• 한국분말재료학회지
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• 제12권6호
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• pp.422-427
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• 2005

The $Al_2O_3$ with various phases were prepared by simple ex-situ hydrolysis and spark plasma sintering (SPS) process of Al powder. The nano bayerite $(\beta-Al(OH)_3)$ phase was derived by hydrolysis of commercial powder of Al with micrometer size, whereas the bohemite (AlO(OH)) phase was obtained by hydrolysis of nano Al powder synthesized by pulsed wire evaporation (PWE) method. Compaction as well as dehydration of both nano bayerite and bohemite was carried out simultaneously by SPS method, which is used to fabricate dense powder compacts with a rapid heating rate of $100^{\circ}C$ per min. under the pressure of 50MPa. After compaction treatment in the temperature ranges from $100^{\circ}C\;to\; 1100^{\circ}C$, the bayerite and bohemite phases change into various alumina phases depending on the compaction temperatures. The bayerite shows phase transition of $Al(OH)_3{\to}{\eta}-Al_2O_3{\to}{\theta}-Al_2O_3{\to}\alpha-Al_2O_3$ sequences. On the other hand, the bohemite experiences the phase transition from AlO(OH) to ${\gamma}-Al_2O_3\;at\;350^{\circ}C.$ It shows AlO(OH) ${\gamma}-Al_2O_3{\to}{\delta}-Al_2O_3{\to}{\alpha}-Al_2O_3$ sequences. The ${\gamma}-Al_2O_3$ compacted at $550^{\circ}C$ shows a high surface area $(138m^2/g)$.

• 한국분말재료학회지
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• 제20권6호
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• pp.453-459
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• 2013

Lanthanum/gadolinium zirconate coatings are deposited via suspension plasma spray with suspensions fabricated by a planetary mill and compared with hot-pressed samples via solid-state reaction. With increase in processing time of the planetary mill, the mean size and BET surface area change rapidly in the case of lanthanum oxide powder. By using suspensions of planetary-milled mixture between lanthanum or gadolinium oxide and nano zirconia, dense thick coatings with fully-developed pyrochlore phases are obtained. The possibilities of these SPS-prepared coatings for TBC application are also discussed.

• 한국재료학회지
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• 제11권6호
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• pp.527-532
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• 2001

O$_2$plasma와 H(hfac)을 이용한 Cu 박막의 건식 식각을 조사하였다. 휘발성이 큰 Cu(hfac)$_2$와 $H_2O$를 탈착시키기 위하여 $O_2$ Plasma를 이용한 Cu 박막의 산화와 생성된 Cu 산화막을 H(hfac)과의 반응으로 제거하는 공정으로 식각을 수행하였다. Cu 박막의 식각율은 50-700 /min의 범위를 보였으며, 기판온도, H(hfac)/O$_2$ 유량비, plasma power에 따라 변하였다. Cu 박막의 식각율은 기판온도 215$^{\circ}C$보다 높은 온도구간에서 RF power가 증가함에 따라 증가하였고, 산화 공정과 H (hfac)과의 반응이 균형을 이루는 최적의 H (hfac)/O$_2$ 유량비는 1:1임을 확인하였다. Ti mask를 사용한 Cu Patterning은 유량비 1 : 1, 기판온도 25$0^{\circ}C$에서 실시하였고, 30$^{\circ}$외 taper slope를 갖는 등방성 etching profile을 얻을 수 있었다. Taper angle을 갖는 Cu 건식 patterning은 고해상도의 대면적 thin film transistor liquid-crystal(TFT-LCDs)를 위래 필요한 것으로써 기판온도, RF power, 유량비를 조절한 one-step 공정으로부터 성공적으로 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1486-1489
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• 2009

Micro wall is fabricated using iterative screen printing that it is able to fabricate the pattern as low cost, simple process, formation of pattern at large area on the various substrates. In the process of micro wall fabrication using screen printing, the printing result with pressure change in process and improvement of surface roughness using hydrophillic plasma treatment are included. Height of micro wall increase linearly and precision of iteration is very high. Error rate of printed pattern width is very high, but change rate of width is under 10 %. Fabricated micro pattern have minimum width $48.75{\mu}m$ and maximum height $75.45{\mu}m$ with aspect ratio 1.55.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.267-269
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• 1994

Various types of plasma display panels(PDPs) have been developed to realize the flat panel display device. But, many of its characteristics must be improved before it can be commercialized. In order to investigate tile characteristics of micro discharge in a PDP ceil, we have constructed a micro-gap discharge system whose electrode gap can be adjustable between $100-1000{\mu}m$ within $0.1{\mu}m$ accuracy. We measured the minimum sustain voltage, current, delay time of discharge while changing parameters(electrode gap distance, electrode surface area, pressure) which influence discharge characteristics.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국진공학회지
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• 제8권4B호
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• pp.497-506
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• 1999

Carbon has been widely used for the material of plasma facing components in fusion experiment devices like a tokamak, because carbon has good thermal and mechanical properties. However carbon gas a relatively high ougassing rate. Therefore the amount and the surface area of the carbon material used in the vessel will determine the background pressure of the vacuum vessel. In this experiment influences of carbon on the vacuum performance was investigated by measuring chamber pressure, ougassing rater and gas spectrum of carbon fiber composite (CFC) samples in various situations, pumping out, chamber baking, carbon heating (250~$500^{\circ}C$), exposure to atmosphere for maintenance of in-vessel components, etc., occurring routinely during tokamak operations.

• 한국세라믹학회지
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• 제34권10호
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• pp.1003-1008
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• 1997

The (La, Sr)MnO3 powder used as air-electrode material of Solid Oxide Cell (SOFC) was synthesized by Modified-GNP(Modified-Glycine Nitrate Process). The powders were prepared using oxide and carbonate stable in atmosphere and nitric acid was used as a solvent of starting material as well as an oxidant for combustion. The (La, Sr)MnO3 powders were synthesized with 0.5, 1, 2, 3, 4 of glycine/cation molar ratio. The ICP (Inductively Coupled Plasma Mass Spectrometer) result represented compositional equality between synthesized and desired powders. In case of 2 molar ratio, the as-synthesized powder showed perovskite phase and specific surface area were 19 $m^2$/g. After calcination of 85$0^{\circ}C$, the calcined powder except 0.5, 1 molar ratio of glycine to cation showed perovskite phase.