• The Journal of Korean Academy of Prosthodontics
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• v.42 no.2
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• pp.192-209
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• 2004

Purpose : The purpose of this study was to evaluate the machining accuracy and consistency of implant/abutment/screw combination or internal connection type. Material and methods: In this study, each two randomly selected internal implant fixtures from ITI, 3i, Avana, Bicon, Friadent, Astra, and Paragon system were used. Each abutment was connected to the implant with 32Ncm torque value using a digital torque controller or tapping. All samples were cross-sectioned with grinder-polisher unit (Omnilap 2000 SBT Inc) after embeded in liquid unsaturated polyester (Epovia, Cray Valley Inc). Then optical microscopic and scanning electron microscopic(SEM) evaluations of the implant-abutment interfaces were conducted to assess quality of fit between the mating components. Results : 1) Generally, the geometry of the internal connection system provided for a precision fit of the implant/abutment into interface. 2) The most precision fit of the implant/abutment interface was provided in the case of Bicon System which has not screw. 3) The fit of the implant/abutment interface was usually good in the case of ITI, 3I and Avana system and the amount of fit of the implant/abutment interface was similar to each other. 4) The fit of the implant/abutment interface was usually good in the case of Friadent, Astra and Paragon system. The case of Astra system with the inclined contacting surface had the most Intimate contact among them. 5) Amount of intimate contact in the abutment screw thread to the mating fixture was larger in assembly with two-piece type which is separated screw from abutment such as Friadent, Astra and Paragon system than in that with one-piece type which is not seperated screw from abutment such as ITI, 3I and Avana system. 6) Amount of contact in the screw and the screw seat of abutment was larger in assembly of Friadent system than in asembly of Astra system of Paragon system. Conclusion: Although a little variation in machining accuracy and consistency was noted in the samples, important features of all internal connection systems were the deep, internal implant-abutment connections which provides intimate contact with the implant walls to resist micro-movement, resulting in a strong stable interface. From the results of this study, further research of the stress distribution according to the design of internal connection system will be required.

• Transactions of Materials Processing
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• v.29 no.2
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• pp.103-112
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• 2020

This study explores the effects of different pre-machining conditions on the deposition characteristics and mechanical properties of austenitic stainless steel samples repaired using direct energy deposition (DED). In the DED repair process, defects such as pores and cracks can occur at the interface between the substrate and deposited material. In this study, we varied the shape of the pre-machined zone for repair in order to prevent cracks from occurring at the slope surface. After repairs by the DED process, macro-scale cracks were observed in samples that had been pre-machined with elliptic and trapezoidal grooves. In addition, it was not possible to completely prevent micro-crack generation on the sloped interfaces, even in the capsule-type grooved sample. From observation of the fracture surfaces, it was found that the cracks around the inclined interface were due to a lack of fusion between the substrate and the powder material, which led to low tensile properties. The specimen with the capsule-type groove provided the highest tensile strength and elongation (respective of 46% and 571% compared to the trapezoidal grooved specimen). However, the tensile properties were degraded compared to the non-repaired specimen (as-hot rolled material). The fracture characteristics of the repaired specimens were determined by the cracks at the sloped interfaces. These cracks grew and coalesced with each other to form macro-cracks, they then coalesced with other cracks and propagated to the substrate, causing final fracture.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.