• Title/Summary/Keyword: Surface grain growth

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High Temperature Grain Growth Behavior of Aerosol Deposited BaTiO3 Film on (100), (110) Oriented SrTiO3 Single Crystal (상온분사분말공정에 의해 SrTiO3 (100), (110) Seed에 코팅된 BaTiO3의 고온 성장 거동 분석)

  • Lim, Ji-Ho;Lee, Seung Hee;Kim, Ki Hyun;Ji, Sung-Yub;Jung, Suengwoon;Park, Chun-kil;Jung, Han-Bo;Jeong, Dae-Yong
    • Korean Journal of Materials Research
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    • v.29 no.11
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    • pp.684-689
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    • 2019
  • Single crystals, which have complexed composition, are fabricated by solid state grain growth. However, it is hard to achieve stable properties in a single crystal due to trapped pores. Aerosol deposition (AD) is suitable for fabrication of single crystals with stable properties because this process can make a high density coating layer. Because of their unique features (nano sized grains, stress inner site), it is hard to fabricate single crystals, and so studies of grain growth behavior of AD film are essential. In this study, a $BaTiO_3$ coating layer with ${\sim}9{\mu}m$ thickness is fabricated using an aerosol deposition method on (100) and (110) cut $SrTiO_3$ single crystal substrates, which are adopted as seeds for grain growth. Each specimen is heat-treated at various conditions (900, 1,100, and $1,300^{\circ}C$ for 5 h). $BaTiO_3$ layer shows different growth behavior and X-ray diffraction depending on cutting direction of $SrTiO_3$ seed. Rectangular pillars at $SrTiO_3$ (100) and laminating thin plates at $SrTiO_3$ (110), respectively, are observed.

The Effect of Heat Treatment on the Thermal Expansion Behavior of Electroformed Nano-crystalline Fe-42 wt%Ni Alloy

  • Lee, Minsu;Han, Yunho;Yim, Tai Hong
    • Journal of the Korean institute of surface engineering
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    • v.47 no.6
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    • pp.293-296
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    • 2014
  • Fe-Ni has been of great interest because it is known as one of low thermal expansion alloys as various application areas. This alloy was fabricated by electroforming process, and effect of heat treatment on thermal expansion and hardness was investigated. Nano-crystalline structure of 13.3 - 63.5 nm in size was observed in the as-deposited alloy. To investigate the effect of heat treatment on grain growth and mechanical/thermal properties, we conducted hardness and coefficient of thermal expansion (CTE). From this, we confirmed these properties were varied by heat treatment. In this nano-crystalline alloy, we could observe abnormal behavior in thermal expansion between $350-400^{\circ}C$. Additionally, an abrupt change in hardness has also been observed. However, once the grains grow up to micro-sized the mechanical and thermal properties mentioned above were stabilized similar to those of bulk alloys due to heat treatment.

The Observation of Intermetallic Compound Microstructure Under Sn Whisker in Lead-free Finish

  • Yu, Chong-Hee
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.2
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    • pp.27-31
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    • 2009
  • Sn whiskers can grow from the pure Sn and high Sn-based finish and cause the electrical shorts and failures. Even with the wealth of information on whiskers, we have neither the clear understanding of whisker growth nor methods for its prevention. In this study, the whisker grain roots which connected with intermetallic layer were analyzed by high-resolution transmission electron microscopy (HR-TEM). In the Sn-Cu plated leadframe (LF) that was stored at ambient condition for 540 days, filament-shaped whiskers were grown on the Sn-plated surface and ${\eta}'-Cu_6Sn_5$ precipitates were widely distributed along the grain boundaries at the Sn matrix. The measured of the lattice fringes at the ${\eta}'-Cu_6Sn_5$ was $4.71{\AA}$ at the coarse grain and $2.91{\AA}$ at the fine grain. The $Cu_3Sn$ which generates the tensile stresses was not observed. The formation of $Cu_6Sn_5$ precipitates and intermetallic layer were strongly related to whisker growth, but, the whisker growth tendency does not closely relate with the geometric morphology of irregularly grown intermetallic compound (lMC).

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Effects of Texture on the Electrochemical Properties of Single Grains in Polycrystalline Zinc

  • Park, Chan-Jin;Lohrengel, Manuel M.;Hamelmann, Tobias;Pllaski, Milan;Kwon, Hyuk-Sang
    • Corrosion Science and Technology
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    • v.3 no.2
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    • pp.54-58
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    • 2004
  • Effects of texture on the electrochemical behaviors of single grains in polycrystalline zinc were investigated using a capillary-based micro-droplet cell. Pontiodynamic sweeps and capacity measurements were carried out in pH 9 borate buffer solution. The cyclic voltammograms and the capacity measurements on single grains with different crystallographic orientations in polycrystalline Zn showed a strong dependence of oxide growth on crystallographic grain orientation. The total charge consumed for oxide formation and the inverse capacity increased with an increase of surface packing density of grain. suggesting the oxide formation was greater on grains with higher surface packing density.

Preparation of Zirconia-Coated NiO Powder and its Microstructure ($ZrO_2$를 피복한 NiO 분말의 제조 및 미세구조)

  • 문지웅;이홍림;김구대;김재동;이동아;이해원
    • Journal of the Korean Ceramic Society
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    • v.35 no.7
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    • pp.653-658
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    • 1998
  • Zirconia coated NiO powders were prepared by the thermal hydrolysis of $Zro(NO_3)_2$.$6H_2O$ in a mixed solvent of alcohol and water. Amorphous zirconium hydroxide was uniformly coated on the surface of NiO powder with the thickness of 20nm. The $ZrO_2$ coating layer was crystallized to tetragonal $ZrO_2$ with the size of 40-60nm at $900^{\circ}C$. The coated NiO powder containing 15 vol% $ZrO_2$ was found to have a similar isoelectric point to that of the $ZrO_2$ The grain growth inhibition effect of the coated powders was superior to the mechanically mixed powders.

