• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.145-151
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• 2008

In this paper, a dual band microstrip antenna with similar radiation pattern for the satellite internet service is proposed. The proposed antenna has two Y-shaped slots on the microstrip patch that is fabricated on RO4003 substrate with a dielectric constant of 3.38 and a thickness of 0.508 mm, and operates in the 2 GHz and 5 GHz bands. The size of the antenna is $50\times47.5\times6.5\;mm^3$, and fed by coaxial cable. The measured bandwidths of the antenna are 2.398$\sim$2.507 GHz and 5.458$\sim$5.972 GHz for VSWR<2. The measured gains are 8.92 dBi and 7.74 dBi, respectively, for the lower and upper bands.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.777-782
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• 2015

In this paper, the compact CPW-fed antenna with triple folded patch for dual-band WLAN applications is proposed. As the conventional double inverted-L antenna is changed into the C-shaped patch and double inverted-L antenna, the antenna overcomes the narrow-band characteristics according to the miniaturization of the antenna. The proposed antenna with the size of only $16.5mm{\times}29.5mm{\times}1.0mm$ is designed and fabricated by optimized parameters to be operated at 2.4 GHz band and 5 GHz band. The antenna is fabricated into FR-4 substrate with thickness of 1.0 mm. We confirm that it is operated as antenna for WLAN applications by obtaining the measured return loss level of < -10 dB at dual-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1154-1160
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• 2010

In this paper, a novel printed meander monopole antenna is proposed for wireless USB dongle applications. Dual-wideband resonance is obtained by utilizing a printed meander monopole radiator. The proposed antenna was fabricated on a thin FR-4 substrate with a thickness of 1 mm and a dielectric constant of 4.6. The antenna is fed by a $50{\Omega}$ coaxial cable. This novel USB dongle antenna measures only $10{\times}50mm^2$. The measured results demonstrates that the antenna supports WiBro, Bluetooth/ISM, WLAN, S-DMB, and WiMAX service bands.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.10
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• pp.929-934
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• 2016

In this paper, we studied the design and fabrication of array antenna at around 1.8 GHz band. To improve of frequency properties of antenna, single feed microstrip patch antenna was simulated by HFSS(High Frequency Structure Simulator). A $1{\times}2$ array antenna of 1.8 GHz for LTE band was designed and fabricated by photolithography on an FR4 substrate (dielectric constant of 4.4 and thickness of 0.8 mm). The fabricated antenna was analyzed by network analyzer. The measured results agree well with the simulations, which confirmed the validity of this study. The fabricated $1{\times}2$ array antenna showed a center frequency, the minimum return loss and impedance were 1.82GHz, -30.5dB, and $49.6{\Omega}$ respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.3
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• pp.50-56
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• 2015

In this study, AISI M2 powder was selected primarily through various pieces of literature in order to improve the hardness and wear resistance. Among the laser metal deposition parameters, laser power was studied to improve the deposition efficiency in the laser metal deposition using a diode-pumped disk laser. An SKD61 hot work steel plate and AISI M2 powder were used as a substrate and powder for laser metal deposition, respectively. Experiments for the laser metal deposition were carried out by changing the laser power and track layer. The quality of the track surface and cross-section after applying the single-layer method was better than that obtained from applying the multi-layer method. As the laser power increased, the track thickness was increased, and the surface roughness deviation was decreased. In laser power condition of 1.6kW, the maximum hardness of the deposition track was 790Hv. This value was 40% better than the hardness of the SKD61 after heat treatment.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.1-7
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• 2003

We determined the optical constants of organic light emitting material of Alq$_3$ in a spectral range between 1.5 and 6 eV using the physical model introduced by Forouhi and Bloomer［Phys. Rev. B 34, pp. 7018-7026, 1986.］. The initial parameters of $A_i,\;B_i,\;C_i$ of Forouhi-Bloomer dispersion relations were determined from the absorption peaks and widths of absorption spectra of the Alq$_3$ film. The refractive index of substrate, a fused silica, is derived from the Sellmeier equation with the measured transmittance and reflectance spectra. Then, the complex refractive index and thickness of the Alq$_3$ film were calculated by use of a nonlinear least square fitting program with the Forouhi-Bloomer dispersion relation and the measured transmittance and reflectance spectra.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.101-109
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• 2004

This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the extended sacrificial bulk micromachining (extended SBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one mask. The fabricated accelerometer has the structure thickness of $30{\mu}m$, the vertical offset of $12{\mu}m$, and lateral gap between electrodes of $4{\mu}m$. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be $500{\mu}g$ and $748{\mu}g$. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18% FSO, respectively.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.111-120
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• 2000

Recently, metal oxide films such as MgO or ZrO$_2$ have been studied as buffer layers to fabricate the superconductor with preferred orientation and as diffusion barriers to prevent the reaction between superconductor and metal substrate. In this research, we focused fabrication and characterization of MgO and ZrO$_2$ films on textured metal substrates. We fabricated MgO and ZrO$_2$ films on the Ni metal sheets by sol-gel dipping method. The microstrcures of the films were investigated by SEM and AES analyses. The films were coated with different cycles and dryed at 400$^{\circ}$C and 500$^{\circ}$C . The final films were heat-treated at 700$^{\circ}$C, 800$^{\circ}$C, and 1000$^{\circ}$C, in air atmosphere. We investigated the alignment of MgO and ZrO$_2$ films on Ni metal sheets by XRD and pole figure. The grain growth of metal oxide films was improved by the increase of the drying temperature and annealing temperature. The grain growth was increased with the annealing temperature. The alignment of metal oxide films depended on the thickness.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.