD results showed that the gel composition began to crystallize at various temperature. Also, it was found that the sodium orthosilicate based precursors(named as 'FO') began to crystallize at above $550^{\circ}C$. The FO peaks were much stronger than sodium silicate solution based precursors(named as 'FW'), sodium metasilicate based precursors(named as 'FM') at $800^{\circ}C$. TEM investigation revealed that the 100nm particle sized sample was obtained from FO by heating up to $800^{\circ}C$.

Microstructure of GaN films on sapphire{1120} surfaces (사파이어 {1120} 표면에 증착된 GaN 박막의 미세구조)

  • 김유택;박진호;신건철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.377-382
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    • 1998
  • GaN epilayers having good adhesion and quality were obtained directly on the sapphire {1120} substrates by the OMVPE method without introducing a buffer layer at the lower temperature. The preferred orientations of epilayers turned out to be <0002> and at least 4 kinds of epilayers were competitively grown. Slight distortions of lattices caused by lattice mismatches between sapphire and GaN were observed at the lattices within 2~3 nm region from the interface. Accordingly, TEM investigation revealed that GaN epilayers could be grown on sapphire {1120} planes without a buffer layer.

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Preparation of Au fine particle dispersedf $TiO_{2}$ film by sol-gel and photoreduction process (Sol-Gel and photoreduction 공정에 의한 Au 미립자분산 $TiO_{2}$ 박막 제조)

  • 현부성;김병일;강원호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.23-28
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    • 1999
  • Au fine particles dispersed $TiO_{2}$ film was prepared on silica glass substrate by sol-gel dipping and firing process. The $TiO_{2}$ films were fabricated from the system of titanium tetraisopropoxide-EtOH-HCl-$H_{2}O$-hydrogen tetrachloroaurat (III) tetrahydrate. The conditions for the formation of clear solution and dissolving high concentration of Au compound were examined. Photoreduction process was adopted to control the size of gold metal particles. Phase evolution of matrix $TiO_{2}$ and variation of Au particle with UV irradiation were investigated by XRD, SEM, TEM and UV-visible spectrophotometer. The effect of CPCl (Cetylpyridinium chloride monohydrate) as a dispersion agent was evaluated.

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Effect of raw materials for the synthesis of TiO2 powders by a hydrothermal processing

  • Park, Jungju;Choi, Yeon Bin;Son, Jung Hun;Bae, Dong-Sik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.4
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    • pp.166-169
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    • 2018
  • $TiO_2$ nanoparticles were prepared under high temperature and pressure conditions by precipitation from titanium tetrachloride ($TiCl_4$) and titanium isopropoxide (TTIP). $TiO_2$ powders were obtained in the temperature range of $150^{\circ}C{\sim}190^{\circ}C$ for 4 h. The microstructure and phase of the synthesized particles were studied by TEM and XRD. TEM and X-ray diffraction pattern shows that the synthesized particles were crystalline. The average sizes of the synthesized particles from titanium tetrachloride and titanium isopropoxide were below 20 nm and 10 nm, respectively. The average size of the synthesized particles increased with increasing reaction temperature. The effects of synthesis parameters, such as the reaction temperature and pH value are discussed.

Detection of beta-lactam antibiotic resistant genes in Escherichia coli from porcine fecal samples using DNA chip

  • Park, Nam-Yong;Na, Sung-Ho;Cho, Ho-Seong
    • Korean Journal of Veterinary Service
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    • v.30 no.4
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    • pp.505-510
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    • 2007
  • This study was conducted to detect ${\beta}$-lactam antibiotic-resistant genes in the 400 E coli isolates from porcine fecal samples in Korea by a DNA chip. The DNA chip contains the specific probe DNAs of the ${\beta}$-lactam antibiotic-resistant genes that had been labeled with a mixture of primer set designed to amplify specific genes (PSE, OXA, FOX, MEN, CMY, TEM, SHV, OXY and AmpC) using a multiplex polymerase chain reaction (PCR). Of 400 isolates 339 contained at least one ${\beta}$-lactamases gene. Resistance to ${\beta}$-lactamases was mediated mainly by AmpC (n = 339, 100%), and followed by TEM (n = 200, 59.0%), CMY (n = 101, 29.8%), PSE (n = 30, 8.9%) and both OXA and SHV genes (n = 20, 5.9%), while the FOX, MEN and OXY genes were not detected. The other sixty-one did not contain any ${\beta}$-lactamase genes even though they were resistant to antimicrobial drugs. In conclusion, the DNA chip system can be used as a rapid and reliable method for detecting of ${\beta}$-lactamases genes, which will help veterinarians select the antibiotics for monitoring and treating of animal diseases.

