• 제목/요약/키워드: Surface layer current

검색결과 969건 처리시간 0.029초

Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs

  • Kim, Do-Kywn;Sindhuri, V.;Kim, Dong-Seok;Jo, Young-Woo;Kang, Hee-Sung;Jang, Young-In;Kang, In Man;Bae, Youngho;Hahm, Sung-Ho;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.601-608
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    • 2014
  • In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

A three dimensional numerical model of tide and tidal current in the bay of Cheonsu in Korea

  • Moon Seup Shin;Tet
    • Proceedings of the Korea Water Resources Association Conference
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    • 한국수자원학회 1998년도 학술발표회 논문집
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    • pp.632-637
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    • 1998
  • The purpose of this study of this study is to find tide and tidal current variation by three dimensional numerical model of tide and tidal current in the bay of Cheonsu in Korea. On the basis of the observed data on water temperature and salinity data and wind data of summer(July) in the bay of Cheonsu in Korea, water circulation in the bay of Cheonsu is investigated with use of a robust diagnostic numerical model, including calculated co-range and co-tidal charts of M2 tide are similar to the observed ones. The residual flow Pattern at the surface layer during summer formed clockwise circulation in the front coastal the dike of the Sosam A zone(Ganwor island) and Taeju island. The residual flow pattern at the 15m layer during formed clockwise circulation in the front Taeju island. The residual flow Pattern at the surface layer formed anti-clockwise circulation in the upper Sangmok and Naepasu island.

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Emission Characteristics of Multi-Tandem OLED using MoOx with CGL (CGL 층으로 MoOx를 사용한 다중 적층구조 OLED의 발광 특성)

  • Kim, Ji-Hyun;Ju, Sung-Hoo
    • Journal of the Korean institute of surface engineering
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    • 제48권3호
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    • pp.105-109
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    • 2015
  • We studied emission characteristics of blue fluorescent multi-tandem OLEDs using $Al/MoO_x$ as charge generation layer(CGL). Threshold voltage for 2, 3, 4, and 5 units tandem OLEDs was 8, 11, 14 and 18 V, respectively. The threshold voltage in multi-tandem OLEDs was lower than multiple of 4 V for the single OLED. Maximum current efficiency and maximum quantum efficiency of single OLED were 7.6 cd/A and 5.5%. Maximum current efficiency for 2, 3, 4, and 5 units tandem OLEDs was 22.6, 31.4, 41.2, and 46.6 cd/A, respectively. Maximum quantum efficiency for 2, 3, 4, and 5 units tandem OLEDs was 11.8, 15.8, 21.8, and 25.6%, respectively. The maximum current efficiency and maximum quantum efficiency in multi-tandem OLEDs were higher than multiple of those for the single OLED. The intensity for 508 nm peak was changed and the peak wavelength was red shift by increase of tandem unit in electroluminescent emission spectra. These phenomena can be caused by micro-cavity effect with increasing of organic layer thickness.

Organic thin film transistors with an organic/high-k inorganic bilayer gate dielectric layer

  • Seol, Y.G.;Lee, N.E.;Lee, S.S.;Ahn, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1185-1188
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    • 2006
  • Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

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Effects of surface-roughness and -oxidation of REBCO conductor on turn-to-turn contact resistance

  • Y.S., Chae;H.M., Kim;Y.S., Yoon;T.W., Kim;J.H., Kim;S.H., Lee
    • Progress in Superconductivity and Cryogenics
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    • 제24권4호
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    • pp.40-45
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    • 2022
  • The electrical/thermal stabilities and magnetic field controllability of a no-insulation (NI) high-temperature superconducting magnet are characterized by contact resistance between turn-to-turn layers, and the contact resistance characteristics are determined by properties of conductor surface and winding tension. In order to accurately predict the electromagnetic characteristics of the NI coil in a design stage, it is necessary to control the contact resistance characteristics within the design target parameters. In this paper, the contact resistance and critical current characteristics of a rare-earth barium copper oxide (REBCO) conductor were measured to analyze the effects of surface treatment conditions (roughness and oxidation level) of the copper stabilizer layer in REBCO conductor. The test samples with different surface roughness and oxidation levels were fabricated and conductor surface analysis was performed using scanning electron microscope, alpha step surface profiler and energy dispersive X-ray spectroscopy. Moreover, the contact resistance and critical current characteristics of the samples were measured using the four-terminal method in a liquid nitrogen impregnated cooling environment. Compared with as-received REBCO conductor sample, the contact resistance values of the REBCO conductors, which were post-treated by the scratch and oxidation of the surface of the copper stabilizer layer, tended to increase, and the critical current values were decreased under certain roughness and oxidation conditions.

Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제8권4호
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    • pp.174-177
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    • 2007
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

Investigation of Firing Conditions for Optimizing Aluminum-Doped p+-layer of Crystalline Silicon Solar Cells

  • Lee, Sang Hee;Lee, Doo Won;Shin, Eun Gu;Lee, Soo Hong
    • Current Photovoltaic Research
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    • 제4권1호
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    • pp.12-15
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    • 2016
  • Screen printing technique followed by firing has commonly been used as metallization for both laboratory and industrial based solar cells. In the solar cell industry, the firing process is usually conducted in a belt furnace and needs to be optimized for fabricating high efficiency solar cells. The printed-Al layer on the silicon is rapidly heated at over $800^{\circ}C$ which forms a layer of back surface field (BSF) between Si-Al interfaces. The BSF layer forms $p-p^+$ structure on the rear side of cells and lower rear surface recombination velocity (SRV). To have low SRV, deep $p^+$ layer and uniform junction formation are required. In this experiment, firing process was carried out by using conventional tube furnace with $N_2$ gas atmosphere to optimize $V_{oc}$ of laboratory cells. To measure the thickness of BSF layer, selective etching was conducted by using a solution composed of hydrogen fluoride, nitric acid and acetic acid. The $V_{oc}$ and pseudo efficiency were measured by Suns-$V_{oc}$ to compare cell properties with varied firing condition.

