• Title/Summary/Keyword: Surface grain growth

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The Materials Science of Chalcopyrite Materials for Solar Cell Applications

  • Rockett, Angus
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.53-53
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    • 2011
  • This paper describes results for surface and bulk characterization of the most promising thin film solar cell material for high performance devices, (Ag,Cu) (In,Ga) Se2 (ACIGS). This material in particular exhibits a range of exotic behaviors. The surface and general materials science of the material also has direct implications for the operation of solar cells based upon it. Some of the techniques and results described will include scanning probe (AFM, STM, KPFM) measurements of epitaxial films of different surface orientations, photoelectron spectroscopy and inverse photoemission, Auger electron spectroscopy, and more. Bulk measurements are included as support for the surface measurements such as cathodoluminescence imaging around grain boundaries and showing surface recombination effects, and transmission electron microscopy to verify the surface growth behaviors to be equilibrium rather than kinetic phenomena. The results show that the polar close packed surface of CIGS is the lowest energy surface by far. This surface is expected to be reconstructed to eliminate the surface charge. However, the AgInSe2 compound has yielded excellent atomic-resolution images of the surface with no evidence of surface reconstruction. Similar imaging of CuInSe2 has proven more difficult and no atomic resolution images have been obtained, although current imaging tunneling spectroscopy images show electronic structure variations on the atomic scale. A discussion of the reasons why this may be the case is given. The surface composition and grain boundary compositions match the bulk chemistry exactly in as-grow films. However, the deposition of the heterojunction forming the device alters this chemistry, leading to a strongly n-type surface. This also directly explains unpinning of the Fermi level and the operation of the resulting devices when heterojunctions are formed with the CIGS. These results are linked to device performance through simulation of the characteristic operating behaviors of the cells using models developed in my laboratory.

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Thermal Shock Behavior of TiN Coating Surface by a Pulse Laser Ablation Method

  • Noh, Taimin;Choi, Youngkue;Jeon, Min-Seok;Shin, Hyun-Gyoo;Lee, Heesoo
    • Korean Journal of Metals and Materials
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    • v.50 no.7
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    • pp.539-544
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    • 2012
  • Thermal shock behavior of TiN-coated SUS 304 substrate was investigated using a laser ablation method. By short surface ablation with a pulse Nd-YAG laser, considerable surface crack and spalling were observed, whereas there were few oxidation phenomena, such as grain growth of TiN crystallites, nucleation and growth of $TiO_2$ crystallites, which were observed from the coatings quenched from $700^{\circ}C$ in a chamber. The oxygen concentration of the ablated coating surface with the pulse laser also had a lower value than that of the quenched coating surface by Auger electron spectroscopy and electron probe micro analysis. These results were attributed to the fact that the properties of the pulse laser method have a very short heating time and so the diffusion time for oxidation was insufficient. Consequently, it was verified that the laser thermal shock test provides a way to evaluate the influence of the thermal shock load reduced oxidation effect.

A Study on Characteristics of the Ni-Pd Alloy Electroplating (Ni-Pd 합금 전해도금의 특성에 관한 연구)

  • Cho, Eun-Sang;Jung, Dae-Gon;Cho, Jin-Ki
    • Journal of the Korean institute of surface engineering
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    • v.48 no.6
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    • pp.253-259
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    • 2015
  • The test equipment becomes more important with the development of semiconductor industry. MEMS probe is an important testing component to detect the defects from the generated electric signal when it contacts the metal pad of semiconductor devices. Ni-Pd alloy has been paid attention to as a candidate of MEMS probe material because of its high surface hardness and relatively low resistivity. In this study, electroplated Ni-Pd alloy has been prepared by using ethylene diamine as a complexing agent. Solid solution alloy coating could be formed when concentration of palladium chloride and current density were in the ranges of 1~5 mM and $0.2{\sim}1.5A/dm^2$, respectively. The increase of current density brought about an decrease in palladium content, which made both of lattice parameter and grain size smaller. As a result of grain refinement, high hardness could be obtained. However, surface cracking was observed due to residual stress when the current density was above $1.3A/dm^2$. When effects of heat treatment temperature on hardness and sheet resistance were investigated, the accompanied grain growth decreased both of them. The decrease of hardness remained stable at a temperature of $200^{\circ}C$. The sheet resistance was drastically reduced at $100^{\circ}C$. After that, it was found to become constant.

