• Title/Summary/Keyword: TAPC

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Effects of BCP Thickness on the Electrical and Optical Characteristics of Blue Phosphorescent Organic Light Emitting Diodes (BCP 두께가 청잭 인광 OLED의 전기 및 광학적 특성에 미치는 영향)

  • Seo, Yu-Seok;Moon, Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.781-785
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    • 2009
  • We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses (25 and 55 nm) of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) electron transport layers. 1,1-bis[4-bis (4-methylphenyl)- aminophenyllcyclohexane (TAPC), bis[(4,6-di-fluorophenyl)-pyridinate-$N,C^{2'}$]picolinate (FIrpic) and N,N' -dicarbazolyl-3,5-benzene (mCP) were used as hole transport, blue guest and host materials, respectively. The driving voltage, electroluminescence (EL) efficiency and emission characteristics of devices were investigated. The maximum EL efficiency was 20 cd/A in the device with 55 nm BCP layer, which efficiency was about 33% higher than the device with 25 nm BCP layer. The higher efficiency in the 55 nm BCP device resulted from the enhanced electron-hole balance. In the EL spectrum of blue phosphorescent OLED with BCP layer, the relative intensity between 470 and 500 nm peaks was related to the location of emission zone.

2-Wavelength Organic Light-Emitting Diodes Using Bebq2 Selectively Doped with (pq)2Ir(acac) (Bebq2에 (pq)2Ir(acac)가 선택 도핑된 2-파장 유기발광다이오드)

  • Kim, Min-Young;Ji, Hyun-Jin;Jang, Ji-Geun
    • Korean Journal of Materials Research
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    • v.21 no.4
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    • pp.212-215
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    • 2011
  • New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

2-Wavelength Organic Light-Emitting Diodes by selectively doping of RP-411 in the Host of $Bebq_2$ ($Bebq_2$ 호스트에 RP-411을 선택 도핑한 2-파장 유기발광 다이오드)

  • Kim, Min-Young;Jang, Ji-Geun
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.1
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    • pp.23-26
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    • 2011
  • New organic light-emitting diodes with structure of ITO/DNTPD/TAPC/$Bebq_2/Bebq_2$:RP-411/ET-137/LiF/Al using the selective doping of 5% RP-411 in a single $Bebq_2$ host in the two wavelength(green, red) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of $Bebq_2$, three kinds of devices with different thicknesses of 30${\AA}$, 40${\AA}$ and 50${\AA}$ in the doped emitter of $Bebq_2$:RP-411 were fabricated. The electroluminescent spectra showed two peak emissions at the same wavelengths of 511 nm and 622 nm for the fabricated devices. When the device with a 30${\AA}$-thick doped emitter is referred as "D-1", the device with a 40${\AA}$-thick doped emitter is referred as "D-2" and the device with a 50${\AA}$-thick doped emitter is referred as "D-3", the relative intensity of 622 nm to 511 nm at two wavelength peaks was higher in the D-2 and the D-3 than in the D-1. The devices of D-1, D-2 and D-3 showed the color coordinates of (0.43, 0.46), (0.46, 0.44) and (0.48, 0.43) on the CIE chart, respectively.

Fabrication and Characterization of High Luminance WOLED Using Single Host and Three Color Dopants (단일 호스트와 3색 도펀트를 이용한 고휘도 백색 유기발광다이오드 제작과 특성 평가)

  • Kim, Min Young;Lee, Jun Ho;Jang, Ji Geun
    • Korean Journal of Materials Research
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    • v.26 no.3
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    • pp.117-122
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    • 2016
  • White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.