• 한국광학회지
• /
• 제25권4호
• /
• pp.193-199
• /
• 2014

본 연구에서는 FDTD와 광선추적기법을 결합한 시뮬레이션을 활용해 광원으로 설정된 쌍극자의 진동 방향, 유리기판에 적용된 Mie 산란입자와 Pillow 렌즈가 광결정 구조가 포함된 OLED의 광추출효율에 미치는 영향을 조사하였다. 쌍극자 광원의 진동방향이 OLED 표면에 대해 수평인 경우, 광결정구조만 적용된 OLED의 효율이 54%인데 반해 최적화된 조건의 Mie 산란입자, Pillow 렌즈가 적용된 OLED는 약 86%의 광추출효율을 나타냈다. 아울러 광결정 구조로 인해 특정 각도로 광도가 증가하는 문제점이 Mie 산란입자의 산란효과로 인해 완화될 수 있음을 알았다. 본 연구는 광추출효율을 향상시키는 다양한 광학구조를 적용함과 더불어 발광체 유기분자의 배향을 조절함으로써 OLED의 효율을 큰 폭으로 향상시킬 수 있음을 보여준다.

• 한국결정학회지
• /
• 제1권2호
• /
• pp.99-104
• /
• 1990

본 연구에서는 고밀도 광원 활용에 의한 유기금속화합물의 광분해 반응을 이용하여 AmBv 형광 전재료의 Hetero-epitaxy를 고찰하였다. 실제로 ArF Excimer laser(파장 193nm)에 의 하여 III족원으로 trlmethylgallium과 V족원으로 Ammonia의 2분자간 광분해 반응을 이용, (001)면 Sapphire 기판상에 증착시켰다. 생성되는 성막상태는 주사식 전자현미경, X-ray 회절 및 전자선 회절법 (RED)에 의하여 평가하였다. Laser광려기 유무에 따라 결정병합 상태 및 결정형태에 현저한 차이를 관찰할 수 있었으며, 특히 결정격자의 방위성에 큰 영향을 주고 있음이 주목되었다. 광원 조사방법은 수직조사에 의한 기판면 여기보다는 수평조사에 의 한 기상 반응물 여기가 더 효과적 이였다. Laser 광여기에 의한 성막층의 격자형성은 다음 과 같은 2가지 Model중 하나로 설명 할 수 있었다. (001)면 Sapphire//wurzite형 GaN의 (001) 면 또는 (001)면 Sapphire//wurzite형 GaN인의 (001) 면 -t Twinned Zincblende형의 GaN(111)면

• 한국전자파학회논문지
• /
• 제28권11호
• /
• pp.865-871
• /
• 2017

본 논문에서는 기존의 플루오린화 수소산(hydrofluoric acid)을 이용한 꼬인 형태의 광섬유형 결합기 표면에 젤라틴 수용액을 코팅한 뒤 흡수체로 활용하여 상대 습도 측정에 이용하였다. 제안한 광섬유형 습도 측정 센서는 기존 전자 소자를 이용한 감지 방식과 비교하면 값이 매우 저렴하며 광섬유 및 빛이 갖는 다양한 장점들을 취하고 있다. 본 논문에서 제시한 광섬유형 습도 센서는 상대습도 기준 약 40 %에서부터 85 %까지 측정한 결과를 보여주었으며, 계산 결과와도 그 경향이 잘 일치하는 것을 알 수 있다. 본 논문에서 제시한 광섬유형 결합기 센서 구조는 향후 센서 분야에서 습도 및 다양한 위험 기체를 감지할 수 있는 역할로 유망한 역할을 맡을 수 있을 것으로 기대된다.

• 한국진공학회지
• /
• 제20권3호
• /
• pp.176-181
• /
• 2011

$Y_{1-x}BO_3:Ce_x^{3+}$ 세라믹 청색 형광체를 고상 반응법을 사용하여 $Ce^{3+}$ 이온의 농도를 변화시키면서 합성하였다. 청색 형광체의 결정 구조, 표면 형상과 광학 특성은 각각 X-선 회절 장치(XRD), 주사전자현미경, 광여기 및 발광 분광기를 사용하여 측정하였다. XRD 결과로부터 합성된 모든 형광체 분말의 주 피크는 (401)와 ($31\bar{2}$)면에서 발생한 회절 신호이었다. 광학 특성의 경우에, $Ce^{3+}$ 이온의 농도비가 0.10 mol일 때 여기 스펙트럼은 243 nm에서 발생하였고, 469 nm에 피크를 갖는 최대의 청색 형광 스펙트럼이 관측되었다.

