• Title/Summary/Keyword: Substrate loss

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The Effect of Substrate Temperature on the Electrical, Electronic, Optical Properties and the Local Structure of Transparent Nickel Oxide Thin Films

  • Lee, Kangil;Kim, Beomsik;Kim, Juhwan;Park, Soojeong;Lee, Sunyoung;Denny, Yus Rama;Kang, Hee Jae;Yang, Dong-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.397-397
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    • 2013
  • The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

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Mutational Analysis of Thermus caldophilus GK24 ${\beta}$-Glycosidase: Role of His119 in Substrate Binding and Enzyme Activity

  • Oh, Eun-Joo;Lee, Yoon-Jin;Choi, Jeong-Jin;Seo, Moo-Seok;Lee, Mi-Sun;Kim, Gun-A;Kwon, Suk-Tae
    • Journal of Microbiology and Biotechnology
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    • v.18 no.2
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    • pp.287-294
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    • 2008
  • Three amino acid residues (His119, Glu164, and Glu338) in the active site of Thermus caldophilus GK24 ${\beta}$-glycosidase (Tca ${\beta}$-glycosidase), a family 1 glycosyl hydrolase, were mutated by site-directed mutagenesis. To verify the key catalytic residues, Glu164 and Glu338 were changed to Gly and Gln, respectively. The E164G mutation resulted in drastic reductions of both ${\beta}$-galactosidase and ${\beta}$-glucosidase activities, and the E338Q mutation caused complete loss of activity, confirming that the two residues are essential for the reaction process of glycosidic linkage hydrolysis. To investigate the role of His119 in substrate binding and enzyme activity, the residue was substituted with Gly. The H119G mutant showed 53-fold reduced activity on 5mM p-nitrophenyl ${\beta}$-D-galactopyranoside, when compared with the wild type; however, both the wild-type and mutant enzymes showed similar activity on 5mM p-nitrophenyl ${\beta}$-D-glucopyranoside at $75^{\circ}C$. Kinetic analysis with p-nitrophenyl ${\beta}$-D-galactopyranoside revealed that the $k_{cat}$ value of the H119G mutant was 76.3-fold lower than that of the wild type, but the $K_m$ of the mutant was 15.3-fold higher than that of the wild type owing to the much lower affinity of the mutant. Thus, the catalytic efficiency $(k_{cat}/K_m)$ of the mutant decreased to 0.08% to that of the wild type. The $k_{cat}$ value of the H119G mutant for p-nitrophenyl ${\beta}$-D-glucopyranoside was 5.l-fold higher than that of the wild type, but the catalytic efficiency of the mutant was 2.5% of that of the wild type. The H119G mutation gave rise to changes in optima pH (from 5.5-6.5 to 5.5) and temperature (from $90^{\circ}C\;to\;80-85^{\circ}C$). This difference of temperature optima originated in the decrease of H119G's thermostability. These results indicate that His119 is a crucial residue in ${\beta}$-galactosidase and ${\beta}$-glucosidase activities and also influences the enzyme's substrate binding affinity and thermostability.

A Study on the Properties of the PVDF Thin Film Prepared by Vacuum Deposition with Varying the Deposition Condition (진공증착법으로 제작한 PVDF 박막의 증착 조건에 따른 특성변화에 관한 연구)

  • 장동훈;강성준;윤영섭
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.8
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    • pp.565-571
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    • 2003
  • We prepare the PVDF thin film using vacuum deposition method with the application of voltage and obtain the optimum deposition condition for $\beta$-PVDF thin film on the basis of the results of FT-IR, crystallinity of $\beta$ phase, surface roughness studies with varying the condition. The phase of PVDF thin film is analyzed by the FT-IR spectrum. When the substrate temperature and applied voltage increase from 3$0^{\circ}C$ to 9$0^{\circ}C$ and from 0kV to 9kV, respectively, the crystallinity of $\beta$ phase is introduced as large as 64%. It means that the substrate temperature and applied voltage allow the phase transition of $\beta$ phase to occur more easily. Also, the surface roughness of PVDF thin film decreases from 65.1nm to 36.6nm with the increase of substrate temperature. In results, we obtain the optimum deposition conditions for $\beta$-PVDF thin film from these experimental results and measure the Properties of the $\beta$-PVDF film deposited in the optimum condition. The dielectric properties such as dielectric constant and loss tangent decrease from 2.34 to 0.44 and from 0.27 to 0.04 with the increase of frequency, respectively.

