• The Korean Journal of Ceramics
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• 제2권3호
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• pp.157-161
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• 1996

Cry structures of $Na_xWO_3$ (0.5$\leq$x$\leq$1.0) were investigated. Transmission electron microscopy (TEM) studies indicate that there is an ordering of sodium ions when x=0.75. The direction of ordering is [110] and the wavelength of ordering is twice of the interplanar distance of (110) plane. It has been confirmed that a superlattice containing eight $Na_{0.75}WO_3$ is the unit cell of ordered structure. In this unit cell, Na sites at (000) and ($\frac{2}{1}\frac{2}{1}\frac{2}{1}$) are vacant. The ordered phase was preserved after the annealing at $600^{\circ}C$ in the air. In reduced $Na_xWO_3$ with x=0.5 and 1.0, extra phases were found with the partially ordered perovskite phase. After annealing at $600^{\circ}C$, theses phases transformed to the phases found in calcined specimens.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.84-87
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• 2002

The Si$_{1-x}$ Gex/Si surface alloy (x = 0.3, 0.4 and 0.5), which are prepared by solid source MBE and have the SiGe epilayer thickness of 50$\AA$, are annealed with different parameters. The surface structure analyses of the heterostructure samples are made on a triple-axis X-ray diffractometer in grazing incidence X-ray diffraction (GIXRD) geometry. It has been found that with different annealing time (1.5h, 18h, 64h) and annealing temperature (550 $^{\circ}C$, 750 $^{\circ}C$), the SiGe epilayer experienced different strain relaxation process, which was deduced from the GIXRD measurements of the in-plane (220) diffraction peak of Si(001) substrate and the relevant (220) surface diffraction of SiGe epilayer. The results show that the stress relieving and the lateral strain relaxation in the SiGe/Si heterostructure can be promoted by correct annealing, which is very helpful for the preparation of SiGe/Si strained superlattice with fine strain crystallization..

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1239-1243
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• 1997

A phase analysis in the solid solution of (1-x) PbFe1/2Nb1/2O3-xPbCo1/2W1/2O3 is conducted by dielectric properties, heat capacity and E-P hysteresis at x=0.1 interval. Lattice constants and superlattice intensity are analyzed by the x-ray diffraction, and the temperature - composition phase diagram is determined. The system is found to form a solid solution of perovskite structure throughout the entire composition range, but the nature of phase transitions changes from ferroelectric-paraelectric for $0{\leq}x{\leq}0.5$ to antiferroelectric-paraelectric for $0.6{\leq}x{\leq}1.0$. The transitions of ferroelectric-paraelectric and antiferroelectric-paraelectric for $0.2{\leq}x{\leq}0.5$ and for $0.6{\leq}x{\leq}0.8$, respectively, are diffuse, while those of the ferroelectric-paraelectric and the antiferroelectric-paraelectric for $0.0{\leq}x{\leq}0.1$ and $0.9{\leq}x{\leq}1.0$, respectively are sharp.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.483-483
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• 2013

Latral Composition Modulation (LCM)으로 성장한 InP/GaP 초격자(Superlattice)의 선편광된 광발광(Photoluminescence) 특성을 저온(5 K)에서 측정하였다. LCM 기법은 z-축 방향으로 InP와 GaP를 단층 초격자(monolayer supperlattice)로 성장하는 과정에서 strain에 의해 x-y 평면으로 초격자가 형성되는 특별한 경우이다. 이렇게 성장된 LCM 초격자의 경우 In-rich 영역과 Ga-rich 영역이 교차로 성장되는 구조를 가지며 가전자대역(valence band)에서 무거운 양공과 가벼운 양공의 band mixing 이 일어나게 되어 선평광된 발광특성을 가진다. 우리는 저온 발광실험에서 In-rich 영역과 Ga-rich 영역의 재결합에 의해 나타나는 두 개의 독립된 전이 피크를 측정하였다. 이 두 피크는 [110] 방향의 편광에서 발광 강도가 최대치를 가지며 [1-10] 방향에서 최소값을 가짐을 보였다. 이때 전이 에너지의 경우 [110] 방향에서 [1-10] 방향으로 편광이 바뀔 때 Ga-rich 영역의 전이의 경우 적색편이를 나타낸 반면 In-rich 영역의 경우 청색편이를 보이는 현상을 발견하였다. 이러한 상반된 편이 현상은 서로 다른 3족 물질의 영역에 따라 격자 상수가 바뀌며 tensile strss와 compressive stress에 따른 가전자 대역의 band mixing 변화에 기인하는 것으로 여겨진다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2623-2627
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• 2011

