• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.379-379
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• 2013

본 논문에서는 Normal ink jetting 공법으로 OTFT를 제작할 때 coffee stain effect에 의해서 반도체 소자의 특성이 저하되는 것을 극복하기 위해서 동일한 위치에 동일한 부피로 Droplet을 형성하는 Multiple ink jetting 공법을 통해 TIPS pentacene 결정의 Morphology와 전기적 특성이 어떻게 변화하는지 알아 보았다. Multiple ink jetting의 drop 횟수가 증가할수록 coffee stain effect에 의해서 형성된 가운데 영역의 Dendrite grain이 점점 작아지다가 7 Drops 이후로는 Big grain 만 남게 되었다. Active layer의 표면 Roughness는 drop 횟수가 증가할수록 낮아지다가 일정 count 이후로는 다시 높아지는 것을 확인할 수 있었다. 전계 이동도(mobility)는 drop 횟수가 증가할수록 커지다가 일정 count 이후로는 saturation되는 것을 확인할 수 있었다. Multiple ink jetting에 의해서 만들어진 OTFT 소자의 전계 이동도(mobility)는 1 drop과 10 drops에서 각각 0.0059, 0.036 cm2/Vs 로 6배 정도 차이가 있었다. 이것은 첫 drop에 의해 만들어진 가운데 Dendrite grain 영역이 Multiple ink jetting을 반복하면서 점점 작아지게 되어 사라지고 두꺼운 Grain 영역만 남게 된 것으로 판단된다. Vth 와 On/Off ratio는 1 drop과 10 drops에서 각각 -3 V, -2 V 그리고 $3.3{\times}10^3$, $1.0{\times}10^4$를 보였다. OTFT의 substrate로 Flexible한 polyethersulfone (PES) 기판을 사용하였고, 절연체로 Spin coating된 Poly-4-vinylphenol (PVP)가 사용되었으며, Gate 및 Source/Drain 전극은 Au를 50 nm 두께로 증착하였다. Channel의 width와 length는 각각 100 um, 40 um 였고, Gate 전극 위에 Active layer를 형성한 Bottom gate 구조로 제작되었다. Ink jet으로 제작된 TIPS pentacene의 결정성은 x-ray diffraction (XRD)와 광학 현미경으로 분석하였고 Thickness profile은 알파스텝 측정기를 이용하였으며, OTFT의 전기적 특성은 Keithley-4,200을 사용하여 측정하였다.

• Journal of Advanced Navigation Technology
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• v.20 no.5
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• pp.490-495
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• 2016

In the present study, a microstrip-fed monopole antenna is proposed for wireless local area network (WLAN) operations which cover dual band of 2.4 GHz (2.4 ~ 2.484 GHz) and 5 GHz (5.15 ~ 5.825 GHz). In order to obtain its compact structure and good omnidirectional radiation patterns, a modified inverted L-shaped slot separated from ground for impedance matching in 5 GHz band is etched on 2.4 GHz printed monopole antenna. The proposed antenna is designed and fabricated on a FR4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of $30{\times}45mm^2$. The measured impedance bandwidths (${\mid}S_{11}{\mid}{\leq}-10dB$) of fabricated antenna are 270 MHz (2.22 ~ 2.48 GHz) in 2.4 GHz band and 890 MHz (5.08 ~ 5.97 GHz) in 5 GHz band respectively. In particular, high gain of more than about 4 dBi and good omnidirectional radiation patterns have been observed over the entire frequency band of interest.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.2
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• pp.31-35
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• 2001

The anti-reflective anti-static(ARAS) optical film Was designed using conducting layer $TiN_x$ by Essential Macleod program. From this results, [air ${TiN_x{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The $TiN_x$ thin films were prepared on the glass substrate by RF(radio-freqency) magnetron sputtering apparatus from a Ti target in agaseous mixture of argon and nitrogen with the thickness of 7~10 nm. For the films obtained, the chemical binding energy of the films was investigated by x-ray photoelectron spectroscopy(XPS) in order to analyze the chemical nature and composition of the films. In addition, we investigated the relationship between the surface resistance and the chemical nature the sheet resistance and XPS depth profiling the chemical binding of the films.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.307-315
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• 2005

