• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.256-256
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• 2009

This paper presents a proper condition to achieve above 17 % conversion efficiency using PC1D simulator. Crystalline silicon wafer with thickness of $240{\mu}m$ was used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer. Among the investigated variables, we learn that 2nd doping concentration as a key factor to achieve conversion efficiency higher than 17 %.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.174-179
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• 1996

We present a new physically based analytical equation for electron effective mobility in MOS inversion layers. The new semi-empirical model is accounting expicitly for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. This model shows excellent agreement with experimentally measured effective mobility data from three different published sources for a wide range of effective transverse field, channel doping and temperature. By accounting for screened Coulomb scattering due to doping impurities in the channel, our model describes very well the roll-off of effective mobility in the low field (threshold) region for a wide range of channel doping level (Na=3.0*10$^{14}$ - 2.8*10$^{18}$ cm$^{-3}$ ).

• 한국표면공학회지
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• 제33권2호
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• pp.87-92
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• 2000

Transparent and electrical conducting tin oxide thin films were fabricated on soda lime silicate glass by thermal chemical vapour deposition technique. Thin films were deposition from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant and 1,1,1,2-tetrafluoroethane as a doping material. Electrical properties of fabricated tin oxide films were changed depending on substrate temperature, and the amount of dopant. Resistivity of tin oxide films was reduced by doping fluorine or heat treatment. Thin films can be optimized at TMT flow rate of 8sccm, oxygen flow rate of 150sccm, 1,1,1,2-tetrafluoroethane floe rate of 300sccm and substrate temperature $380^{\circ}C$. In this conditions, the lowest resistivity of tin oxide films were $9$\times$10^{-4}$ $\Omega$cm.

• 진공이야기
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• 제3권4호
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• pp.19-23
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• 2016

Angle resolved photoemission spectroscopy (ARPES) is a powerful technique which can directly visualize the electronic structure of solid in detail including many-body interaction information. However, ARPES has a certain limitation in applying control parameters such as doping or pressure, which helps to dig out the clue to understand the desired phenomena or the target system. During ARPES experiment, the control parameter is the temperature only. Other parameters especially electric- and magnetic- field cannot be applied. Recently introduced surface-electron doping technique highlights new avenue to overcome such limitation. In this article, starting from introducing basic concepts of ARPES and its current status, the power of new technique will be demonstrated when it is combined to ARPES by introducing recent results on iron based superconductors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.417-420
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• 2004

The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.

• 한국표면공학회지
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• 제46권2호
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• 한국표면공학회지
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• 제29권5호
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• pp.325-329
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• 1996

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{\circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We used tris-dimethylaminoarsenic (DMAAs) as the metalorganic for p-doping. 4micron thick CdTe and subsequently 10micron thick HgCdTe were grown on (100) GaAs substrate. Interdiffused multilayer process in which thin CdTe and HgTe layers are grown alternately and interdiffused to obtain homogeneous HgCdTe alloys was used. Arsenic was doped during CdTe growth cycle. After growth HgCdTe was annealed at $415^{\circ}C$ for 15 min and then annealed again at $220^{\circ}C$ for 3 hr, both with Hg-saturate condition. We could obtain p-doping from 2.5$\times$$10^{16}$ to 6.6$\times$$10^{17}$$cm^{-3}$, depending on the DMAAs partial pressure. With the dual Hg-annealing, activation of arsenic was aboutt 90%, which was confirmed by SIMS measurement. With only low temperature annealing at $220^{\circ}C$ for 3hr, activation efficiency was about 50%.

• 한국표면공학회지
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• 제55권6호
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• pp.368-375
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• 2022

YSZ (Yttria Stabilized Zirconia) is used as a thermal barrier coating material for gas turbines due to its low thermal conductivity and high fracture toughness. However, the operating temperature of the gas turbine is rising according to the market demand, and the problem that the coating layer of YSZ is peeled off due to the volume change due to the phase transformation at a high temperature of 1400℃ or higher is emerging. To solve this problem, various studies have been carried out to have phase stability, low thermal conductivity, and high fracture toughness in a high temperature environment of 1400℃ or higher by doping trivalent and tetravalent oxides to YSZ. In this study, the monoclinic phase formation behavior and crystallinity were comparatively analyzed according to the total doping amount of oxides by controlling the doping amounts of Sc₂O₃ and Gd₂O₃, which are trivalent oxides, and TiO₂, which are tetravalent oxides, in YSZ. Through comparative analysis of monoclinic phase formation and crystallinity, the thermal conductivity of the thermal barrier coating layer according to the amount of doping was predicted.

• 한국수소및신에너지학회논문집
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• 제16권2호
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• pp.136-141
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• 2005

Li-doped NiO was synthesized by molten salt method. $LiNO_3$-LiOH flux was used as a source for Li doping. $NiCl_2$ was added to the molten Li flux and then processed to make the Li-doped NiO material. Li:Ni ratios were maintained from 5:1 to 30:1 during the synthetic procedure and the Li doping amount of synthesized materials were found between 0.086-0.190 as a Li ion to Ni ion ratio. Li doping did not change the basic cubic structural characteristics of NiO as evidenced by XRD studies, however the lattice parameter decreased from 0.41769nm in pure NiO to 0.41271nm as Li doping amount increased. Hydrogen gas sensors were fabricated using these materials as thick films on alumina substrates. The half surface of each sensor was coated with the Pt catalyst. The sensor when exposed to the hydrogen gas blended in air, heated up the catalytic surface leaving rest half surface (without catalyst) cold. The thermoelectric voltage thus built up along the hot and cold surface of the Li-doped NiO made the basis for detecting hydrogen gas. The linearity of the voltage signal vs $H_2$ concentration was checked up to 4% of $H_2$ in air (as higher concentrations above 4.65% are explosive in air) using Li doped NiO of Li ion/Ni ion=0.111 as the sensor material. The response time T90 and the recovery time RT90 were less than 25 sec. There was minimum interference of other gases and hence $H_2$ gas can easily be detected.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.