• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.199-203
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• 2004

Superconducting B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin films were prepared by single target DC-magnetron sputtering. And, that was compared with the B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=1～3) thin film fabricated by using the ion beam sputtering. Phase intergrowth among n=2-3, 3-4 and 4-5 phases was observed. The molar fraction of each phase in the mixed crystal of the deposited films was determined by x-ray diffraction analyses and investigated as a function of $O_2$ gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. Also, the thin film surface observation was carried out by atomic force microscope. The images show the average particle size decreases, and the distribution density of particles on the film surface was to increase with lower gas pressures. The fabrication conditions for selective growth of the single n=2, 3 and 4 phases in BiSrC $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin film are discussed.e discussed.ussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.11-14
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• 2001

Phase intergrowth in BSCCO thin films has been Investigated. It turfed out from XRD analyses of these phases that molar fraction of each constituent phase in the intergrowth thin film can be exhibited as a function of substrate temperature and ozone pressure. Super- conducting behavior of the intergrowth thin aim Is also discussed.