• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.129-129
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• 2011

The limited understanding of the surface properties of $Pt_3Ni$ for the oxygen reduction reaction (ORR) in polymer electrolyte membrane fuel cell (PEMFC) has motivated the study of properties and electronic structures of seven layered $Pt_3Ni$ (001), (110), and (111) surfaces. The first principle method based on density functional theory (DFT) is carried out. It is found that the bulk $Pt_3Ni$ has a ferromagnetic ground state with the ordered fcc type L12 structure, which is in good agreement with other results. Non magnetic Pt has the induced magnetic moment due to the strong hybridization between 3d Ni and 5d Pt. The magnetic moment of Pt and Ni enhanced on the surface of each due to surface effect however the magnetic moment of surface Pt in the Pt-segregated Pt3Ni (111) decreased and the magnetic moment of Ni in Ni rich subsurface increased significantly. The calculated d band centers of Pt explain the possibilities for oxygen absorption and play the important roles in altering the catalytic properties. The spin polarized densities of states are presented in order to understand physical properties of Pt in different surfaces in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.79-79
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• 2010

The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• Journal of the Korean Applied Science and Technology
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• v.40 no.1
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• pp.71-80
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• 2023

Silver paste is a valuable electrode material for electronic device applications because it is easy to handle with relatively low heat treatment. This study treated the electrode surface using an atmospheric-pressure plasma jet on the silver-paste electrode. This plasma jet was generated in an argon atmosphere using a high voltage of 5.5 to 6.5 kV with an operating frequency of 11.5 kHz. Plasma-jet may be more beneficial to the printing process by performing it at atmospheric pressure. The electrode surface becomes hydrophilic quickly and contact angle variation is observed on the electrode surface as a function of plasma treatment time, applied voltage, and gas flow rate. Also, there was no deviation in the contact angle after the plasma treatment in the large-area sample, that means a uniform result could be obtained regardless of the substrate size. The outcomes of this study are expected to be very useful in forming a stacked structure in the manufacture of large-area electronic devices and future applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.949-952
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• 2002

The mechanisms of pretilt angle generation for a nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) surface containing trifluoromethyl moiety was studied. High LC pretilt angle on the blended polymer surface with F3 was measured and the pretilt angle increased with rubbing strength. However, the low LC pretilt angle on the blended polymer surface with F1 and F2 was measured. The high LC pretilt angle generated is attributable to trifluoromethyl moiety in backbone structure on the blended PI surface. Therefore, the high pretilt angle of NLC can be achieved by using the blended polymer surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.981-984
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• 2002

The mechanisms of pretilt angle generation for a nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) surface containing trifluoromethyl moiety were studied. High LC pretilt angle on the blended polymer surface with F3 was measured and the pretilt angle increased with rubbing strength. However, the low LC pretilt angle on the blended polymer surface with F1 and F2 was measured. The high LC pretilt angle generated is attributable to trifluoromethyl moiety in backbone structure on the blended PI surface. Therefore, the high pretilt angle of NLC can be achieved by using the blended polymer surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.399-402
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• 1999

In this paper, a new method for calculating capacitance in arbitrarily shape structure is Presented. This new approach based on divergence theorem of Gauss\`s law is acheive by Surface-Contacted Element(SCE) for Gaussian surface. To evaluate accurate capacitance value in nonuniform electric field. in two dimensional analysis the interpolation using the elements which contact one nod (PE: Point-Element) or two nod (FE: Face-Element) is employed. Because the elements contacted with surface are very small compared with total elements in analytic model, SCE method has shorter computing time to calculate capacitance. This proposed method is verified by comparing the simulated results with value obtained by analytic method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.702-705
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• 2011

Poly-Si wafers with resistivity of 1 [${\Omega}$-cm[ and thickness of 50 [${\mu}m$] were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 [cm/sec], minority carrier diffusion length in the base region 50 [${\mu}m$], front surface recombination velocity 100 [cm/sec], sheet resistivity of emitter layer 100 [${\Omega}/{\Box}$], BSF thickness 0.5 [${\mu}m$], doping concentration $5{\times}10^{19}\;cm^{-3}$. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19.8 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1973-1975
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• 2010

The electronic and adsorption structure of o-phthalaldehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface.