• Economic and Environmental Geology
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• v.43 no.6
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• pp.615-623
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• 2010

Seismic refraction survey is a geophysical method that delineates subsurface velocity structure using direct wave and critically refracted wave. The generalized reciprocal method(GRM) is an inversion technique which uses travel-time data from several forward and reverse shots and which can provide the geometry of irregular inclined refractors and structures underlain by hidden layer such as low velocity zone and thin layer. In this study, a simple Excel-GRM routine was tested for fast mapping of the interface between weathering layer and bedrock during the survey, with employing a pair of forward and reverse shots. This routine was proved to control the maximum dip of approximately $30^{\circ}C$ and maximum velocity contrast of 0.6, based on the panel tests in terms of dipping angle and velocity contrast for the two-layer inclined models. In contrast with conventional operation of five to seven shots with sufficient offset distance and indoor data analysis thereafter, this routine was performed in the field shortly after data acquisition. Depth to the bedrock provided by Excel-GRM, during the field survey for Cheongju granite area, correlates well with the elevation of the surface of soft rock from the drill core and SPS logging data. This cost-effective routine developed for quickly delineating the bedrock surface in the field survey will be readily applicable to mapping of weathering zone in narrow zone with small variation of elevation of bedrock.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.05a
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• pp.103-107
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• 2005

In order to investigate the velocity structure of the southern part of the Korean peninsula, exploded seismic signals were recorded for 120 s along a 294-km WNW-ESE line and 150 s along a 335-km NNW-SSE line in 2002 and 2004, respectively. Velocity tomograms were derived from inverting first arrival times. One-dimensional velocity models derived by joint analyses of teleseismic receiver functions and surface wave dispersion at several stations near the profiles were uesd to build initial models. The raypaths indicate several midcrust interfaces including ones at approximate depths of 2.0 and 14.9 km with refraction velocities of approximately 6.0 and 7.1 km/s, respectively. The deepest significant interface varies in depth from 30.8 km to 36.1 km. The critically refracting velocity varies from 7.8 to 8.1 km/s along this interface which may correspond to the Moho discontinuity. The velocity tomograms show (1) existence of a low-velocity zone centered at 6-7 km depth under the Okchon fold belt, (2) extension of the Yeongdon fault down to greater than 10 km, and (3) existence of high-velocity materials under the Gyeongsan basin whose thickness is less than 4.2 km.

• 한국지구물리탐사학회:학술대회논문집
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• 2000.09a
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• pp.132-146
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• 2000

Seismic refraction survey was performed for 10 lines along NE-SW and NW-SE directions above Nampoong gallery at Makyo-ri, Dogye, Samcheok, Kangwon-do. 48 geophones were laid in line with the interval of 1m, and a 5Kg hammer was used as a source at 5 points for each line. Data processing was done using reciprocal time method, GRM, and traveltime tomography which utilizes wavefront expansion method for forward process and STRT for inversion. The result shows that the first layer has its lower boundary between 3.49m and 8.88m. The P-wave velocity of the first and the second layer were estimated as 270${\~}$360m/s and 1550${\~}$1940m/s respectively. When the boundary of the first and second layer is smooth enough and the velocity difference is large enough, GRM has little advantage over reciprocal time method. The result of reciprocal method and traveltime tomography shows consistency. The northeast part of the boundary has syncline structure, which is similar to the topography above. This implies that the collapse of the cavities of Nampoong gallery result in the subsidence of the ground surface. The subsidence is in progress across the Youngdong railroad, therefore a proper reinforcement work is required.

• Journal of the Korean Geophysical Society
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• v.8 no.1
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• pp.45-48
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• 2005

In order to investigate the velocity structure of the southern part of the Korean peninsula, exploded seismic signals were recorded for 120 s along a 294-km WNW-ESE line and 150 s along a 335-km NNW-SSE line in 2002 and 2004, respectively. Velocity tomograms were derived from inverting first arrival times. One-dimensional velocity models derived by joint analyses of teleseismic receiver functions and surface wave dispersion at several stations near the profiles were uesd to build initial models. The raypaths indicate several midcrust interfaces including ones at approximate depths of 2.0 and 14.9 km with refraction velocities of approximately 6.0 and 7.1 km/s, respectively. The deepest significant interface varies in depth from 30.8 km to 36.1 km. The critically refracting velocity varies from 7.8 to 8.1 km/s along this interface which may correspond to the Moho discontinuity. The velocity tomograms show (1) existence of a low-velocity zone centered at 6-7 km depth under the Okchon fold belt, (2) extension of the Yeongdon fault down to greater than 10 km, and (3) existence of high-velocity materials under the Gyeongsan basin whose thickness is less than 4.2 km.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).