• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.71-76
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• 2004

A compact embedded tapped-line combline filter with interdigital capacitors using low temperature co-fired ceramic (LTCC) technology for wireless application is proposed. Also, in-situ measurement using T-pattern microstrip resonator was performed to acquire exact knowledge of electrical properties of the LTCC substrate. The proposed filter makes it possible to realize a relatively small size, 2.7mm${\times}$2.03mm. by employing interdigital and combline structure. It shows 1.8 ㏈ insertion loss, 37.6㏈ return loss, and 280 MHz bandwidth at the center frequency of 5.09 GHz. Its small size and simple structure make it a good candidate as an integrated filter for various LTCC substrates.

• 유체기계공업학회:학술대회논문집
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• 2000.12a
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• pp.359-365
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• 2000

Port facilities and marine structures used in marine environment were encountered to corrosion damages because of the influence of $Cl^-$. Generally, to protect these accidents, mainly applied anti-corrosion paint and epoxy coating. But it was still remained erosion-corrosion damage such as impingement erosion, cavitation erosion, deposit attack. There was needs to develope the new coating materials to protective those corrosion damages. This paper, polyester glass flake, vinylester glass flake lining and epoxy coating for SS were investigated electrochemical tests and cavitation erosion test for corrosion behaviour under sea water. The main results obtained are as follows, 1) Surface of epoxy coating appear erosion pin hole but surface of polyester glass flake and vinylester glass flake lining do not appear erosion pin hole after impingement-cavitation erosion test in sea water. 2) Weight loss of polyester glass flake and vinylester glass flake lining do not occur after impingement-cavitation erosion test in sea water. 3) Corrosion current density of polyester glass flake lining less drained than epoxy coating and substrate under corrosion potential.. 4) Corrosion current density of vinylester glass flake lining with three coating less drained than that of polyester glass flake lining with two coating.

• Progress in Superconductivity
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• v.2 no.1
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• pp.51-55
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• 2000

A $Y_1Ba_2Cu_3O_{7-\delta}$ square spiral microstrip antenna (YBCO antenna) was epitaxially grown on a $LaAlO_3$ substrate by laser ablation. Also fabricated was a gold square spiral microstrip antenna (gold antenna) having the same structure as that of the YBCO antenna in order to compare the properties of both antennas. Both the YBCO antenna and the gold antenna were operated in Ku (12-18 GHz) band, and their properties such as the return loss, SWR, power gain, and radiation patterns were investigated at 77 K. The return loss below -10 dB was obtained in two frequency ranges, i.e., 14.05-14.90 GHz, and 16-18 GHz for the YBCO antenna at 77 K (YBCO superconducting antenna), and in the frequency range of 15.05-17.60 GHz for the gold antenna at 77 K. The SWR bandwidths are 0.85 GHz and 2 GHz for the YBCO superconducting antenna, and 2.55 GHz for the gold antenna at 77 K. The gain improvement of the superconducting YBCO antenna over the gold antenna at 77 K was about 10 dB in the frequency range of 16 GHz to 18 GHz. The radiation patterns show the YBCO superconducting antenna has the omni-directional property of a spiral antenna.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.41-47
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• 2011

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.291-293
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• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].