• 제목/요약/키워드: Structural Film

검색결과 1,470건 처리시간 0.043초

Buckling of an elastic plate due to surface-attached thin films with intrinsic stresses

  • Zhu, J.;Yang, J.S.;Ru, C.Q.
    • Structural Engineering and Mechanics
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    • 제52권1호
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    • pp.89-95
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    • 2014
  • We analyze the buckling of a thin elastic plate due to intrinsic stresses in thin films attached to the surfaces of the plate. In the case of cylindrical buckling, it is shown that for a plate with clamped edges compressive intrinsic film stresses can cause flexural buckling of the plate, while tensile intrinsic film stresses cannot. For a plate with free edges, film intrinsic stresses, compressive or tensile, cannot cause buckling.

New Dynamic Logic Gate Design Method for Improved TFT Circuit Performance

  • Jeong, Ju-Young;Kim, Jae-Geun
    • Journal of Information Display
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    • 제6권1호
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    • pp.17-21
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    • 2005
  • We explored a new way of designing dynamic logic gates with low temperature polysilicon thin film transistors to increase the speed. The proposed architecture of logic gates utilizes the structural advantage of smaller junction capacitance of thin film transistors. This method effectively blocks leakage of current through the thin film transistors. Furthermore, the number of transistors used in logic gates is reduced thereby reducing power consumption and chip area. Through HSPICE .simulation, it is confirmed that the circuit speed is also improved in all logic gates designed.

Flexible 기판을 이용한 AZO 박막제작 (Preparation of AZO thin film on the flexible substrate)

  • 조범진;금민종;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.281-282
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    • 2005
  • The AZO thin film was prepared on flexible substrate by Facing Targets Sputtering method. The substrate used the Polycarbonate(PC), thickness 200$\mu$m. In particular, the AZO thin film was prepared at room temperature because the substrate is weak in heat. The structural, electrical, optical properties of the AZO thin film were investigated and the surface was observed by microscope.

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Low Temperature Cure Film Adhesive

  • Liang, Bin;Zhao, Shenglong
    • 접착 및 계면
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    • 제5권2호
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    • pp.1-7
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    • 2004
  • A novel carboxyl terminated butadiene-acrylonitrile (CTBN) modified, low temperature cure epoxy film adhesive was developed in this paper. It can be cured at as low as $75^{\circ}C$ for 4 hours with a pressure of 0.1MPa. After post cure at $120^{\circ}C$ for 2 hours, the bonding strengths of Phosphoric Acid Anodizing(PAA) surface treated aluminum adherend were similar to those of structural film adhesives curing at $120^{\circ}C$. It is suitable to bond both metal/composite laminate-to-laminate and laminate to honeycomb structure.

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Voltammetric Behaviors of Chemically Modified Electrodes Based on Zirconium Phosphonate Film

  • 홍훈기
    • Bulletin of the Korean Chemical Society
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    • 제16권9호
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    • pp.886-891
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    • 1995
  • Electroactive monolayers based on zirconium(Ⅳ) phosphonate film were prepared on gold and tin oxide electrodes by sequential layer-by-layer depostion technique. High transfer coefficient values and surface coverages of surface bound redox molecules were obtained from the electrochemical measurements of heterogeneous electron transfer rates for monolayer modified electrodes. 1,10-Decanediylbis(phosphonic acid) (DBPA) monolayer as insulating barrier was effective in blocking electron transfer. However, these film modified oxide electrode shows voltammetric behavior of diffusion/permeation process taking place at very small exposed area of modified electrode through channels due to structural defects within film when a very fast redox couple such as Ru(NH3)63+ is hired.

$CaO-P_2O_5-SiO_2$계 유리의 생체활성 (Bioactivity of $CaO-P_2O_5-SiO_2$ Glasses)

  • 조정식;김철영
    • 한국세라믹학회지
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    • 제30권6호
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    • pp.433-440
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    • 1993
  • The bioactivity of glasses in the CaO-SiO2 system and CaO-P2O5-SiO2 system with less than 10mol% of P2O5 was investigated by in vitro test in simulated body flood(SBF). The formation of Ca.P film and hydroxyapatite on the surface of glasses after in vitro test was analysed by X-ray photoelectron spectoscopy (XPS), fourier transform infrared reflection spectroscopy (FT-IRRS), energy dispersive X-ray spectroscopy (EDS), and scanning electron microscopy (SEM) observation. In the early stage of Ca.P film formation after in vitro test for CaO-SiO2 and CaO-P2O5-SiO2 glasses, the rate of Ca.P film formation on the surface of the glasses was dependent of structural parameter (Y) evaluated from the glass composition. First, in the case of the glasses having Y value below 2, Ca.P film and SiO2-rich layer were formed simultaneously, and there were no differences of the rate of Ca.P film formation in terms of the Y values. Second, in the case of the glasses having Y value above 2, the SiO2-rich layer was formed, and then Ca.P.Si mixed layer was formed in the silica gel structure of the SiO2-rich layer, and finally the Ca.P film on the surface of SiO2-rich layer. The rate of Ca.P film formation delayed as the Y values increased. The rate of hydroxyapatite formation of glasses (the rate of transformation from Ca.P film to hydroxyapatite) seems to be propotional to the rate of Ca.P film formation and Y value. The rate of hydroxyapatite formation of glasses belonging to the second group was delayed as structural parameter increased, and the hydroxyapatite crystal showed spherical growth in the early reaction stage, and then showed silkworm-like linear growth as the reaction time increased.

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Electrical Properties of ZnO:Al Transparent Conducting Thin Films for Film-Typed Dye Sensitized Solar Cell

  • Kwak, Dong-Joo
    • 조명전기설비학회논문지
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    • 제22권11호
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    • pp.36-43
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    • 2008
  • In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].