• Title/Summary/Keyword: Switching speed

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Optimazation of Fuzzy Systems by Switching Reasoning Methods Dynamically

  • Smith, Michael H.;Takagi, Hideyuki
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1993.06a
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    • pp.1354-1357
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    • 1993
  • This paper proposes that the best reasoning(i.e. rule evaluation) method which should be used in a fuzzy system significantly depends on the reasoning environment. It is shown that allowing for dynamic switching of reasoning methods leads to better performance, even when only two different reasoning methods are considered. This paper discusses DSFS (Dynamic Switching Fuzzy System) which dynamically switches and finds the best reasoning method (from among 80 different possible reasoning methods) to use depending on the reasoning situation. To overcome the reasoning speed and memory problem of DSFS due to its computational requirements, the DSFS Switching Reasoning Table method is proposed and its higher performance as compared to a conventional fuzzy system is shown. Finally, efforts to obtain general relationships between the characteristics of different reasoning methods and the actual control surface/environment is discussed.

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Simultaneous Switching Noise Reduction Technique in Multi-Layer Boards using Conductive Dielectric Substrate (전도성 유전기판을 이용한 다층기판에서의 Simultaneous Switching Noise 감소 기법)

  • 김성진;전철규;이해영
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.4
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    • pp.9-14
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    • 1999
  • In this paper, we proposed a simultaneous switching noise (SSN) reduction technique in multi-layer boards (MLB) for high-speed digital applications and analyzed it using the Finite Difference Time Domain (FDTD) method. The new structure using conductive dielectric substrates is effective for the reduction of SSN couplings and resonances. The uniform insertion of the conducive layer reduced the SSN coupling and resonance by 85% and the partial insertion only around the edges reduced by 55% respectively.

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A Switching Technique for Common Mode Voltage Reduction of 2-Level Inverter (2-레벨 인버터의 전도노이즈 저감을 위한 스위칭 기법)

  • Yun Hwan-Kyun;Kim Lee-Hun;Kim Jun-Ho;Won Chung-Yuen;Choi Ki-Soo;Bae Joung-Hwan
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.434-437
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    • 2001
  • Much attention has given to EMI effects created by variable speed ac drive system. This paper focuses on the switching technique to mitigate common mode voltage. Zero switching states of inverter control invoke large common mode voltage. Using inversed carrier wave, zero switching states are removed. In addition, proposed technique is easy to apply to existing 2-level inverter design. Simulation results show that common mode voltages adapting proposed technique are reduced regarding conventional method.

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A Measurement of Switching Surge Voltage using Voltage Type Inverter (전압형 인버터 스위칭 서지전압 측정)

  • Kim, Jong-Gyeum;Lee, Eun-Woong;Kim, Il-Jung
    • Proceedings of the KIEE Conference
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    • 2002.06a
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    • pp.16-21
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    • 2002
  • Most adjustable-speed drives(ASDs) designed to operate 220[V] induction motors incorporate voltage-source inverters (VSIs), which create motor voltages at high switching frequencies. The motor leads used to connect an ASD to a motor can behave like transmission lines for voltage pulses, which can be amplified (reflected) at the motor terminals. The resulting oscillatory transient, known as the long-lead effect, can stress and consequently degrade the statorinsulation system of a motor. This Brief describes the results of tests to 1) determine the correlation between peak motor voltage and the length of motor leads and 2) determine the correlation between peak motor voltage and the switching frequency of the ASD Insulation failures like this usually are caused by voltage surges. Voltage surges are often the result of switching power circuits, lightning strikes, capacitor discharges and solid-state power devices.

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Implementation of crowbar circuit for high-speed discharge·charge switching and its characteristic analysis (고속 방전·충전 스위칭 전원차단회로 설계 제작 및 특성분석)

  • Lee, Min-woong;Cho, Seong-ik;Lee, Nam-ho;Jeong, Sang-hun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.885-892
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    • 2017
  • In this paper, we proposed a novel crowbar circuit for high-speed discharge charge switching to solve discharge charge-time delay of supply voltage in the conventional crowbar circuit. The proposed circuit is designed to increase the charge-speed after high-speed discharge of supply voltage, thereby reducing the time exposed to radiation damage and, the normal operation time of electronic system after passing the pulse radiation. The simulation of the discharge charge-times before the implement of the hardware is conducted using Cadence's pspice tool, and DUT (Device Under Test) board is fabricated in the device level. The comparison measurement of the crowbar circuits is performed on the satellite-electronic device for 24V. As the result, we confirmed the high-speed function of the proposed circuit by improvement of the discharge-speed 96.8% and the charge-speed 27.3% as compared with the conventional circuit.