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Anisortopy of the Silicon Nitride Prepared by Tape Casting

  • Park, Dong-Soo;Kim, Changd-Won;Park, Chan
    • The Korean Journal of Ceramics
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    • v.5 no.2
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    • pp.119-124
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    • 1999
  • Silicon nitride ceramics with highly oriented microstructure were prepared by tape casting a slurry containing 5 wt% of the silicon nitride whiskers. The whiskers were aligned in the casting direction and worked as seeds for the grain growth. The anisotropy was observed from the sintering shrinkage, Vickers indentation crack lengths, and XRD patterns. The cracks were much longer on the surface normal to the aligned grains than on the tape casting surface where the lateral cracks were also observed. The effect of sintering additives and the annealing treatment on the indentation crack length was examined. The sample with higher silica content had longer cracks than the one with lower silica content. The crack length anisotropy increased after annealing at 2123K.

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Characteristic of Cu-Ag Added Thin Film on Molybdenum Substrate for an Advanced Metallization Process (TFT-LCDs에 적용 가능한 Cu-Ag 박막에 대한 Mo 기판 위에서의 특성조사)

  • Lee, H.M.;Lee, J.G.
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.257-263
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    • 2006
  • We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

Magnetic Properties of $GdBa_2Cu_3O_{7-y}$ Bulk Superconductors Fabricated by a Top-seeded Melt Growth Process (종자 결정 성장법으로 제조된 $GdBa_2Cu_3O_{7-y}$ 벌크 초전도체의 자기적 특성)

  • Kim, K.M.;Park, S.D.;Jun, B.H.;Ko, T.K.;Kim, C.J.
    • Progress in Superconductivity
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    • v.14 no.1
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    • pp.39-44
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    • 2012
  • The fabrications condition and superconducting properties of top-seeded melt growth (TSMG) processed $GdBa_2Cu_3O_{7-y}$ (Gd123) bulk superconductors were studied. Processing parameters (a maximum temperature ($T_{max}$), a temperature for crystal growth ($T_G$) and a cooling rate ($R_G$) through a peritectic temperature ($T_P$) for the fabrication of single grain Gd123 superconductors were optimized. The magnetic levitation forces, trapped magnetic fields, superconducting transition temperature ($T_c$) and critical current density ($J_c$) of the Gd123 bulks superconductors were estimated. Single grain Gd123 bulk superconductors were successfully fabricated at the optimized processing condition. The $T_c$ of a TSMG processed Gd123 sample was 92.5 K and the $J_c$ at 77 K and 0 T was approximately $50kA/cm^2$. The trapped magnetic field contour and magnetic levitation forces were dependent on the top surface morphology of TSMG processed Gd123 samples. The single grain Gd123 samples, field-cooled at 77 K using a Nd-B-Fe permanent magnet with 5.27 kG and 30 mm dia., showed the trapped magnetic field contour of a single grain with a maximum of 4 kG at the sample center. The maximum magnetic levitation forces of the single grain Gd123 sample, field-cooled or zero field-cooled, were 40 N and 107 N, respectively.

Effect of substratum types on the growth of assimilators and stolons of Caulerpa okamurae (Bryopsidales, Chlorophyta)

  • Seo Kyoung, Park;Jang K., Kim;Han Gil, Choi
    • ALGAE
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    • v.37 no.4
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    • pp.293-299
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    • 2022
  • To examine the effects of substratum types on the growth of Caulerpa okamurae, sand surface and sand burial experiments were conducted. Five assimilators (erect fronds) per replicate were cultured for 15 d on the surface of three different treatments: fine sand (200 ㎛), coarse sand (600 ㎛), and no sand (control). Also, three stolons and three assimilators were buried by fine grain or coarse grain sands and incubated for 15 d. In both experiments, other culture conditions included 25℃, 30 μmol photons m-2 s-1, and 16 : 8 h L : D (light : dark). In both experiments, stolon + assimilator-, assimilator-, and stolon-weights were measured. Relative growth rates (RGRs) of stolon + assimilator weights ranged from 0.43 to 1.95% d-1 at no sand and fine sand treatment, respectively. RGRs for the weight of stolon + assimilator and new assimilators were significantly greater on the fine- and coarse sand surface than the control. In the burial experiments, RGRs of stolons (4.28% d-1 at coarse sand and 5.57% d-1 at fine sand, respectively) were significantly greater than those of assimilators (1.38% d-1 at fine sand and 1.82% d-1 at coarse sand, respectively). When stolons were buried, RGRs for assimilators were greater at the fine sand than at the coarse sand treatment. On the other hand, RGRs of buried assimilators for total frond weights and for newly produced stolons were significantly greater at the coarse sands than at the fine sands. In conclusion, C. okamurae grew well with all substrates of sands and showed better growth on fine sands than coarse ones. This result suggests that the growth of stolons and assimilators of C. okamurae is stimulated after stable attachment to the sand substrates by rhizophores. In addition, stolons showed higher growth rates than the assimilators in the sand burial states, indicating that stolons are more tolerant to low light than assimilators of C. okamurae.