Simulation of Turbid Water According to Watershed Runoff and Withdrawal Type in a Constructing Reservoir (건설 예정인 댐에서 유역유출과 취수형태에 따른 탁수의 거동 예측)

  • Park, Jae-Chung;Choi, Jae-Hun;Song, Young-Il;Yu, Kyung-Mi;Kang, Bo-Seung;Song, Sang-Jin
    • Journal of Environmental Impact Assessment
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    • 제19권3호
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    • pp.247-257
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    • 2010
  • Watershed runoff and turbid water dynamics were simulated in the Youngju Dam, being constructed. The runoff flow and suspended solids were simulated and then thermal stratification and turbid water current in the reservoir were predicted by HSPF and CE-QUAL-W2 model, respectively. Considering selective withdrawal, we hypothesized 3 withdrawal types from the dam, i.e. surface layer, middle layer and the lowest layer. The maximum concentration of SS was 400mg/L in reservoir and it was decreased by the withdrawal. The inflowed turbid water fell to 30 NTU after 12 days regardless of the withdrawal types, but the surface layer withdrawal was a better type at turbid water discharge than the others. In current environmental impact assessment(EIA), we concluded that runoff and reservoir water quality predicted by HSPF and CE-QUAL-W2 was desirable, and appropriate parameters were selected by continous monitoring after EIA.

Hardening Characteristics of Aluminum Alloy Surface by PTA Overlaying with Metal Powders (II) -Hardening charactersteristics and wear resistance of thicker surface alloyed layer- (플라즈마분체 오버레이법에 의한 알루미늄합금 표면의 경화특성에 관한 연구( II ) -후막 표면 합금화층의 경화특성과 내마모성-)

  • ;中田一博;;;松田福久
    • Journal of Welding and Joining
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    • 제12권4호
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    • pp.102-109
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    • 1994
  • The thick and hard alloyed layer was formed on the surface of Aluminum Cast Alloy(AC2B) by PTA overlaying process with Cr, Cu and Ni metal powders under the condition of overlaying current 150A, overlaying speed 150mm/min and different powder feeding rate 5-20g/min. The characteristics of hardening and were resistance of alloyed layer have been investigated in relation to microstructure of alloyed layer. As a result, it was made clear that Cu powder was the most superier one in three metal powders used due to an uniform hardness distribution of Hv 250-350, good wear resistance and freedom from cracking in alloyed layer of which microstructure consisted of hypereutectic. On the contrary, irregular hardness distribution was usually obtained in Cr or Ni alloyed layers of which hardness was increased as Cr or Ni contents and reached to maximum hardness of about Hv 400-850 at about 60wt% Cr or 40wt% Ni in alloyed layer. However the cracking occurred in these alloyed layers with higher hardness than Hv 250-300 at more than 20-25wt% of Cr or Ni contents in alloyed layer. Wear rate of alloyed layer was decreased to 1/10 in Cu alloyed layer and 1/5 or 1/3 in Cr or Ni alloyed layer with same hardness of about Hv 300 in comparison with that of base metal at higher sliding speed.

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Hardening Characteristics of Aluminum Alloy Surface by PTA Overlaying with Metal Powders (I) (플라즈마분체 오버레이법에 의한 알루미늄합금 표면의 경화특성에 관한 연구(I) -후막 표면 합금화층의 형성조건과 그 조직-)

  • ;中田一博;;;松田福久
    • Journal of Welding and Joining
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    • 제12권4호
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    • pp.85-101
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    • 1994
  • Effect of Cr, Cu and Ni metal powders addition on the alloyed layer of aluminum alloy (AC2B) has been investigated with the plasma transferred arc (PTA) overlaying process. The overlaying conditions were 125-200A in plasma arc current, 150mm/min in process speed and 5-20g/min in powder feeding rate. Main results obtained are summarized as follows: 1) It was made clear that formation of thick surface alloyed layer on aluminum alloy is possible by PTA overlaying process. 2) The range of optimum alloying conditions were much wider in case of Cu and Ni powder additions than the case of Cr powder addition judging from the surface appearance and the bead macrostructure. 3) Alloyed layer with Cu showed almost the homogeneous microstructure through the whole layer by eutectic reaction. alloyed layers with Cr and Ni showed needle-like and agglomerated microstructures, the structure of which has compound layer in upper zone of bead by peritectic and eutectic-peritectic reactions, respectively. 4) Microconstituents of the alloyed layer were analyzed as A1+CrA $l_{7}$ eutectics, C $r_{2}$al sub 11/, CrA $l_{4}$, C $r_{4}$A $l_{9}$ and C $r_{5}$A $l_{*}$ 8/ for Cr addition, Al+CuA $l_{2}$(.theta.) eutectics and .theta. for Cu addition, and Al+NiA $l_{3}$ eutectics. NiA $l_{3}$, N $i_{2}$A $l_{3}$ and NiAl for Ni addition. 5) Concerning defect of the alloyed layer, many blow holes were seen in Cr and Ni additions although there was lesser in Cu addition. Residual gas contents in blow hole for Cu and Ni alloyed layer were confirmed as mainly $H_{2}$ and a littie of $N_{2}$ Cracking was observed in compound zone of the alloyed layer in case of Cr and Ni addition but not in Cu alloyed layer.r.r.

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