Synthesis of Nanosized Titanium-Colloid by Sol-Gel Method and Characterization of Zinc Phosphating (졸-겔법에 의한 나노크기의 티탄-콜로이드 합성 및 인산염 피막 특성)

  • Lee Man Sig;Lee Sun-Do
    • Journal of Surface Science and Engineering
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    • v.38 no.1
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    • pp.37-43
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    • 2005
  • Nanosized titanium-colloid particles were prepared by sol-gel method. The physical properties, such as thermal stability, crystallite size and crystallinity according to synthesis condition have been investigated by TEM, XRD, SEM, TGA and DTA. In addition, Zinc phosphating has been studied in order to compare the phosphating characterization of prepared nanosized titanium-colloid particles. The major phase of all the prepared titanium-colloid particles was an amorphous structure regardless of synthesis temperature and the structure was composed of phoshate complex and titanium. The micrographs of HR- TEM showed that nanosized titanium-colloid particles possessed a spherical morphology with a narrow size distribution. The crystallite size of the titanium-colloid particles synthesized at 80℃ was 4-5 nm and increased to 8-10 nm with an increase of synthesis temperature (150℃). In addition, the coating weight increased with an increase of temperature of phosphating solution and when the concentration of titanium-colloid was 2.0 g/l, the coating weight was 1.0 g/㎡.

Quantitative Analysis of Ultrathin SiO2 Interfacial Layer by AES Depth Profilitng

  • Soh, Ju-Won;Kim, Jong-Seok;Lee, Won-Jong
    • The Korean Journal of Ceramics
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    • v.1 no.1
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    • pp.7-12
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    • 1995
  • When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

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Zinc Vacancy Ordering in BaTEX>$(Zn_1/3Ta2/3)O_3$Ceramics

  • Park, Seong-Jin;Sahn Nahm;Kim, Myong-Ho;Byun, Jae-Dong
    • The Korean Journal of Ceramics
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    • v.2 no.4
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    • pp.242-245
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    • 1996
  • The microstructure of $Ba (Zn_{1/3}Ta_{2/3})O_3$ (BZT) was investigated using X-ray diffractometry(XRD) and transmission electron microscopy (TEM). $Ba_{0.5}TaO_3$ and $Ba_3TaO_{5.5}$ (BT) phasses were observed on the surface of the sintered specimen by XRD. Furthermore, a new type of ordering along the [110] direction was found in sintered specimen by the XRD and TEM analysis. The wavelength of ordering was 0.9 nm which is three times larger than the interplanar distance of (110) plane and new type of ordering is considered to be a result of Zn vacancy ordering. The creation of Zn vacancies and formation of BT phases are attributed to the evaporation of volatile ZnO. A new mechanism for ZnO loss is suggested. In this mechanism, only Zn vacancies are created only when the amount of ZnO loss is small and as the amount of ZnO loss increases, BT phases are formed at the same time. A new unit cell of ordered structure is suggested as the superlattics containing three BZT unit cells.

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Synthesis of Boron-Nitride Film by Plasma Assisted Chemical Vapor Deposition Using $BCl3-NH3-Ar$ Mixed Gas ($BCl3-NH3-Ar$계의 플라즈마화학증착공정을 이용한 질화붕소막의 합성)

  • 박범수;백영준;은광용
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.249-256
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    • 1997
  • The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

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Synthesis and Their Properties of (0.8PPV+0.2DMPPV)/Silica Glass, Borosilicate Glass Composites by Sol-Gel Process (Sol-Gel법을 이용한 (0.8PPV+0.2DMPPV)/Silica Glass, Borosilicate Glass 복합체의 합성과 그 특성)

  • 이병우;김병호;윤영권;한원택
    • Journal of the Korean Ceramic Society
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    • v.34 no.9
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    • pp.993-1001
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    • 1997
  • The (0.8PPV+0.2DMPPV) copolymer and silica/borosilicate composites were synthesized by sol-gel process. The organic-inorganic hybrid solution was prepared by using of (0.8PPV+0.2DMPPV) copolymer precursor solution as a raw material for organic components and TEOS and TMB for glass components. Then by drying the solution in vacuum at 5$0^{\circ}C$ for 7days and subsequent heat treatment in vacuum at 15$0^{\circ}C$~30$0^{\circ}C$ for 2h~72h with heating rate of 0.2$^{\circ}C$/min and 1.8$^{\circ}C$/min, the organic-inorganic composites were synthesized. Microstructural evolution of the composites was characterized by DSC, IR spectrocopy, UV/VIS spectroscopy, and TEM. Elimination of the polymer precursor and degradation of the polymer were observed by DSC and Si-O and trans C=C absorption peaks were identified by IR spectra. The polymer was found to be successfully incorporated into the glass matrix and it was confirmed by the absorption peaks from the polymer in the UV/VIS spectra and the TEM results. The absorption peak of the composites was found to shift toward short wavelength side compared to that of the pure polymer and the amount of the blue shift increased with increasing the heat treatment temperature and heat treatment time and with decreasing the heating rate.

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