• Microbiology and Biotechnology Letters
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• v.13 no.4
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• pp.355-359
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• 1985

The purified $\beta$-galactosidase from L. sporogenes was most active at pH 7.0 and 6$0^{\circ}C$ with O-nitrophenyl-$\beta$-D-galactopyranoside (ONPG) in 0.05 M phosphate buffer. It was stable over a pH range from 5.0 to 9.0 and lost less than 10％ of its activity after heating for 30 minutes at 6$0^{\circ}C$ and pH 7.0. All the mineral ions examined in this work showed no significant activating effect, whereas L-cysteine exerted a great stimnlatory effect on the enzyme activity at the concentration of 10 mM. The Km values were 1.2 mM for ONPG and 33.3 mM for lactose. Approximately 85％ of lactose in cow's milk, in 10％ skim milk and in 5％ lactose solution was hydrolyzed after 4 hours incubation at 6$0^{\circ}C$ with 2 units of the purified $\beta$-galactosidase per $m\ell$ of the substrate solutions. The $\beta$-galactosidase from L. sporogenes, therefore, is considered to be suitable for hydrolysis of lactose in milk and other dairy products.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.93-99
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• 2016

In this paper, we investigated the mechanical and electrical reliability of silver nanowire (AgNW) films. In particular, the durability and reliability of AgNW films were studied when the AgNW film was subjected to the bending deformation under current flow. The electrical durability of AgNW was evaluated by observing changes in heat generation and current density occurring in AgNW through voltage and current tests. The AgNW film showed a constant resistance change up to a bending radius of 2 mm and 200,000 cycles in the bending fatigue tests. The over-coating layer has an effect of improving the durability of the AgNW film. In the case of AgNW with the over-coating layer, heat was uniformly dissipated on the surface of AgNW film, whereas in the case of AgNW film without the over-coating layer, heat was generated locally. In the bending test under the current flow, the current density of the AgNW film was continuously decreased up to 52.4%. During bending, the AgNW was deformed due to mechanical deformation such as tensile, bending and sliding of the AgNW, consequently contact resistance of the AgNW was increased, leading to a electrical breakdown of AgNW by Joule heating. It was found that the application of the over-coating layer can improve the electrical and mechanical reliability of the AgNW film.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.361-368
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• 2004

We separated the multilayer structure of CD-R(compact disk-recordable) and investigated optimal spot marking conditions and physical and chemical transitions in response to various laser beam energh levels. Spot marking(80 ${\mu}{\textrm}{m}$ spot size) was produced on the surface of each layer using a Q-switched Nd:YAG laser between 27 mJ and 373mJ. By investigating resulting pit formation with Optical Microscopy(OM) and Optical Coherence Tomography(OCT), we analyzed the formation process of spot marking in the multilayer structure of different chemical composition. The localized heating of the substrate in the multilayer thin film caused the short temporal thermal expansion, and absorbed optical energy between reflective and dye interfaces melted dye and increased the volume. During the cooling phase, formation of pit and surrounding rim can be explained by three distinct processes; effect of surface tension, evaporation by spontaneous temperature increase due to laser energy, and mass flow from the recoil pressure. Our results shows that the spot marking formation process in the multilayer thin film is closely related to the layers' physical, chemical, and optical properties, such as surface tension, melt viscosity, layer thickness, and chemical composition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of Bio-Environment Control
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• v.20 no.2
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• pp.116-122
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• 2011

This study was carried out to investigate the effects of several cooling methods such as water hose cooling, mist, fog and control on growth and microclimate, and to develop a simple nutriculture bed for production of fresh leaves of narrowhead goldenaray 'Ligularia stenocephala'. When the root-zone was cooled with 240 L/hr flow rate of $13^{\circ}C$ ground water using water hose, the temperature was lowered approximately by 2 to $3^{\circ}C$ than that of control. The growth of narrowhead goldenaray were favorable in the water hose cooling compared with the other cooling methods. Nutrient culture system having part cooling effect around plant canopy was developed. The system was composed of 15 cm diameter of water hose on side wall of beds, cooling hose, and expanded rice hull media as organic substrate. When cool water which the temperature changed in the range of 14 to $22^{\circ}C$ diurnally with 240 L/hr of flow rate through water hose, the air temperature around canopy and root-zone temperature were dropped by $0.5^{\circ}C$ and $3^{\circ}C$ compared with that of conventional styrofoam bed, respectively. These results showed that newly devised bed system using water hose was simple and economical for the production of high quality narrowhead goldenaray leaves. This system might be practically used both at summer and winter season for the cultivation of narrow head goldenaray by part cooling or heating around root-zone and plant canopy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.