We have studied to obtain the SAW filter for the passband was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we performed computer-simulated by simulator. We can fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have performed to obtain the properly design conditions about phase shift of the SAW filter for WCDMA. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are 5000$\AA$ and 3.6$mu$m, respectively. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 8.2MHz. And we could obtain that return loss is less then 16dB, ripple characteristics is probably 4dB and triple transit echo is less then 18dB after when we have matched impedance.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.505-511
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• 2003

In this paper, a driving amplifier stage with 1 Watt output has been designed and fabricated, which is operating at UHF band( 470 ∼ 806 MHz) for digital TV repeater. In the driving amplifier stage, preamplifier and 1 Watt unit amplifier are integrated by one electric substrate which is 2.53 in dielectric constant and 0.8 mm thickness. When the driving amplifier stage is flown by bias voltage of 28 V DC and current of 900 mA. it has the gain of more than 53.5 dB. the gain flatness of $\pm$0.5 dB and return loss of less than -15 dB in 470 ∼ 806 MHz. Also, when two signals at 2 MHz frequency interval are input port into the driving amplifier stage with 1 Watt output, it resulted in excellent characteristics to designed specification with showing intermodulation distortion characteristics of more than 48 dBc.

• Journal of Microbiology and Biotechnology
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• v.17 no.11
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• pp.1826-1832
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• 2007

We describe the fabrication of poly(ethylene glycol) diacrylate (PEG-DA) hydrogel microstructures with a high aspect ratio and the use of hydrogel microstructures containing the enzyme ${\beta}$-galactosidase (${\beta}$-Gal) or glucose oxidase (GOx)/horseradish peroxidase (HRP) as biosensing components for the simultaneous detection of multiple analytes. The diameters of the hydrogel microstructures were almost the same at the top and at the bottom, indicating that no differential curing occurred through the thickness of the hydrogel microstructure. Using the hydrogel microstructures as microreactors, ${\beta}$-Gal or GOx/HRP was trapped in the hydrogel array, and the time-dependent fluorescence intensities of the hydrogel array were investigated to determine the dynamic uptake of substrates into the PEG-DA hydrogel. The time required to reach steady-state fluorescence by glucose diffusing into the hydrogel and its enzymatic reactions with GOx and HRP was half the time required for resorufin ${\beta}$-D-galactopyranoside (RGB) when used as the substrate for ${\beta}$-Gal. Spatially addressed hydrogel microarrays containing different enzymes were micropatterned for the simultaneous detection of multiple analytes, and glucose and RGB solutions were incubated as substrates. These results indicate that there was no cross-talk between the ${\beta}$-Gal-immobilizing hydrogel micropatches and the GOx/HRP-immobilizing micropatches.

• Journal of Advanced Navigation Technology
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• v.24 no.2
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• pp.142-147
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• 2020

In the present study, we proposed newly a CPW-fed miniaturized folded-slot antenna with open ended slot for WCDMA (1.92 ~ 2.17 GHz) band. Open-ended slots and asymmetric ground plane are used for a miniaturization of the antenna, and the proposed antenna was designed and fabricated on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 35×70 ㎟. The measured impedance bandwidths (|S₁₁| ≤ -10 dB) of fabricated antenna is about 400 MHz (1.86 ~ 2.26 GHz), which sufficiently satisfied interested band. Furthermore, the gain of antenna is 2 dBi and this antenna shows a similar radiation patterns of the dipole antenna. Therefore, it is expected to be used usefully in wireless and mobile communication device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.526-532
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• 2000

The paste on the glass or fabrication of the PDP(Plasma Display Panel) barrier rib was selectively etched using focused A $r_{+}$ laser(λ=514 nm) and Nd:YAG(λ=532, 266 nm) laser irradiation. The depth of the etched grooves increase with increasing a laser fluence and decreasing a laser beam scan speed. Using second harmonic of Nd:YAG laser(532 nm) the etching threshold laser fluence was 6.5 mJ/c $m^2$ for the sample of PDP barrier rib. The thickness of 180 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5J/c $m^2$beam scan speed of 20${\mu}{\textrm}{m}$ /s. In order to increase the etch rate of the barrier rib material barrier rib samples heated by a resistive heater during laser irradiation. The heated sample has many defects and becomes to be fragile. This imperfection of the structure compared to the sample without heat treatment allows the effective etching by the focused laser beam. The etch rates were 65${\mu}{\textrm}{m}$/s and 270 ${\mu}{\textrm}{m}$/s at room temperature and 20$0^{\circ}C$, respectively.y.