• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.63-69
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• 1994

The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.921-926
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• 1994

The characteristics of gate oxide significantly depend on the last chemical solution used in cleaning process. The standard RCA, HF-last, SC1-last, and HF-only processes are the pre-gate oxide cleaning processes utilized in this experiment. Cleaning process was followed by thermal oxidation in oxidation furnace at $900^{\circ}C$. A 100$\AA$ gate oxide was grown and characterized with using lifetime detector, VPD AAS, SIMS, TEM, and AFM. The results of HF-last and HF-only were shown to be very effective to remove the metallic impurities. And these two splits also showed long minority carrier lifetimes. The surface and interface morphologies of the oxide were examined with AFM and TEM. The rough surface morphologies were observed with the cleaning splits containing the SC1 solution. The smooth surface and interface was observed with the HF-only cleaning process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Journal of the Korean Recycled Construction Resources Institute
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• v.10 no.1
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• pp.56-65
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• 2022

This paper aims at estimating self-cleaning performance of mortar coated with photocatalytic suspension under various conditions. Experimental variables included the concentration (1.5 % and 3.0 %) of photocatalytic suspension for coating mortar specimen, the presence of hydrophilic agent in photocatalytic suspension, and applying the primer on the surface of mortar. The color change of methylene blue solution increased and accordingly self-cleaning performance increased as photocatalytic concentration increased. The presence of hydrophilic agent in photocatalytic suspension slightly decreased the self-cleaning performance compared to the conventional photocatalytic suspension. Test results also showed that mortar specimen including primer and specimen not including primer did not show significantly different self-cleaning performance. In addition, cracks on the surface of mortar specimens decreased as the photocatalytic concentration increased. Therefore, increase in cracks on the surface of mortar at different photocatalytic concentration might adversely affect the self-cleaning performance of mortar specimens.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.403-408
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• 2001

In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

• Clean Technology
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• v.7 no.1
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• pp.13-25
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• 2001

With fast advancement of fine machineries and semiconductor industries in recent decades, the ultra-cleaning of organic chemicals, submicron particles from contaminated unit equipments and products such as silicon wafers becomes one of the most important steps for further advancement of such industries. To date, two kinds of ultra cleaning techniques are used; one is the wet-cleaning and the other is the dry cleaning. In case of wet cleaning, removal of organic contaminants and submicron particles is made by DIW with additives such as $H_2O_2$, $H_2SO_4$, HCl, $NH_4OH$ and HF, etc. While the wet cleaning method is most widely adopted for various occasions, it is inevitable to discharge significant amount of toxic waste waters in environment. Dry cleaning is an alternative method to mitigate environmental pollution of the wet cleaning with maintaining comparable degree of cleaning to the wet cleaning. Although there are various concept of dry cleaning have been devised, the dry cleaning with environmentally-benign solvent such as carbon dioxide proven to show high degree of cleaning from the contaminated porous surface as well as from the bare surface. Thus, special global attention has been placing on this technique since it has important advantages of simple process schemes and no environmentally concern, etc. Thus, this article critically reviews the state-of-the-art of the supercritical fluid drying with emphasis on the thermo-physical characteristics of the supercritical solvent, environmental gains compared to other dry cleaning methods, and the generic aspects of the basic design and processing engineering.

• Journal of Korean Society of Water and Wastewater
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• v.31 no.2
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• pp.169-175
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• 2017

This study applied microbubbles to reduce membrane fouling in wastewater reuse membrane processes, evaluated and compared the transmembrane pressure with or without the application of microbubbles and the cleaning efficiency with the application of aeration and microbubbles. In addition, this study analyzed foulants removed from the membrane surface. Changes in the transmembrane pressure of membranes with the presence or absence of microbubbles were observed. As a result, transmembrane pressure (TMP) increasing rate decreased twofold when applying microbubbles to realize stable operations. This study compared and evaluated cleaning efficiency applying aeration and microbubbles. As a result, the cleaning efficiency was 5% higher on average when applying microbubbles. In turbidity and total organic carbon (TOC), foulants were discharged when applying microbubbles twice as much as applying aeration. It is thought that particulate foulants precipitated on the membrane surface were more likely to desorb because the adhesion between the membrane surface and particle was weakened by microbubbles. Therefore, it is considered possible to effectively control membrane fouling because of the increase in cleaning efficiency when applying microbubbles to wastewater reuse membrane processes.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.326-328
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• 1995

SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Journal of Conservation Science
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• v.26 no.2
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• pp.203-211
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• 2010

Analytic research on the surface pollutant of the three storied-pagoda at the west of Gameunsaji site as well as studies of previous wet cleaning cases was undertaken in order to decide cleaning method for removing inorganic pollutants. The status of pollutant was examined by naked eye observation, SEM-EDS, XRD. Then it was compared and categorized through qualitive and quantitative analysis. The result showed that the surface pollutants consisted of iron compounds or sulfur compounds and it was crystallized in the form of circle, oval, needle, etc. Result, Low-pressure rotating vortex process cleaning, with which particular matters are sprayed in swirl, is considered to be the best method to remove the pollutants.