In general, the presence of non-selective intercrystalline (grain boundary) defects in polycrystalline metal-organic framework (MOF) or zeolite membranes, which are known to be ca. 1 nm in size, causes lower membrane performance (selectivity) than the intrinsically expected. In this study we show that applying a thin polymeric coating of polydimethylsiloxane (PDMS) on a polycrystalline MOF membrane is effective to cap the non-selective intercrystalline defects and therefore improve membrane performance. To demonstrate the concept, first, polycrystalline UiO-66, one of Zr-based MOFs, membranes were prepared by an in-situ solvothermal growth. By controlling membrane growth condition with respect to growth temperature, we were able to obtain polycrystalline UiO-66 membranes at 150 ℃ with intercrystalline defects of which the quantity is not significant, so it can be plugged by the suggested PDMS deposition. Second, their performances were compared before and after the PDMS deposition. As expected, the PDMS deposition ended up with a noticeable increase in CO2/N2 ideal selectivity from 6 to 14, indicating successful intercrystalline defect plugging. However, the enhancement in CO2/N2 selectivity was accompanied by a significant reduction in CO2 permeance from 5700 to 33 GPU because the PDMS deposition not only plugs defects but also forms a continuous coating on membrane surface, adding an additional transport resistance.
Ju Jeh Beck;Kang Tae Young;Cho Sung Jin;Sohn Tae Won
Journal of the Korean Electrochemical Society
/
v.7
no.3
/
pp.131-137
/
2004
Sol-gel method which provides better electrochemical and physiochemical properties compared to the solid-state method was used to synthesize the material of $LiFe_yMn_{2-y}O_4$. Fe was substituted to increase the structural stability so that the effects of the substitution amount and sintering temperature were analyzed. XRD was used for the structural analysis of produced material, which in turn, showed the same cubic spinel structure as $LiMn_2O_4$ despite the substitution of $Fe^{3+}$. During the synthesis of $LiFe_yMn_{2-y}O_4$, as the sintering temperature and the doping amount of Fe(y=0.05, 0.1, 0.2)were increased, grain growth proceeded which in turn, showed a high crystalline and a large grain size, certain morphology with narrow specific surface area and large pore volume distribution was observed. In order to examine the ability for the practical use of the battery, charge-discharge tests were undertaken. When the substitution amount of $Fe^{3+}\;into\;LiMn_2O_4$ increased, the initial discharge capacity showed a tendency to decrease within the region of $3.0\~4.2V$ but when charge-discharge processes were repeated, other capacity maintenance properties turned out to be outstanding. In addition, when the sintering temperature was $800\~850^{\circ}C$, the initial capacity was small but showed very stable cycle performance. According to EVS(electrochemical voltage spectroscopy) test, $LiFe_yMn_{2-y}O_4(y=0,\;0.05,\;0.1,\;0.2)$ showed two plateau region and the typical peaks of manganese spinel structure when the substitution amount of $Fe^{3+}$ increased, the peak value at about 4.15V during the charge-discharge process showed a tendency to decrease. From the previous results, the local distortion due to the biphase within the region near 4.15V during the lithium extraction gave a phase transition to a more suitable single phase. When the transition was derived, the discharge capacity decreased. However the cycle performance showed an outstanding result.
