• Laser Solutions
• /
• v.12 no.3
• /
• pp.1-6
• /
• 2009

This paper describes the method for the fabrication of micro dot array on a plastic mold steel using DPSS (diode pumped solid-states) UV laser and wet etching process. We suggest the process of the ablation of a photoresist (PR) coated on plastic mold steel and wet etching process using solutions of various concentrations of $FeCl_3$, $HNO_3$ in water as etchant. This method makes it possible to fabricate metallic roller mold because the microstructures are directly fabricated on the metal surface. In the range of operating conditions studied, $17\;{\mu}J$ laser pulse energy and 50 ms laser exposure time, an etchant containing 40wt% $FeCl_3$, 5wt% $HNO_3$ and etch time for 45 s gave the $10\;{\mu}m$ of micro dot pattern on plastic mold steel.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.865-868
• /
• 2001

We designed and fabricated a planner-type thermoelastic microactuator with a latch-up operation for optical switching. Latch-up actuation is prerequisite to implement an optical switch with low power consumption and high reliability. The proposed microactuator consists of four cantilever-shaped thermal actuators, four displacement linkages, two shallow arch-shaped leaf springs, a mobile shuttle mass with a micromirror, and four elastic boundaries. The structural layer of the planar microactuator is phosphorous-doped 12$\mu\textrm{m}$-thick polysilicon, and the sacrificial layer is LTO(Low Temperature Oxide) of 3$\mu\textrm{m}$thickness. The displacement of actuator is as large as 3$\mu\textrm{m}$when the length of actuation bar is 100$\mu\textrm{m}$in length at 5V input voltage. The proposed microactuators have advantages of easy assembly with other optical component by way of fiber alignment in the substrate plane, and its fabrication process features simplicity while retaining batch-fabrication economy.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1899-1901
• /
• 2001

본 논문에서는 3차원 feed horn 안테나를 볼로미터에 결합함으로써 감지도(Detectivity)를 향상시킨 비가시광 영상 감지 소자를 제안하였다. Feed horn 안테나의 우수한 지향성(Directivity)를 통해서 주위의 잡음 성분을 제거함으로써 감지도의 향상을 확인할 수 있었다. 안테나와 볼로미터와의 결합 손실을 줄이기 위해서 볼로미터의 흡수층의 모양을 원형의 형태로 하였으며 크기도 안테나 폭과 일치를 시켰다. 또한 열적 고립 구조를 만들기 위한 지지 다리의 모양도 원형의 형태로 하여서 전체 길이를 증가 시켰으며 이로 인해 열전도도(Thermal conductance)를 $4.65{\times}10^{-8}$[W/K]까지 낮출 수 있었 다. 설계된 소자의 감지도는 $2.37{\times}10^{9}$[$cm\sqrt{Hz}/W$]을 나타내었으며 안테나 결합을 통한 감지도의 향상을 확인 할 수 있었다. 볼로미터의 제작은 MEMS 기술을 이용한 표면미세가공(Surface micromachining)법으로 열적 고립 구조체를 제작할 수 있으며 3차원 feed horn안테나는 SU-8이라는 음성 감광제를 경사회전노광시켜서 제작할 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.4
• /
• pp.314-317
• /
• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The $1.2{\mu}m$ and $0.4{\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 On long cantilever resonators were -9.79, -7.72 and -8.0 ppm/$^{\circ}C$. On the other hand, TCF of 60, 80 and $100{\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 ppm/$^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.252-252
• /
• 2008

The microhotplates consisting of a Pt-ased heating element on AlN/poly 3C-SiC layers were fabricated. The microhotplate has a $600{\mu}m{\times}600{\mu}m$ square shaped membrane which made of $1{\mu}m$ thick ploycrystalline 3C-SiC suspended by four legs. 3C-SiC is known for excellent chemical durability, mechanical strength and sustaining of high temperature. The membrane is fabricated by surface micromachining using oxidized Si sacrificial layer. The Pt thin film is used for heating material and resist temperature sensor. The fabrication methodology allows intergration of an array of heating material and resist temperature detector. For reasons of a short response time and a high sensitivity a uniform temperature profile is desired. The dissipation of microhotplate was examined by a IR thermoviewer and the power consumption was measured. Measured and simulated results are compared and analyzed. Thermal characterization of the microhotplates shows that significant reduction in power consumption was achieved using suspended structure.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1996.04a
• /
• pp.146-150
• /
• 1996

