• 한국자기학회지
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• 제10권4호
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• pp.165-170
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• 2000

Fe-Hf-N 연자성 박막의 물리적, 자기적 특성에 미치는 열처리 영향에 대하여 고찰하였다. Fe-Hf-N 연자성 박막을 질소분위기에서 열처리 할 경우 표면에 Fe$_2$O$_3$-Fe$_3$O$_4$으로 구성된 산화층이 생성되었고, 이 산화층 아래 Fe-Hf-O-N층이 생성되었다. 열처리 온도의 증가에 따라 Fe$_2$O$_3$-Fe$_3$O$_4$ 산화층과 Fe-Hf-O-N 층의 두께가 증가하였고, Fe$_2$O$_3$-Fe$_3$O$_4$산화층을 제외한 박막의 두께는 열처리전과 같았다. 열처리한 박막에서 표면에 생성된 Fe$_2$O$_3$-Fe$_3$O$_4$산화층의 두께를 제외하고 계산한 박막의 연자기 특성은 열처리 전의 연자기 특성에 비해 약간 떨어지는 것으로 나타났다. 그러므로, Fe-Hf-O-N층은 박막 전체의 연자기 특성을 크게 떨어뜨리지 않으며, 열처리 후 박막 전체의 연자기 특성은 Fe-Hf-O-N과 Fe-Hf-N의 다층막의 연자기 특성을 나타내는 것으로 생각된다.

• 한국세라믹학회지
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• 제52권4호
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• Corrosion Science and Technology
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• 제23권3호
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• pp.221-227
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• 2024

During hot stamping of hot-dip zinc-coated steel sheets such as hot-dip galvanized steel sheets and hot-dip galvannealed steel sheets, an oxide mainly composed of ZnO is formed on the sheet surface. However, excessive formation of ZnO can lead to a decrease in the amount of metal Zn in the coating layer, decreasing the corrosion resistance of hot-stamped members. Therefore, it is important to suppress excessive formation of ZnO. While the formation of Al oxides and Mn oxides along with ZnO layer during the hot stamping of hot-dip zinc-coated steel sheets can affect ZnO formation, crystal structures of such oxides have not been elucidated clearly. Thus, this study aimed to analyze structures of oxides formed during hot stamping of hot-dip galvannealed steel sheets using transmission electron microscopy. Results indicated the formation of an oxide layer comprising ZnAl₂O₄ at the interface between ZnO and the coating layer with Mn₃O₄ at the outermost of an oxide layer.

• 한국표면공학회지
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• 제30권5호
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• pp.320-332
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• 1997

The development of colored surface on zinc coating by the oxidation of a melten alloy of zinc with a minor amount of oxygen-avid additive such as tianium has been studied. Using a galvanizing Zinc alloy containing 0.1 to 0.3wt%Ti, gold, purple or blue color was developed clearly and stably, depending upon the extent of oxidation, by air cooling after hot dipping in a bath at temperature of $550^{\circ}C$ to $600^{\circ}C$. The source of the color is light interference with surface oxide layer. THe final color depends on the thickness of the color depends on the thickness of $TiO_2$, played So compositing, temperature and time at elevated temperature after are all controlling variables. Since oxidation film such as $TiO_2$ played role of passivation film, the corrosion resistance in a colored galvanized steel sheet. It is also thought that surface oxide layer of $TiO_2$ inhibited dissolution of the coating layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• 한국표면공학회지
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• 제37권4호
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• pp.196-199
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• 2004

Seedlayers with low surface energy which increases the density of nucleation sites in the initial growth region of the recording layer deposited on them was studied to reduce grain size in recording layer. The seedlayer with low surface energy was so effective to attain finer grain in magnetic upper-layers. The Ni-Fe-O intermediate layer with low surface energy was found to be effective in reduction of grain size as well as magnetic cluster size of Co-Cr-Ta-Pt recording layer. Furthermore, the reduction of grain size in Co-Cr-Ta-Pt recording layer on Ni-Fe-O intermediate layer with low surface energy led to decrease the noise level in the high recording density region.

• 한국세라믹학회지
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• 제37권3호
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• 한국생산제조학회지
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• 제22권3_1spc호
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• pp.544-550
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• 2013

A grooved surface with anisotropic wettability was fabricated on a silicon substrate using photolithography, reactive ion etching, and a KOH etching process. The contact angles (CAs) of water droplets were measured and compared with the theoretical values in the Cassie state and Wenzel state. The experimental results showed that the contact area between a water droplet and a solid surface was important to determine the wettability of the water. The specimens with native oxide layers presented CAs ranging from $71.6^{\circ}$ to $86.4^{\circ}$. The droplets on the specimens with a native oxide layer could be in the Cassie state because they had relatively smooth surfaces. However, the CAs of the specimens with thick oxide layers ranged from $33.4^{\circ}$ to $59.1^{\circ}$. This indicated that the surface roughness for a specimen with a relatively thick oxide layer was higher, and the water droplet was in the Wenzel state. From the CA measurement results, it was observed that the wetting on the grooved surface was anisotropic for all of the specimens.

• 한국표면공학회지
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• 제54권2호
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• pp.62-70
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• 2021

Al2024 aluminum alloy specimens were exposed to atmospheric conditions for maximum 24 months and analyzed by electron microscopes to characterize their corrosion behavior and oxide film characteristics. As the exposure time increased from 12 months to 24 months, the number of pitting sites per 1 mm² increased from ~100 to ~200. The uniform oxidation (or non-pitting) region of the 12-month exposure specimen showed 30~120 nm thick oxide layer, whereas the 24-month exposure specimen showed 170~200 nm thick oxide with the local oxygen penetration region up to 1 ㎛ deep. There was no local corrosion area observed in the 12-month exposure specimen except pitting. However, in the 24-month exposure specimen, local oxygen penetration region was observed beneath the uniform oxide layer and near the pitting cavity. Al2024 showed two times thicker uniform oxide layer but much shallower local oxygen penetration region than Al1050, which appears to be related to low Si concentration. Further research is needed on the effects of Mg segregation near the tip of the oxygen penetration region.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1621-1623
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• 1997

The breakdown voltage of SOI RESURF (REduce SURface Field) diode using a SIPOS (Semi Insulating POlycrystalline Silicon) layer is verified in terms of n-drift layer length and surface oxide thickness by device simulator MEDICI, and compared with conventional SOI RESURF diode. Increasing the n-drift layer length, the breakdown voltage of SOI RESURF diode using the SIPOS layer have increased and saturated at $8{\mu}m$. And it has decreased with increasing the surface oxide thickness.