To study the effects of an urease inhibitor, N-(n-butyl)-thiophosphoric triamide (NBPT), and a nitrification inhibitor, dicyandiamide (DCD), on nitrogen losses and nitrogen use efficiency, urea fertilizer with or without inhibitors and slowrelease fertilizer (synthetic thermoplastic resins coated urea) were applied to direct-seeded flooded rice fields in 1998. In the urea and the urea+DCD treatments, NH$_4$$^{+}$ -N concentrations reached 50 mg N L$^{-1}$ after application. Urea+NBPT and urea+ NBPT+DCD treatments maintained NH$_4$$^{+}$ -N concentrations below 10 mg N L$^{-1}$ in the floodwater, while the slow-release fertilizer application maintained the lowest concentration of NH$_4$$^{+}$ -N in floodwater. The ammonia losses of urea+NBPT and urea+NBPT+DCD treatments were lower than those of urea and urea+DCD treatments during the 30 days after fertilizer application. It was found that N loss due to ammonia volatilization was minimized in the treatments of NBPT with urea and the slow-release fertilizer. The volatile loss of urea+DCD treatment was not significantly different from that of urea surface application. It was found that NBPT delayed urea hydrolysis and then decreased losses due to ammonia volatilization. DCD, a nitrification inhibitor, had no significant effect on ammonia loss under flooded conditions. The slow-release fertilizer application reduced ammonia volatilization loss most effectively. As N0$_3$$^{[-10]}$ -N concentrations in the soil water indicated that leaching losses of N were negligible, DCD was not effective in inhibiting nitrification in the flooded soil. The amount of N in plants was especially low in the slow-release fertilizer treatment during the early growth stage for 15 days after fertilization. The amount of N in the rice plants, however, was higher in the slow-release fertilizer treatment than in other treatments at harvest. Grain yields in the treatments of slow-release fertilizer, urea+NBPT+ DCD and urea+NBPT were significantly higher than those in the treatments of urea and urea+DCD. NBPT treatment with urea and the slow-release fertilizer application were effective in both reducing nitrogen losses and increasing grain yield by improving N use efficiency in direct-seeded flooded rice field.field.
Park Soo-Gil;Kim Gyu-Sik;Einaga Yasuaki;Fujishima Akira
Journal of the Korean Electrochemical Society
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v.3
no.4
/
pp.200-203
/
2000
Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.
Journal of the Korea Academia-Industrial cooperation Society
/
v.20
no.4
/
pp.497-502
/
2019
Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.
A port experiment was conducted to compare the effect of chemical forms of nitrogen fertilizers on the rice growth and soil characteristics. The nitrogen fertilizers used for this study were ammonium sulfate, ammonium nitrate, ammonium chloride and urea. The results are summarized as follows. 1. The differences in pH of the soil and surface water between treatments during the first week after fertilizer application were great and the pH values were in the order of urea > ammonium nitrate > ammonium sulfate > ammonium chloride treatment. However the differences were insignificant after the first week. 2. The differences in pH of the air-dried soil somewhat increased and pH values were in the order of urea > ammonium nitrate > ammonium chloride > ammonium sulfate treatment. 3. Sulfur contents of the soil and the rice leaf and N content of the rice leaf were highest when ammonium sulfate was applied. But there were few differences between the treatments in total N content of the soil and in P, K, Ca and Mg contents of the soil and the rice leaf. 4. Number of tillers and dry matter weight of the rice plant were highest in ammonium sulfate plot throughout all the growing stages. 5. Number of panicle per hill was highest in ammonium sulfate plot, and this brought the highest grain yield in ammonium sulfate plot. The lowest grain yield in ammonium nitrate plot resulted from the lowest number of panicle per hill and ripened grain ratio.
Journal of the Microelectronics and Packaging Society
/
v.7
no.3
/
pp.45-54
/
2000
The effect of electropolishing far stamped leadframe on the removal of the edge burr and residual stress relief was examined. The present study showed that the electropolishing could be used for enhanced surface quality of stamped leadframes. The electropolishing was performed at the condition of 60% phosphoric acid electrolyte, 5 ampere of current and 3 cm electrode gap at $70^{\circ}C$ for 2 minutes for Alloy42 type leadframe, and $50^{\circ}C$ for 1.5 minutes for C-194 type leadframe. The FWHM values from X-ray diffraction showed that residual stress of electropolished leadframe recovered to the level of as-received raw materials and surface roughness measured by using AFM tuned out to be improved by 0.079 $\mu\textrm{m}$ and 0.014 $\mu\textrm{m}$ ($R_{rms}$) far alloy 42 and C-194 type leadframes, respectively. The plated thickness using XRF showed the improved uniformity in thickness variation by 0.4~0.5 $\mu\textrm{m}$ and grain growth, which is favorable for interface adhesion, was also observed from the bake test samples. We could certify dimensional stability of leadframe with inspection by means of 3D-topography and hardness measurements.