Influence of Nutritional Supplementation to the Substrate on Vegetative and Reproductive Growth of Winter Mushroom, Flammulina velutipes (Curt. ex Fr.) Sing. and Chemical Changes of the substrates Produced during Growth of the Fungus (톱밥 배지(培地)에 대(對)한 영양첨가(營養添加)가 팽이버섯의 생장(生長)및 배지(培地)의 화학적(化學的) 성분(成分) 변화(變化)에 미치는 영향(影響))

  • Chang, Hak-Gil
    • The Korean Journal of Mycology
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    • v.4 no.1
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    • pp.31-44
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    • 1976
  • The studies were carried out to examine the effects of supplementation of nutritional substances and physical conditions in substrate on the mycelial growth and yield of fresh sporophores of winter mushroom, Flammulina velutipes(Curt. ex Fr.) Sing. and to obtain further informations on the nutritional requirements of the fungus with reference to improvement of substrate through [analysis of chemical composition of the substrates during the cultivation period. The results obtained are summarized as follows: 1. The best yield of fresh sporophores, 84.4 g per 280 g substrate in a bottle, was obtained from the mixture of poplar sawdust 10 and rice bran 3 by volume when Flammulina velutipes was cultivated on the poplar sawdust supplemented by rice bran, wheat bran, cattle manure and various combinations of these materials as nutrient sources. The substrates of poplar sawdust 10 plus rice bran 3 and 2 or wheat bran 3 with a higher yield of fresh sporophores showed a comparatively higher content of total nitrogen. total sugar, and potassium. 2. The mycelial growth of the fungus was compared on the substrates of poplar sawdust supplemented by the several nutrient sources and poplar sawdust alone. The fastest linear growth occurred on substrates of poplar sawdust alone and poplar sawdust plus cattle manure deficient in sugar and nitrogen sources, but mycelial density was more sparse on the substrates. Also, growth in a solution extracted from these substrates was very meager. 3. In the substrates which varied with bulk density and moisture content optimum bulk density and moisture content for mycelial growth was 0.2g/cc and 72% on a dry weight basis, respectively, but the highest yield of fresh sporophores was obtained at the bulk density of 0.3g/cc and moisture content of 67%. 4. By increasing the ratio of rice bran in poplar sawdust the loss of total weight and ash, content at each stage was increased, and during the cultivation period of 75 days, loss of total weight of the substrates at inoculation was 17.8 to 28.8% and ash content increased about 12%. 5. 11 to 14% of the cellulose and 3 to 4% of the lignin content per original substrate were decreased without a great difference depending of the mixing ratio of rice bran. The soluble glucose concentration in the substrates was increased during the same period. 6. In the process of vegetative and reproductive growth of the fungus upon the substrates, the total nitrogen was increased in quantity per dry weight of sample but was reduced in absolute quantity to a minute extent. There is no great changes in content of organic nitrogen including amino acid nitrogen, and hydrolysable ammonium nitrogen during the vegetative growth period, but occurrence of sporophores resulted in a decrease in the nitrogen content of these forms. On the one hand, by an increase of additive amounts of rice bran, nitrogen contents of these forms were higher and the reduction range during the reproductive growth period became wider. 7. Mycelial growth of the fungus was accelerated in various liquid media supplemented with organic nitrogen sources such as peptone and yeast extract in comparison with addition of inorganic nitrogen sources. Furthermore, mycelial growth was mere vigorous in the media with higher content of organic nitrogen sources.

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Preparation and Dielectric properties of the Pb(Zr,Ti)$O_3$ Thin Film by Sol-Gel Method (Sol-Gel법에 의한 Pb(Zr,Ti)$O_3$ 박막의 제조 및 유전 특성)

  • Chung, Jang-Ho;Park, In-Gil;Ryu, Ki-Won;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1022-1024
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    • 1995
  • In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

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L-Slot Microstrip Patch Antenna Design for LTE (LTE용 L형 슬롯 마이크로스트립 패치 안테나 설계)

  • Kwon, Jin-Young;Kim, Gab-Gi
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.13 no.3
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    • pp.171-175
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    • 2013
  • In this paper was The dielectric constant of 4.4 and thickness of 0.6mm FR-4 substrate were implanted including the L-Slot in microstrip patch antenna to design a microstrip patch antenna for LTE. The proposed antenna is $180{\times}180$ compact and $46{\times}36$ lightweight compared to existing antenna and This antenna can be used as transmission ommidirectional radiation pattern of propagation was compared to the input return loss than -10dB (VSWR 2:1) to allow communication from the resonant frequency band.