Mixed-mode simulation of switching characteristics of SiC DMOSFETs (Mixed-mode 시뮬레이션을 이용한 SiC DMOSFET의 스위칭 특성 분석)

  • Kang, Min-Seok;Choi, Chang-Yong;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.37-38
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    • 2009
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

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Characteristic of Three-Phase Voltage Type Soft-Switching Inverter using the Novel Active Auxiliary Resonant DC Link Snubber (새로운 액티브 보조 공진 DC 링크 스너버를 이용한 3상 전압형 소프트 스위칭 인버터의 특성)

  • Sung, Chi-Ho;Heo, Young-Hwan;Mun, Sang-Pil;Park, Han-Seok
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.65 no.2
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    • pp.114-121
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    • 2016
  • This paper is Instant space vector PWM(Pulse Width Modulation)power conversion devices in switching power semiconductors from my generation to losses and switching when the voltage surge and current surge of electronic noise(EMI: Electro Magnetic Interference / RFI: Radio Frequency Interference)to effectively minimize the power soft-switching power conversion circuit topologies of auxiliary resonant DC tank for the purpose of high performance realization of the electric power conversion system by the high-speed switching of a semiconductor device(AQRDCT simultaneously : an active auxiliary resonance using auxiliary Quasi-resonant DC tank)DC link snubber switch has adopted a three-phase voltage inverter. AQRDCL proposed in this paper can reduce the effective and current peak stress of the power semiconductors of the auxiliary resonant snubber circuit compared to the conventional active-resonant DC link snubber, it is not necessary to install the clamp switch of the auxiliary resonant DC link, DC the peak current and power loss of the bus line can be reduced.

A Study on the Immunity Improvement of Semiconductor Switching Components (반도체 스위칭소자의 내성특성 개선에 관한 연구)

  • 민경찬;김동일
    • Journal of the Korean Institute of Navigation
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    • v.21 no.3
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    • pp.75-81
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    • 1997
  • The switching components to control the speed of dc motor, which perform vital fuction in a modern motor vehicle or a ship, are susceptibile to suffer damage or upset by switching transient. An equivalent circuit was derived, in this paper, to select an ideal component having immunity against the switching transient among varisotor, zenner diode, etc. Furthermore, we have carried out the optimal improved transient protection circuit design in the view of cost effectiveness, proper wave form of transient defined by the international regulations. The process and cause of the damages in the switching components were examined. Then, the immunity improvement of semiconductor switching components to control a dc motor has been achieved considering impedance condition accoring to the variation of the diverting transient current.

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High Speed Response Time of Nematic Liquid Crystal Mixtures for LCD Monitor and TV Applications

  • Kim, Y.B.;Hur, I.K.
    • Journal of Information Display
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    • v.2 no.3
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    • pp.32-38
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    • 2001
  • The most important parameter for TV application of LCD is a fast switching time for the display of moving image. To achieve faster switching time, the novel LC single materials with large dielectric anisotropies ($16{\sim}20$), high clearing temperatures ($195.5{\sim}237.4^{\circ}C$), broad nematic ranges (up to 169.9 $^{\circ}C$) and high birefringence ($0.254{\sim}0.2200$) were developed. KUR-series LC mixtures blended these single materials having significantly higher clearing temperatures and dielectric anisotropy values compared with conventional LC mixture. Especially, their clearing temperatures are $10{\sim}30^{\circ}C$ higher than their host mixture. These LC mixtures showing about lOms of high-speed switching time in Tv/Monitor of TFT LCD, is short enough to be addressed in a single time frame of 60Hz (16.7 ms). The threshold voltage $V_{th}$ was low enough to operate at a driving voltage of 5 V. The VHR values were found to be high enough for TFT-LCD in wide temperature range. Our novel LC mixtures are suitable materials for the inclusion in to LC mixtures for TV application of TN-LCD

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Partial EBG Structure with DeCap for Ultra-wideband Suppression of Simultaneous Switching Noise in a High-Speed System

  • Kwon, Jong-Hwa;Kwak, Sang-Il;Sim, Dong-Uk;Yook, Jong-Gwan
    • ETRI Journal
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    • v.32 no.2
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    • pp.265-272
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    • 2010
  • To supply a power distribution network with stable power in a high-speed mixed mode system, simultaneous switching noise caused at the multilayer PCB and package structures needs to be sufficiently suppressed. The uni-planar compact electromagnetic bandgap (UC-EBG) structure is well known as a promising solution to suppress the power noise and isolate noise-sensitive analog/RF circuits from a noisy digital circuit. However, a typical UC-EBG structure has several severe problems, such as a limitation in the stop band's lower cutoff frequency and signal quality degradation. To make up for the defects of a conventional EBG structure, a partially located EBG structure with decoupling capacitors is proposed in this paper as a means of both suppressing the power noise propagation and minimizing the effects of the perforated reference plane on the signal quality. The proposed structure is validated and investigated through simulation and measurement in both frequency and time domains.