Proceedings of the Materials Research Society of Korea Conference
/
2011.10a
/
pp.25.1-25.1
/
2011
Over the past few decades, metallic nanoparticles (NPs) have been of great interest due to their unique mesoscopic properties which distinguish them from those of bulk metals; such as lowered melting points, greater versatility that allows for more ease of processability, and tunable optical and mechanical properties. Due to these unique properties, potential opportunities are seen for applications that incorporate nanomaterials into optical and electronic devices. Specifically, the development of metallic NPs has gained significant interest within the electronics field and technological community as a whole. In this study, gold (Au) pads for surface finish in electronic package were developed by inkjet printing of Au NPs. The microstructures of inkjet-printed Au film were investigated by various thermal treatment conditions. The film showed the grain growth as well as bonding between NPs. The film became denser with pore elimination when NPs were sintered under gas flows of $N_2$-bubbled through formic acid ($FA/N_2$) and $N_2$, which resulted in improvement of electrical conductance. The resistivity of film was 4.79 ${\mu}{\Omega}$-cm, about twice of bulk value. From organic anlayses of FTIR, Raman spectroscopy, and TGA, the amount of organic residue in the film was 0.43% which meant considerable removal of the solvent or organic capping molecules. The solder ball shear test was adopted for solderability and shear strength value was 820 gf (1 gf=9.81 mN) on average. This shear strength is good enough to substitute the inkjet-printed Au nanoparticulate film for electroplating in electronic package.
Journal of Advanced Marine Engineering and Technology
/
v.20
no.5
/
pp.103-113
/
1996
The properties of the deposited film depend on the deposition condition and these, in turn depend critically on the morphology and crystal orientation of the films. Therefore, it is important to clarify the nucleation occurrence and growth stage of the morphology and orientation of the film affected by deposition parameters, e.g. the gas pressure and bias voltage etc. In this work, magnesium thin flims were prepared on cold-rolled steel substrates by a thermo-eletron activation ion plating technique. The influence of nitrogen gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. The diffraction peaks of magnesium film became less sharp and broadened with the increase of nitrogen gas pressure. With an increase in nitrogen gas pressure, flim morphology changed from colum nar to granular structure, and surface crystal grain-size decreased. The morphology of films depended not only on gas pressure but also on bias voltage, i.e., the effect of increasing bias voltage was similar to that of decreasing gas pressure. The effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. Magnesium, in general, has not a good corrosion resistance in all environments. However, these magnesium films prepared by changing nitrogen gas pressure showed good corrosion resistance. Among the films, magnesium films which exhibited granular structure had the highest corrosion resistance. The above phenomena can be explained by applying the effects of adsorption, occlusion and ion sputter of nitrogen gas.
ZnO thin films were grown on a glass by RF sputtering system with RF power 100W and oxygen partial pressure of $0%{/sim}30%$. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 1.5 to 3.8eV. Also, scanning electron microscope(SEM) was used for the analysis of surface crystallization condition. From elliptic constants spectra, optical constants, thickness and roughness of ZnO films were evaluated. Total thickness of ZnO films obtained by ellipsometry showed good agreement with SEM data. It was found that the grain size of the films were getting smaller with increasing oxygen partial pressure. Band-gap of ZnO films increase with the oxygen partial pressure. These findings clearly indicate that optical properties of ZnO films are strongly dependent on the oxygen partial pressure. It could be explained that increasing the oxygen partial pressure induced high crystalline imperfection in the ZnO films.
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