A thermal micro actualtor has been fabricated using surface micromachining techniques. It consists of doped ploysilicon as a moving part and TEOS(Tetra Ethyl Ortho Silicate) as a sacrificial layer. The polysilicon was annealed for the reduction of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE(vapor phase etching)process was also used as an effective release method for the elimination of sacrificaial layer. With noliquid involved during any of the steps for relasing, unlike other reported relase techniques, the HF VPE pocess has produced polysilicon microstructures with virtually no process-induced stiction problem. The actuation is incured by the thermal expasion due to current flow in active polysilicon cantilever, which motion is amplified bylever mechanism. The thickness of pllysilicon is 2 .mu. m and the length of active and passive polysilicon cantilever are 500 .mu. m, respectively. The moving distance of polysilicon actuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10 V and 50Hz square wave. These micro actuator technology can be utilized for the fabrication of MEMS (microlectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.3
• /
• pp.424-433
• /
• 2001

We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.04a
• /
• pp.110-110
• /
• 2000

Cantilever-shaped lateral field emitters were fabricated and their electrical characteristics were tested. As shown in Fig.1, poly-silicon cantilevers were fabricated by the surface micromachining and they were used to the vacuum magnetic field sensors. The tunneling devices were vacuum sealed with the tubeless packaging method, as shown in Fig.2 and Fig.3. The soda-lime glasses were used for better encapsulation, so the sputtered silicon and the glass layers on the soda-lime glasses were bonded together at 1x10$^{-6}$ Torr. The getter was activated after the vacuum sealing fur the stable emissions. The devices were tested outside of the vacuum chamber. Through vacuum packaging, the tunneling sensors can be utilized. Fig.4 shows that the sensor operates with the switching of the magnetic field. When the magnetic field was applied to the device, the anode currents were varied by the Lorentz force. The difference of anode currents can be varied with the strength of the applied magnetic field.

• Journal of information and communication convergence engineering
• /
• v.14 no.4
• /
• pp.246-251
• /
• 2016

In this study, we developed a reduced 94 GHz hybrid ring coupler on a GaAs substrate in order to demonstrate the possibility of the integration of various passive components and MMICs in the millimeter-wave range. To reduce the size of the hybrid ring coupler, we used multiple open stubs on the inside of the ring structure. The chip size of the reduced hybrid ring coupler with multiple open stubs was decreased by 62% compared with the area of the hybrid ring coupler without open stubs. Performance in terms of the loss, isolation, and phase difference characteristics exhibited no significant change after the use of the multiple open stubs on the inside of the ring structure. The reduced hybrid ring coupler showed excellent coupling loss of $3.87{\pm}0.33dB$ and transmission loss of $3.77{\pm}0.72dB$ in the measured frequency range of 90-100 GHz. The isolation and reflection were -48 dB and -32 dB at 94 GHz, respectively. The phase differences between two output ports were $180^{\circ}{\pm}1^{\circ}$ at 94 GHz.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.2026-2028
• /
• 2002

본 논문에서는 실리콘 기판상의 전송선로 특성을 개선하기 위하여 표면 마이크로머시닝 기술을 이용하여 $10{\mu}m$ 두께의 다공질 실리콘 산화막으로 제조된 기판 위에 에어브리지를 가진 CPW 전송선로와 phase shifter를 제작하였다. 간격이 $30{\mu}m$, 신호선이 $80{\mu}m$인 CPW 에어브리지 전송선의 삽입손실은 4 GHz에서 -0.25 dB이며, 반사손실은 -28.9 dB를 나타내었다. CPW phase shifter의 크기는 S-W-$S_g$ = 100-30-400 ${\mu}m$로 설계되었다. "ㄷ" 모양을 가진 에어브리지의 폭은 $100{\mu}m$. 길이는 400-460-400 ${\mu}m$이다. 낮은 손실을 얻기 위한 Step된 에어브리지를 가진 phase shifter 구조가 step이 없는 에어브리지를 가진 구조보다 삽입손실이 보다 더 향상되었다. 제작된 CPW phase shifter의 위상특성은 28 GHz의 넓은 주파수 범위에서 $180^{\circ}E 의 천이를 타나내었다. 이상과 같은 결과로부터 두꺼운 다공질 실리콘은 고 저항 실리콘 집적회로 공정에서 고성능 저가의 마이크로파 및 밀리미터파 회로 응용에 충분히 활용 될 수 있으리라 기대된다.