• Title/Summary/Keyword: Superposed Beam

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Crack Identification Using Evolutionary Algorithms in Parallel Computing Environment (병렬 환경하의 진화 이론을 이용한 결함인식)

  • Sim, Mun-Bo;Seo, Myeong-Won
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.9
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    • pp.1806-1813
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    • 2002
  • It is well known that a crack has an important effect on the dynamic behavior of a structure. This effect depends mainly on the location and depth of the crack. To identify the location and depth of a crack in a structure, a classical optimization technique was adopted by previous researchers. That technique overcame the difficulty of finding the intersection point of the superposed contours that correspond to the eigenfrequency caused by the crack presence. However, it is hard to select a trial solution initially for optimization because the defined objective function is heavily multimodal. A method is presented in this paper, which uses continuous evolutionary algorithms(CEAs). CEAs are effective for solving inverse problems and implemented on PC clusters to shorten calculation time. With finite element model of the structure to calculate eigenfrequencies, it is possible to formulate the inverse problem in optimization format. CEAs are used to identify the crack location and depth minimizing the difference from the measured frequencies. We have tried this new idea on a simple beam structure and the results are promising with high parallel efficiency over about 94%.

The study on photoreflectance characteristics of the $Al_xGa_{1-x}As$ epilayer grown by MBE method (MBE 법으로 성장시킨 $Al_xGa_{1-x}As$ 에피층의 Photoreflectance 특성에 관한 연구)

  • 이정렬;김인수;손정식;김동렬;배인호;김대년
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.341-347
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    • 1998
  • We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.

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An Experimental Study of the Synthetic Sinc Wave in Ultrasonic Imaging (초음파 의료 영상에서 합성 Sinc 음장 집속방법의 실험적 고찰)

  • 이광주;정목근
    • Journal of Biomedical Engineering Research
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    • v.23 no.3
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    • pp.243-251
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    • 2002
  • Synthetic zinc wave employs Pulsed plane wave as transmit beam with linear time delay curve. The received echoes in different transmit directions at different transmit times are superposed at imaging Points with Proper time delay compensation using synthetic focusing scheme. This scheme. which uses full aperture in transmit, obtains a high SNR image, and also features high lateral resolution by using two way dynamic focusing at all imaging depths. In this Paper, we consider the Problems in realization of synthetic zinc wave. Also. we have applied the scheme to obtain phantom and in-vivo images using a linear array of 5 MHz. In phantom test. experimental images show high resolution over a more extended imaging depth than conventional fixed Point transmit and receive dynamic focusing schemes In-vivo images show that the resolution could not overcome conventional focusing systems because of motion blurring and(or) aberration of tissue. but the frame rate tan be increased by a factor of more than 5 compared to conventional focusing schemes. with competitive resolution at all imaging depths .