• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.1
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• pp.24-31
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• 2019

The current study demonstrates an efficient procedure to create ingots from $Al_2O_3$ powder using the skull melting method to use these ingots as a starting material in conventional methods for growing synthetic single-crystal sapphire. Dimension of the cold crucible was 24 cm in inner diameter and 30 cm in inner height, 15 kg of $Al_2O_3$ powder was completely melted within 1 h at an oscillation frequency of 2.75 MHz, maintained in the molten state for 3 h, and finally air-cooled. The areal density and components of the cooled ingot by parts were analyzed through scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDS). The areal density and $Al_2O_3$ content of the ingot were related to the temperature distribution inside the cold crucible during high-frequency induction heating, and the area with high temperature was high tends to be high in areal density and purity.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.24-32
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• 2001

High temperature platinum resistance thermometers(HTPRTs) were designed and fabricated using a synthetic sapphire single crystal as sensor former, insulation and protection tube, and its characteristics was investigated. Several fixed points measurement showed that the sapphire HTPRTs were satisfied with the ITS-90 criteria as the interpolating thermometer. The temperature-resistance characteristics of HTPRT was fitted to the quadratic relationship in the temperature range from $500^{\circ}C$ to $1500^{\circ}C$. The reproducibility of Cu freezing point realized using the sapphire HTPRT was ${\pm}19.2\;mK$. The insulation resistance of the HTPRT exponentially decreased as temperature increased, and showed to $63\;k{\Omega}({\sim}31.5\;mK)$ at $1500^{\circ}C$.