• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.643-645
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• 1999

The conventional high frequency phase-shifted full bridge dc/dc converter has a disadvantage that a circulating current flows through transformer and switching devices during the freewheeling interval. Due to this circulating current, RMS current stress, conduction losses of transformer and switching devices are increased. To alleviate this problem, this paper provides a circulating current free type high frequency soft switching phase-shifted full bridge (FB) dc/dc converter with the modified energy recovery snubber (ERS) attached at the secondary side of transforemr.

• 대한전자공학회논문지
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• 제25권1호
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• pp.94-100
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• 1988

To improve the switching time of active optical bistable devices, we propose an active optical bistable device that consists of a diode laser, a transistor, and a photodetector. By implementing the proposed device we realize the optical bistable device with a 5 nanosecond switching time. This is the fastest switching time among the hybrid type optical bistable devices. It is also experimentally demonstrated that the proposed device may be used in an optical disc pick up.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.73-73
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• 2008

• Journal of Electrical Engineering and Technology
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• 제10권5호
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• pp.2031-2039
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• 2015

In the LED lighting industry, the dimming function in the LED lamp is required by demands of many consumers. To drive this LED lighting, various types of power converters have been applied. Among them, an LLC resonant converter could be applied for high power LED lighting because of its high efficiency and high power density, etc. The function of power factor correction (PFC) might be added to it. In this paper, a dimmable single-stage asymmetrical LLC resonant converter is proposed. The proposed converter performs both input-current harmonics reduction and PFC using the discontinuous conduction mode (DCM). Also, the lower voltage stress across switching devices as well as the zero voltage switching (ZVS) in switching devices is realized by the proposed topology. It can reduce cost and has high efficiency of the driver. In addition, the regulation of the output power by variable switching frequency can vary the brightness of a light. In the proposed converter, one of the attractive advantages doesn’t need any extra control circuits for the dimming function. To verify the performance of the proposed converter, simulation and experimental results from a 300W prototype are provided.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.

• 전력전자학회논문지
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• 제19권2호
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• pp.173-183
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• 2014

In this paper, an analysis of power losses for the three-level T-type and neutral-point clamped (NPC) PWM inverters is presented, in which the conduction and switching losses of semiconductor devices of the inverters are taken into account. In the inverter operation, the conduction loss depends on the modulation index (MI) and power factor (PF), whereas the switching loss depends on the switching frequency. Power losses for the T-type and NPC inverters are analyzed and calculated at the different operating points of MI, PF and the switching frequency, in which the four different models of semiconductor devices are adopted. In the case of lower MI, the NPC-type is more efficient than the T-type, and vice versa. The validity of the power loss analysis has been verified by the simulation results.

• 전기학회논문지P
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• 제53권1호
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• pp.14-21
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• 2004

Most adjustable-speed drives (ASDs) designed to operate low voltage induction motors incorporate voltage-source inverters (VSIs), which create motor voltages at high switching frequencies. The motor leads used to connect an ASD to a motor can behave like transmission lines for voltage pulses, which can be reflected at the motor terminals. The resulting oscillatory transient, known as the long-lead effect, can stress and consequently degrade the stator insulation system of a motor. This paper describes the results of tests to 1) determine the correlation between peak motor voltage and the length of motor leads and 2) determine the correlation between peak motor voltage and the switching frequency of the ASD Insulation failures like this usually are caused by voltage surges. Voltage surges are often the result of switching power circuits, lightning strikes, capacitor discharges and solid-state power devices.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.63-69
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• 1998

A new current controlled PWM technique with NPC structure is proposed in this paper. A current controlled PWM technique with neutral-point-clamped pulse-width modulation inverter composed of main switching devices which operates as switch for PWM and auxiliary switching devices to clamp the output terminal potential to the neutral point potential is described. The proposed current controller has a first and second current band. The switching pattern will be made by the first current band. According to the second current band, the output state of the switching pattern is changed into positive and negative state. This inverter output contains less harmonic content and lower switching frequency than that of conventional current controlled PWM technique at the same current limit. Two inverters are compared analytically and the performance is investigated by the computer simulation.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권12호
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• pp.682-690
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• 2002

The conventional three-level high frequency phase-shifted dc/dc converter has a disadvantage that a circulating current flows through transformer and switching devices during the freewheeling interval.. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved three-level Zero Voltage and Zero Current Switching (ZVZCS) dc/dc converter using a tapped inductor, a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 7㎾, 30KHz experimental prototype.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.49-54
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• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.