• Journal of Magnetics
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• v.18 no.4
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• pp.400-404
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• 2013

Grain boundary diffusion technique with $DyH_3$ nanoparticles was applied to fabricate Dy-less sintered Nd-Fe-B permanent magnets with high coercivity. The magnetic properties and microstructure of magnets were systematically studied. The coercivity and remanence of grain boundary diffusion magnet were improved by 60% and reduced by 7% compared with those of the original magnet, respectively. Meanwhile, both the remanence temperature coefficient (${\alpha}$) and the coercivity temperature coefficient (${\beta}$) of the magnets were improved after diffusion treatment. Investigation shows that Dy is preferentially enriched as (Nd, Dy)$_2Fe_{14}B$ phase in the surface region of the $Nd_2Fe_{14}B$ matrix grains indicated by the remarkable enhancement of the magneto-crystalline anisotropy field of the magnet. As a result, the magnet diffused with a small amount of Dy nanoparticles possesses enhanced coercivity without remarkably sacrificing its magnetization.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.3 no.3
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• pp.5-12
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• 1990

This study has been conducted to establish the carburizing characteristics of low carbon alloy steels with varying amount of Ni element gas-carburized for 2 hours at $930^{\circ}C$ in an atmosphere of 94% $N_2$-6% $C_3H_8$ gas mixture with some changes in gas pressure passing through the diffusion plate in the fluidized-bed furnace. The results obtained from the experiment are as follows : (1) Optical micrograph has shown that the carburized layer consists of retained austenite and plate martensite and that retained austenite increases as the pressure of gas mixture passing through the diffusion plate as well as Ni content increase. (2) Chemical analysis has shown that carbon potential increases and carburizability is also improved due to a less degree of fluidization as the pressures of gas mixtures passing through the diffusion plate increase, resulting in, however, a severe formation of soot, and the gas pressure is necessarily regulated. (3) It has been revealed that carbon concentration hardness values at a given distance measured from the surface within the carburized case. Increase with increasing the pressure of gas mixtures passing through the diffusion plate and decrease with increasing Ni content. (4) The effective case depth has been shown to almost linearly increase as the pressure of gas mixtures passing through the diffusion plate is increased and to decrease with increasing Ni content.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.995-1002
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• 2010

This study investigated the effect of process temperature on the alloying process during synthesis of $Sm_2Fe_{17}$ powder from ball-milled samarium oxide ($Sm_2O_3$) powders and a solid reducing agent of calcium hydrides ($CaH_2$) using iron nanopowder (n-Fe powder) by a reduction-diffusion (R-D) process. The $n-Fe-Sm_2O_3-CaH_2$ mixed powders were subjected to heat treatment at $850{\sim}1100^{\circ}C$ in $Ar-H_2$ for 5 h. It was found that the iron nanopowders in the mixed powders are sintered below $850^{\circ}C$ during the R-D process and the $SmH_2$ is synthesized by a reduced Sm that combines with $H_2$ around $850^{\circ}C$. The results showed that $SmH_2$ is able to separate Sm and $H_2$ respectively depending on an increase in process temperature, and the formed $Sm_2Fe_{17}$ phase on the surface of the sintered Fe nanopowder agglomerated at temperatures of $950{\sim}1100^{\circ}C$ in this study. The formation of the $Sm_2Fe_{17}$ layer is mainly due to the diffusion reaction of Sm atoms into the sintered Fe nanopowder, which agglomerates above $950^{\circ}C$. We concluded that nanoscale $Sm_2Fe_{17}$ powder can be synthesized by controlling the diffusion depth using well-dispersed Fe nanopowders.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.636-641
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• 2000

The purpose of this study is assessing the characteristics of surface aging and recovery of hydrophobicity for silicone rubber which takes a great interest as outdoor insulation recently subjected to the combined stressed of salt fog and AC power. The methods for assessing are contact angle ATR-FRIR, AFM and XRD. In addition salt fog method is adopted as the artificial contamination experiment and AC power is applied 24 hour on and 24 hour off repeatedly for 5 cycles. The results suggest that degraded surface was more rough than virgin but was restored water repellency through the off cycle. It was due to not only the formation of fractal surface but also maintenance of hydrophobic surface by diffusion of low molecular oil. Although surface recovers initial hydropohbicity there are possibilities of decreasing electrical performance due to irreversable changes such as depolymerization of surface and loss of filler particles. This fact is confirmed by surface conductivity measurement showing that the degradation is significant and the recovery of hydrophobicity is imperfect as the energized cycle increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.77-81
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• 1998

The eptiaxial growth of Ge on the clean and surfactant (Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24 ML at the substrate temperature of $200^{\circ}C$. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be $200^{\circ}C$. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity osicillation was very stable and periodic up to 38 ML, and the d2$\times$2 structure was not charged with continued adsorption of Ge at the substrate temperature of 2002$\times$2. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.751-756
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• 2016

Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.9-15
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• 2008

Mokumegane is one of the sophisticated metal craft techniques enabling wood grain surface effect. To embody the mokumegane, an ingot of well-bonded stacked metal plates has been required. Traditionally prepared mokumegane ingots were bonded using charcoal which enables reduction atmosphere, but sometimes end up with collapse of bonding interface due to the lack of reliable process control. We proposed a systematic vacuum direct bonding process for ingots. First, we confirmed copper//copper homogeneous plate bonding at $900^{\circ}C$ by applying uniaxial press of 2.5kg. We observed 80min required to obtain 90%-bonding ratio and the diffusion coefficient would be enhanced up to 100 times due to surface effect. Second, by considering enhanced diffusion behavior, we also obtained optimum bonding condition in copper/silver heterogeneous plates that ensures 90%-bonding ratio at $700^{\circ}C$ for 10min with apply uniaxial press. A 7-layered copper/silver ingot is prepared successfully, and eventually the prototype mokumegane cases for mobile phone were fabricated with these ingot.