We investigated the surface structure and wetting behavior of octaneselenolate self-assembled monolayers (SAMs) on Au(111) formed in a 50 ${\mu}M$ ethanol solution according to immersion time, using scanning tunneling microscopy (STM) and an automatic contact angle (CA) goniometer. Closely-packed, well-ordered alkanethiol SAMs would form as the immersion time increased; unexpectedly, however, we observed the structural transition of octaneselenolate SAMs from a molecular row phase with a long-range order to a disordered phase with a high density of vacancy islands (VIs). Molecularly resolved STM imaging revealed that the missing-row ordered phase of the SAMs could be assigned as a $(6{\times}{\surd}3)R30^{\circ}$ superlattice containing three molecules in the rectangular unit cell. In addition, CA measurements showed that the structural order and defect density of VIs are closely related to the wetting behaviors of octaneselenolate SAMs on gold. In this study, we clearly demonstrate that interactions between the headgroups and gold surfaces play an important role in determining the physical properties and surface structure of SAMs.

• 한국세라믹학회지
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• 제34권2호
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• pp.175-180
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• 1997

새로운 복합페로브스카이트계 고용체 (1-x)Ba(Mg1/3Ta2/3)O3-xLa(Mg2/3Ta1/3)O3(x=0.0-1.0)를 설계하고 조성에 따른 고용체의 결정구조의 변화 및 MPB(Morphotropic Phase Boundary)를 분말 XRD를 이용하여 분석하였다. 초격자회절선의 변화로부터 MBT에 10mol%의 LMT를 치환함에 따라 1:2에서 1:1로의 규칙화타입의 전이가 일어남을 알 수 있었다. 면심입방정구조 영역(0.10.8조성의 경우, 주회절선의 피이크분리 및 새로운 회절선들로부터 격자비틀림의 형태가 단사정임을 알 수 있었다.

• 열처리공학회지
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• 제9권2호
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• pp.79-90
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• 1996

Transmission electron microscopy(TEM) investigation on the phase decomposition of B2-ordered (Ni,Co)Al supersaturated with Ni and Co has revealed the precipitation of $(Ni,Co)_2Al$ which has not been expected from the reported equilibrium phase diagram. The $(Ni,Co)_2Al$ phase has a hexagonal struture and takes a rod-like shape with the long axis of the rod parallel to the <111> directions of the B2 matrix. By aging at temperatures below 873 K, a long period Superlattice Structure appears in the hexagonal $(Ni,Co)_2Al$ Phase. The orientation relationship between the $(Ni,Co)_2Al$ Precipitates and the B2-(Ni,Co)Al matrix is found to be$(0001)_p$ // $(111)_{B2}$ and $[\bar{1}2\bar{1}0]_P$ // $[\bar{1}10]_{B2}$, Where the suffix p and B2 denote the $(Ni,Co)_2Al$ precipitate and the B2-(Ni,Co)Al matrix, respectively. (Ni,Co)Al hardens appreciably by the fine precipitation of the $(Ni,Co)_2Al$ phase. Energy dispersive spectroscopy was used to analyze the compositions of each phase formed in B2-(Ni,Co)Al.

• 한국표면공학회지
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• 제29권6호
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• pp.753-759
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• 1996

The artificial construction of well-defined low-dimensional (low-D) quantum structures, such as quantum wire (QWR) still attracts attention of many researchers due to their applications in room-temperature optoelectronic devices. In this work, the migration enhanced epitaxial growth (MEE) and the analysis of InAs/ AlAs QWR are reported. On the vicinal semi-insulating InP substrate of $3^o$ tilted cut from (100) surface towards (010) direction, InAs/ AlAs QWR superlattices have been successfully grown by MEE with the introduction of growth interruption at each shutter operation of MBE cell. The in-situ RHEED analyses show that MEE gives superior step-flow growth (SFG) and sharper interface formation over a conventional MBE growth. We have grown 4 samples in series varying the growth temperature. The QWR samples are analyzed by photoluminescence (PL) and atomic force microscopy (AFM). From the AFM images, we can get the definitely resolved 1-D structures. This structure is believed to be due to the MEE method and its separation is better than any other data from others. We are now studying the dependence of the structure on the growth temperature.