• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Journal of the korean academy of Pediatric Dentistry
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• v.25 no.4
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• pp.761-771
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• 1998

In this study, attempt has been made to evaluate the effect of $CO_2$ laser irradiation on enamel surface structure and the bond strength of sealant material. Conventional acid etching was used as a control technic for comparison. The results obtained from this experiment were as follows; 1. The highest mean shear bond strength value was observed in samples of Group I (acid-etching) with the statistical significance(p<.05) between all the other groups. 2. The shear bond strength in Group IV was the lowest among laser etching groups. but there were no significant difference between them(p>.05). 3. Scanning electron microscopic observation showed that the rough and irregular surface was created by $CO_2$ laser treatment with the formation of numerous pores, micro-cracks, and small bubble-like inclusion. Increasing the energy density induced localized surface melt with a thin smooth glaze-like appearance. 4. In acid-etched control specimen cohesive failure predominated, whereas adhesive failure was the main mode in laser-treated group. Based upon the above-mentioned results, it can be assumed that the $CO_2$ laser is not an adequate substitute for the acid-etch technique in enamel preconditioning. More studies are required to explore the effective condition of laser irradiation which could attain the better bond strength of restorative materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Tribology and Lubricants
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• v.37 no.5
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• pp.189-194
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• 2021

A straightforward, yet effective surface modification method of stainless steel mesh and its interesting anti-wetting characteristics are reported in this study. The stainless steel mesh is electrochemically etched, and the specimen has both micro and nano-scale structures on its surface. This process transforms the two types of mesh specimens known as the regular and dense specimens into hydrophobic specimens without applying any hydrophobic chemical coating process. The fundamental wettability of the modified mesh is analyzed through a dedicatedly designed experiment to investigate the waterproof characteristics, for instance, the penetration threshold. The waterproof characteristics are evaluated in a manner that the modified mesh resists as high as approximately 2.7 times the pressure compared with the bare mesh, i.e., the non-modified mesh. The results show that the penetration threshold depends primarily on the advancing contact angles, and the penetration stop behaviors are affected by the contact angle hysteresis on the surfaces. The findings further confirm that the inexpensive waterproof meshes created using the proposed straightforward electrochemical etching process are effective and can be adapted along with appropriate designs for various practical applications, such as underwater devices, passive valves, and transducers. In general, , additional chemical coatings are applied using hydrophobic materials on the surfaces for the applications that require water-repelling capabilities. Although these chemical coatings can often cause aging, the process proposed in this study is not only cost-effective, but also durable implying that it does not lose its waterproof properties over time.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.306-313
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• 2012

In order to enhance the isolation level between two dual-band E-slot microstrip patch antennas, EBG structure which operates in UMTS Tx(1.92~1.98 GHz) and Rx(2.11~2.17 GHz) band is proposed. The proposed EBG structure made with a periodic array of two different size EBG unit cells which has a modified mushroom-type for isolation improvement between two antennas. They do not share a common ground plane of the microstrip patch antenna. Overall size of the fabricated antenna is $210.5mm{\times}117mm$. The two different EBG unit cell sizes are $15.6mm{\times}4mm$ and $17.4mm{\times}4mm$, respectively. It was etched on the FR-4 substrate(thickness=3.93 mm, ${\varepsilon}_r$=4.6). The experiment results show that the isolation level between antennas in Tx/Rx band were improved by about 9 dB and 12 dB, respectively, through the use of the proposed EBG structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1005-1016
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• 2002

In this paper, a 2 GHz tapered shape of multiport power divider/combiner modified from the model published by [10] and adopted PBG(Photonic Band Gap) structure is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that tile modified structure and PBG of power divider/combiner have improved return loss more than 20 dB and another 18 dB. respectively, at 2 GHz.

• Journal of Periodontal and Implant Science
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• v.30 no.3
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• pp.491-504
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• 2000

In clinical therapy, the current goal of dental implants is to enhance quantity and quality of osseointegration. Surface roughness and oxide structure are considered to influence the behavior of adherent cells. The purpose of this study is to evaluate the effect of different surface treatment on cellular response. The attachment and proliferation of osteoblast-like cell on sandblasted, sandblasted and etched, thermal oxidated surfaces have been compared. Sandblasting was done with $Al_2O_3$ particles(grain size of $50{\mu}m$), etching was processed with $NH_4OH$ : $H_2O_2$ : $H_2O(1:1:5)$ at $90^{\circ}C$ for 1 minute. Thermal oxidation was followed sandblasting and etching at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$ for 2 hours. Measurement of surface roughness after the different treatment did not show any differences of Ra value between terated surfaces. Cell attachment and proliferation were increased during experiment period, but no difference was observed. SEM evaluation revealed a similar pattern of osteoblast-like cells, well attached with dendritic extension and producing numerous matrix vesicles on cell surface. The results of this study showed that oxide layer alteration by thermal oxidation did not affect the attachment and proliferation of osteoblast-like cells. This suggests the possibility that the cellular responses are further influenced by surface roughness than titaniun oxide structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Journal of Powder Materials
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• v.23 no.3
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• pp.207-212
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• 2016

In this study, Fe-Cu-Ni-Mo-C low alloy steel powder is consolidated by spark plasma sintering (SPS) process. The internal structure and the surface fracture behavior are studied using field-emission scanning electron microscopy and optical microscopy techniques. The bulk samples are polished and etched in order to observe the internal structure. The sample sintered at $900^{\circ}C$ with holding time of 10 minutes achieves nearly full density of 98.9% while the density of the as-received conventionally sintered product is 90.3%. The fracture microstructures indicate that the sample prepared at $900^{\circ}C$ by the SPS process is hard to break out because of the presence of both grain boundaries and internal particle fractures. Moreover, the lamellar pearlite structure is also observed in this sample. The samples sintered at 1000 and $1100^{\circ}C$ exhibit a large number of tiny particles and pores due to the melting of Cu and aggregation of the alloy elements during the SPS process. The highest hardness value of 296.52 HV is observed for the sample sintered at $900^{\circ}C$ with holding time of 10 minutes.

• Journal of Advanced Navigation Technology
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• v.6 no.4
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• pp.279-290
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• 2002

In this paper, tapered shape of multiport power divider/combiner modified for 2 GHz range from the model published by [10] is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that the modified structure of power divider/combiner have improved return loss more than 20 dB and another 18 dB, respectively, at 2 GHz.