• 한국재료학회지
• /
• 제21권11호
• /
• pp.611-616
• /
• 2011

Red-orange phosphors $Gd_{1-x}PO_4:{Eu_x}^{3+}$ (x = 0, 0.05, 0.10, 0.15, 0.20) were synthesized with changing the concentration of $Eu^{3+}$ ions using a solid-state reaction method. The crystal structures, surface morphology, and optical properties of the ceramic phosphors were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrophotometry. The XRD results were in accordance with JCPDS (32-0386), and the crystal structures of all the red-orange phosphors were found to be a monoclinic system. The SEM results showed that the size of grains increases and then decreases as the concentration of $Eu^{3+}$ ionincreases. As for the PL properties, all of the ceramic phosphors, irrespective of $Eu^{3+}$ ion concentration, had orange and red emissions peaks at 594 nm and 613 nm, respectively. The maximum excitation and emission spectra were observed at 0.10 mol of $Eu^{3+}$ ion concentration, just like the grain size. An orange color stronger than the red means that $^5D_0{\rightarrow}^7F_1$ (magnetic dipole transition) is dominant over the $^5D_0{\rightarrow}^7F_2$ (electric dipole transition), and $Eu^{3+}$ is located at the center of the inversion symmetry. These properties contrasted with those of a red phosphor $Y_{1-x}PO_4:{Eu_x}^{3+}$, which has a tetragonal system. Therefore, we confirm that the crystal structure of the host material has a major effect on the resulting color.

• Electronic Materials Letters
• /
• 제14권6호
• /
• pp.669-677
• /
• 2018

In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

• 생체재료학회지
• /
• 제22권4호
• /
• pp.352-359
• /
• 2018

Background: Black phosphorus (BP) has emerged as a novel class of nanomaterials owing to its unique optical and electronic properties. BP, a two-dimensional (2D) nanomaterial, is a structure where phosphorenes are stacked together in layers by van der Waals interactions. However, although BP nanodots have many advantages, their biosafety and biological effect have not yet been elucidated as compared to the other nanomaterials. Therefore, it is particularly important to assess the cytotoxicity of BP nanodots for exploring their potentials as novel biomaterials. Methods: BP nanodots were prepared by exfoliation with a modified ultrasonication-assisted solution method. The physicochemical properties of BP nanodots were characterized by transmission electron microscopy, dynamic light scattering, Raman spectroscopy, and X-ray diffractometry. In addition, the cytotoxicity of BP nanodots against C2C12 myoblasts was evaluated. Moreover, their cell imaging potential was investigated. Results: Herein, we concentrated on evaluating the cytotoxicity of BP nanodots and investigating their cell imaging potential. It was revealed that the BP nanodots were cytocompatible at a low concentration, although the cell viability was decreased with increasing BP nanodot concentration. Furthermore, our results demonstrated that the cells took up the BP nanodots, and the BP nanodots exhibited green fluorescence. Conclusions: In conclusion, our findings suggest that the BP nanodots have suitable biocompatibility, and are promising candidates as fluorescence probes for biomedical imaging applications.

• 융합신호처리학회논문지
• /
• 제25권2호
• /
• pp.52-57
• /
• 2024

난류 경계층 내부 와류 구조물 형상을 측정하기 위해 열선 유속계(Hot-wire sensor)를 스테퍼 모터 컨트롤러(Stepper motor controller)에 고정하여 측정 지점으로 이동시켰다. 유동장 내 표면 근처 유속은 상대적으로 느려 차후 측정 데이터 해석 시 신호처리 과정에서 전자파 간섭으로 민감하게 반응하게 된다. 전자파 잡음은 주로 컴퓨터나 기타 전자 장비의 전원 공급에서 발생하는데, 실험 장비 중 전원이 활성화된 스테퍼 모터(Stepper motor)에서 전자파 잡음이 열선 유속계와 연결된 BNC 케이블로 유입되었다. 이는 열선 유속계를 이동시키기 위해 모터 컨트롤러(Motor controller)에 전원 공급이 인가되면, 오실로스코프 화면에 전자파 잡음이 나타나는 것을 확인하였다. 열선 유속계에서 측정된 데이터에 예상치 못한 잡음이 포함될 가능성이 있으므로, 이를 감소시키고 측정 과정에서 신호대 잡음비(Signal-to -Noise Ratio, SNR)를 향상하도록 연결 케이블을 차폐시키고 전자파가 차단되는 컴퓨터로 교체하였다.

• 한국전기전자재료학회논문지
• /
• 제25권12호
• /
• pp.974-978
• /
• 2012

The effect of Cu coating on the sensing properties of nano $SnO_2:Cu$ based sensors for the $CH_4$, $CH_3CH_2CH_3$ gas was studied. This work was focussed on investigating the change of sensitivity of nano $SnO_2:Cu$ based sensors for $CH_4$, $CH_3CH_2CH_3$ gas by Cu coating. Nano sized $SnO_2$ powders were prepared by solution reduction method using stannous chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_2$) and NaOH and subsequent heat treatment. XRD patterns showed that nano $SnO_2$ powders with rutile structure were grown with (110), (101), (211) dominant peak. The particle size of nano $SnO_2:Cu$ powders at 8 wt% Cu was about 50 nm. $SnO_2$ particles were found to contain many pores, according to SEM analysis. The sensitivity of nano $SnO_2:Cu$ based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The sensitivity for both $CH_4$ and $CH_3CH_2CH_3$ gases was improved by Cu coating on the nano $SnO_2$ surface. The response time and recovery time of the $SnO_2:Cu$ gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 18~20 seconds, and 13~15 seconds, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.418-418
• /
• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.