• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1301-1302
• /
• 2007

The multilayered $Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$/$Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_{3}/Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$[PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of the multilayered PZT thin films. All the multilayered PZT thin films showed dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization of the multilayered PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the multilayered PZT(10/20/10) thin film were 903, 1.01% and $25.60{\mu}C/cm^2$. This study suggests that the design of the multilayered PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.71-74
• /
• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.280-281
• /
• 2006

Cordierite 결정상을 LTCC공정 적용온도에서 소결하기 위한 glass 조성을 조사하였다. 상용의 glass중 Pb-B-Si-O계, Na-Zn-B-O계 glass를 선택하였고 LTCC용 기판소재로서의 가능성을 확인하기 위하여 저온 동시소성이 가능한 소결온도인 $850^{\circ}C$와 $1000^{\circ}C$ 사이에서 소재의 소결실험을 진행하였다. 소결조건에 따른 상변화, 유전특성을 확인한 결과 glass상, 결정상, 용융에 의한 glass상으로 상의 변화가 있음을 확인 할 수 있었으며, LTCC 소결 조건에서 Pb-B-Si-O계 glass의 경우 2.9~3.7의 낮은 유전율과 0.0027의 우수한 dielectric loss, 내전압 특성을 가지고 있음을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.648-651
• /
• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.809-812
• /
• 2004

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

• Advances in biomechanics and applications
• /
• v.1 no.1
• /
• pp.23-40
• /
• 2014

This paper examines the blood chamber of a left ventricular assist device (LVAD) under static loading conditions and standard operating temperatures. The LVAD's walls are made of a temperature-sensitive polymer (ChronoFlex C 55D) and are covered with a titanium nitride (TiN) nano-coating (deposited by laser ablation) to improve their haemocompatibility. A loss of cohesion may be observed near the coating-substrate boundary. Therefore, a micro-scale stress-strain analysis of the multilayered blood chamber was conducted with FE (finite element) code. The multi-scale model included a macro-model of the LVAD's blood chamber and a micro-model of the TiN coating. The theories of non-linear elasticity and elasto-plasticity were applied. The formulated problems were solved with a finite element method. The micro-scale problem was solved for a representative volume element (RVE). This micro-model accounted for the residual stress, a material model of the TiN coating, the stress results under loading pressures, the thickness of the TiN coating and the wave parameters of the TiN surface. The numerical results (displacements and strains) were experimentally validated using digital image correlation (DIC) during static blood pressure deformations. The maximum strain and stress were determined at static pressure steps in a macro-scale FE simulation. The strain and stress were also computed at the same loading conditions in a micro-scale FE simulation.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.4
• /
• pp.41-45
• /
• 2017

We have investigated the light extraction efficiency of large-area OLED lighting panels with a microlens array (MLA) or external scattering layer (ESL) by ray tracing simulation. The application of MLA and ESL to transparent OLEDs (TOLEDs) with an auxiliary metal electrode is also studied. It is found that MLA shows higher light extraction efficiency, compared with ESL. However, we have demonstrated that ESL is more suitable for TOLEDs having dual-sided equal light emission. Namely, equal light emission from the front and rear surfaces of TOLED can be achieved by increasing the scattering particle density of ESL. To compensate for a loss in light emission induced by auxiliary metal electrode, we come out with an OLED structure partially covered with MLA at the outer surface of glass substrate, which is aligned with metal electrode. With this scheme, it is observed that the light extraction efficiency can be boosted more than 20% from opaque OLED and 50% from transparent OLED.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.39-44
• /
• 2022

The light extraction technology for improving the light efficiency of OLEDs is the core technology for extracting the light inside the OLEDs to the outside. This study demonstrates a simple method to generate random nanostructures (RNSs) containing high refractive index nanoparticles to improve light extraction and viewing angle characteristics. A simple dry low-temperature process makes the nanostructured scattering layer on the polymer resin widely used in the industry. The scattering layer has the shape of randomly distributed nanorods. To control optical properties, we focused on changing the shape and density of RNSs and adjusting the concentration of high refractive index nanoparticles. As a result, the film of the present invention exhibits a perpendicular transmittance of 85% at a wavelength of 550 nm. This film was used as a scattering layer to reduce substrate mode loss and improve EL efficiency in OLEDs.

• Proceedings of the Korean Society of Applied Pharmacology
• /
• 1995.04a
• /
• pp.74-74
• /
• 1995

GABA transaminase is inactivated by preincubation with p$^1$, p$^2$-bis(5'-pyridoxal) diphosphate at pH 7.0. The inactivation under pseudo-first order conditions proceeds at a slow rate (K$\_$obs/=0.035 min$\^$-1/). The degree of labeling of the enzyme by p$^1$, p$^2$-bis(5'-pyridoxal) diphosphate was determined by absorption spectroscopy, The blocking of 2 lysyl residues/dimer is needed for inactivation of the transaminase. The time course of the reaction is significantly affected by the substrate ${\alpha}$-ketoglutarate, which afforded complete protection against the loss of the catalytic activity. Whereas cofator pyridoxal phosphate failed to prevent the inactivation of the enzyme. Therefore, it is postulated that binding of ${\alpha}$-ketoglutarate tn lysyl residues is the major factor contributing to stabilization of the catalytic site and bifuctional reagent p$^1$, p$^2$bis(5'-pyridoxal) diphosphate blocks lysyl residues other than those involved in the binding of the cofactor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.10
• /
• pp.885-894
• /
• 2015

In this paper, it can be applied to a walkie-talkie, the RFID / USN 920 MHz band(917~923.5 MHz) and WiFi 2.4GHz band(2.4~2.483 5GHz) return loss is 10 dB over the band, on-board dual band with omni-directional radiation characteristics is proposed. The basic structure designed antenna is used meander monopole antenna. It was used as double stubs and tabs for antenna designs that meet the criteria proposed. The double stub and the tab affects the reactance of the antenna to form a common-mode and differential-mode in the stub to improve the antenna characteristics and return loss in the bandwidth, gain and radiation characteristics. The system size of walkie-talkie is $52{\times}77mm^2$, the size of the antenna is limited to $52{\times}15mm^2$, the thickness of FR4 dielectric substrate is 0.8 mm, FR4 dielectric constant 4.4 is used. For experimental results, the return loss is measured more than 10 dB, the maximum gain is measured 1.95 dB, the maximum bandwidth is measured 360 MHz, the radiation characteristic is measured omni-directional. By a walkie-talkie terminal design applying the results of the paper, the handset's price competitiveness and production efficiency can be improved.