Design and Fabrication of Array antenna in the WLAN Band (무선랜 대역의 배열 안테나 설계 및 제작)

  • Park, Yong-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.2
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    • pp.779-783
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    • 2012
  • In this paper, we studied the design and fabrication of $2{\times}2$ array-type microstrip patch antenna to be used in wireless communication systems operating at around 5GHz band. To obtain wide bandwidth and high gain, antenna parameters such as patch size, inter patch space are simulated by HFSS(High Frequency Structure Simulator). From these parameters, the $2{\times}2$ array-type microstrip patch antenna is fabricated using FR-4 substrate. The measured results of the antenna are as follows: The center frequency of 5.06GHz, insertion loss of -44dB, bandwidth of 200MHz, and VWSR of 1.1.

The Characteristic of L-shape and Triangular Slot Antenna

  • Narkcharoen, K.;Charkrit, P.;Anantrasirichai, N.;Wakabayashi, T.
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1680-1683
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    • 2003
  • To describe the performance of an antenna, some parameters are necessary. Some of the parameters are interrelate and not all of them must be specified for complete description of antenna performance. The parameters in characteristics of printed antenna for this analysis are radiation pattern, input impedance, VSWR, S parameter and electromagnetic field. In this paper we will consider two shaped of slot antennas one is triangular slot antenna and other is L - shape slot antenna for compare the radiation pattern, return loss, and VSWR. Two slot antennas are designed to have a resonant frequency at 10 GHz. The microstrip line is designed to be 50 ohms in order to match the measurement system, it has the substrate of the thickness = 1.52 mm and dielectric constant (${\varepsilon}_r$) 2.17. The problem space in the FDTD analysis are $60{\times}123{\times}100$ cells for L-shape slot antenna and $50{\times}171{\times}120$ cells for triangular slot antenna with the cell dimensions ${\Delta}x=0.152\;mm.$, ${\Delta}y={\Delta}z=0.15\;mm.$

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Electrical Characterization of BGA interconnection for RF packaging (Radio Frequency 회로 모듈 BGA 패키지)

  • Kim, Dong-Young;Woo, Sang-Hyun;Choi, Soon-Shin;Jee, Yong
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.96-99
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    • 2000
  • We presents a BGA(Ball Grid Array) package for RF circuit modules and extracted its electrical parameters. We constructed a BGA package of ITS(Intelligent Transportation System) RF module and examined electrical parameters with a HP5475A TDR(Time Domain Reflectometry) equipment and compared its electrical parasitic parameters with PCB RF circuits. With a BGA substrate of 3 $\times$ 3 input and output terminals, we have found that self capacitance of BGA solder ball is 68.6fF, self inductance 146pH, mutual capacitance 10.9fF and mutual inductance 16.9pH. S parameter measurement with a HP4396B Network Analyzer showed the resonance frequency of 1.55㎓ and the loss of 0.26dB. Thus, we may improve electrical performance when we use BGA package structures in the design of RF circuit modules.

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Characterization of BST films for high tunable thin film capacitor

  • No, Ji-Hyeong;Song, Sang-U;Kim, Ji-Hong;Go, Jung-Hyeok;Mun, Byeong-Mu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.179-179
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    • 2009
  • This is for the electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST materials had been chosen for high frequency applications due to it's high permitivity and tunability. The BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700\;^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1 hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function of electric field ($\pm40$ KV/cm) at room temperature using inter-digital Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the 10 pairs finger was the best capacitance onto $Al_2O_3$ substrate. The capacitance was 0.9pF. Also Dielectric constant was been 351 at 100 mTorr and annealing temperature $750^{\circ}C$ for 1 hour. The loss tangent was been 0.00531.

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