Effects of Plasma Nitriding on the Surface Charcteristice Of Stainless Steels (스테인스강의 표면특성에 미치는 플라즈마질화의 영향)

  • 최한철;김관휴
    • Journal of the Korean institute of surface engineering
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    • v.30 no.2
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    • pp.144-154
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    • 1997
  • Effects of plasma nitriding on the surface charcteristice of stainless steel(SS) were investjgated by utilizing wear tester, micro-hardness tester and potentiostat. The surface and corrosion morphology of plasma nitrided SS were analyzed by utilizing optical microscopy, SEM, XRD and WDX. It was found that plasma nitriding at $550^{\circ}C$, compared with $380^{\circ}C$, prodiced a good wear resistance and hardness as nitriding time increased, whereas Mo addition showd that were resistance and hardness decreased. Intergranular corrosion(IGC) resistance improved significantly in the case of plasma nirtrided SS containing 4.05wt% Mo at $380^{\circ}C$ because that nitrogen and Mo ast syner gidically to form a protective layer on surface which is responsible for the aggresive SCN-ion. Plasma nitrided at $550^{\circ}C$ decreased IGC as Mo content increased. Pitting improved in the plasma nitirided SS at Mo content incresased owing to retard a nucleation and growth of chromium carbide or nitirde in grain boundary.

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Microstructural Evolution of $BaTiO_3$ Ceramics during the Cubin-Hexagonal Phase Transformation ($BaTiO_3$ 요업체에서 Cubic-Hexagonal 상전이에 따른 미세조직 변화)

  • 이태헌;이정아
    • Journal of the Korean Ceramic Society
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    • v.33 no.4
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    • pp.448-454
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    • 1996
  • The microstructural evolution of BaTiO3 ceramics during cubic-hexagonal phase transformation was investiga-ted. In the case of phase transformation from cubic to hexagonal BaTiO3 the hexagonal phase nucleated at the surface region of specimen. On the other hand in the case of that from hexgonal phase to cubic, cubic phase was initiated at the center region of specimen. And fast grain growth and irregular grain boundary shape could be also observed during these transformation processes. Besides low densified hexagonal BaTiO3 specimen was made with low forming pressure. The phase transformation of these specimens toward cubic phase was relatively retarded comparing with dense hexagonal BaTiO3 specimens. was made low forming pressure.. The phase transformation of these specimens toward cubic phase was relatively retarded comparing with dense hexagonal BaTiO3 specimens. These results were explained that hexagonal BaTiO3 had lowder surface energy than cubic phase.

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The Effect of Substrate Surface Roughness on In-Situ Intrinsic Stress Behavior in Cu Thin Films (기판 표면 조도에 따른 구리박막의 실시간 고유응력 거동)

  • Cho, Moohyun;Hwang, Seulgi;Ryu, Sang;Kim, Youngman
    • Korean Journal of Metals and Materials
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    • v.47 no.8
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    • pp.466-473
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    • 2009
  • Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.

Processing and Microstructure of Alumina Coated with $Al_2O_3$/SiC Nanocomposite

  • Ha, Jung-Soo;Kim, C-S.;D-S. Cheong
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.06a
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    • pp.19-22
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    • 1997
  • The surface modificaion of alumina by $Al_2$O$_3$/SiC nanocomposite coating was studied in terms of processing and microstructure. A powder slurry of 5 vol% SiC composition was dipcoated onto presintered alumina bodies and pressurelessly sintered at 1$700^{\circ}C$ for 2 h in $N_2$. The used of organic binder and plasticizer in the slurry preparation, and the control of the density of presintered alumina body were found to be necessary to avoid cracking and warping during processing. The nanocomposite coating well bonded to the alumina body with thickness about 110 ${\mu}{\textrm}{m}$. The average grain size of coating (2 ${\mu}{\textrm}{m}$) was much finer than that of alumina body (13 ${\mu}{\textrm}{m}$). Fracture surface observations revealed mostly transgranular fracture for the coating, whereas intergranular fracture for the alumina body. Some pores (about 6%) were observed in the coating layer, although the alumina body showed fully dense microstructure.

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Characterization of polycrystalline diamond thin films deposited by using an MPCVD (MPCVD를 이용한 다결정 다이아몬드 박막의 증착 및 물성 분석)

  • Lee, Jin-Bock;Park, Jin-Seok;Ryu, Kyung-Sun;Kwon, Sang-Jik
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1330-1332
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    • 1998
  • Polycrystalline diamond films are deposited on a Si substrate by employing a 2.45 GHz $\mu$-wave plasma CVD system. Prior to depositing the diamond film, a DPR(diamond photo-resist) layer is coated to enhance the nucleation density. The growth rate of diamond films increases with the $\mu$-wave power and approaches to be about $1.5{\mu}m/hr$ at 1100 W. Structural properties of diamond films deposited are characterized from their SEM photographs, Raman spectra, and AFM surface images. Lager grain size, higher intensity of diamond peak, and smoother surface are observed for films deposited at a higher power. The possible mechanism on the diamond growth is also discussed to explain the experimental results.

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The Growth Behavior of Surface Grains of WC-6%Co Alloy during Heat Treatment (WC-Co 소결체의 열처리시 나타나는 표면 입자 성장의 거동에 관한 연구)

  • 여수형;이욱성;백영준;채기웅;임대순
    • Journal of the Korean Ceramic Society
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    • v.38 no.1
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    • pp.28-33
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    • 2001
  • WC-6%Co 소결체를 열처리할 때 발생하는, 시편 표면에서의 급격한 입자 성장 거동을 열처리 분위기를 변수로 하여 관찰하였다. 열처리 분위기로 수소와 메탄을 각각 사용하였고, 온도는 1400~145$0^{\circ}C$, 압력은 1~3 Torr, 그리고 시간은 100분까지 변화시켰다. 표면에서의 입자 성장은 수소 분위기보다 메탄 분위기를 사용하는 경우 훨씬 빠르게 일어났다. 그리고 열처리 온도가 증가할수록, 압력이 감소할수록 입자 성장 속도가 증가하였다. 이때 성장한 입자의 크기 분포는 비정규 분포를 보였다. 한편, 입자 성장은 열처리시 증발하는 시편의 Co 무게 감소와 밀접한 관계를 보였다. 이러한 표면에서의 입자 성장 현상을 열처리한 조건과 관련되어 WC-Co 상태도에서 예측할 수 있는, 탈탄-탄화 반응 및 비정상 입자 성장 현상 관점으로 설명하였다.

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THE EFFECT OF SUBSTRATE TEMPERATURE ON GRAIN STRUCTURES AND MAGNETIC PROPERTIES OF Pd(Pt/Co/Pt) MODULATED MULTILAYERS

  • Xiao, Ying;Xu, Jun-Hao;Wittborn, Jesper;Yu, Seong-Cho;Rao, K.V.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.716-719
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    • 1995
  • Pd/(Pt/Co/Pt) modulated multilayer films have been deposited on various substrates with Pd/Pt buffer layers. Films grown at different temperatures have very distinct magnetic properties and surface microstructures. Atomic force(AFM) and scanning tunneling (STM) microscopies studies of these films reveal that films deposited at room temperature have small grain structures with an average grain size of about $140\;{\AA}$. However, much larger grains of about $1200\;{\AA}$ in size are observed in the films grown on buffer layers which were deposited at $500^{\circ}C$. These large grains are found to actually consist of smaller grains of about $170{\AA}$ in diameter. SQUID magnetic and Kerr hysteresis loop measurements indicate that multilayer films with large grains exhibit high magnetic coercivities of around 5 kOe. A subgrain growth model is proposed to understand the observed grain structures in the multilayers.

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