• 동굴
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• 제82호
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.13-19
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• 2008

A Wire-woven Bulk Kagome (WBK) is the new truss type cellular metal fabricated by assembling the helical wires in six directions. The WBK seems to be promising with respect to morphology, fabrication cost, and raw materials. In this paper, first, the geometric and material properties are defined as the main design parameters of the WBK considering the fact that the failure of WBK is caused by buckling of truss elements. Taguchi approach was used as statistical design of experiment(DOE) technique for optimizing the design parameters in terms of maximizing the compressive strength. Normalized specific strength is constant regardless of slenderness ratio even if material properties changed, while it increases gradually as the strainhardening coefficient decreases. Compressive strength of WBK dominantly depends on the slenderness ratio rather than one of the wire diameter, the strut length. Specifically the failure of WBK under compression by elastic buckling of struts mainly depended on the slenderness ratio and elastic modulus. However the failure of WBK by plastic failed marginally depended on the slenderness ratio, yield stress, hardening and filler metal area.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2005년도 춘계학술대회논문집
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• pp.372-378
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• 2005

Finite element analysis of concrete slab system in apartment building was executed using the tables of orthogonal arrays, and optimal design process was proposed. At first, experimental results show that sound peak components to influence the overall level and the rating of floor impact sound insulation were coincident with natural frequencies of the reinforced concrete slab. Finite element model of concrete slab was compared with experimental results, and well corresponded with an error of less than 10%. The tables of orthogonal arrays were used for finite element analysis with 8 factors. 3 related to material properties and 5 related to slab shape parameters and its results were analyzed by statistical method, ANOVA. The most effective factor among them was slab thickness, and main effect factor from slab shape parameters was different from each natural frequency. The interaction was found in the higher mode over $3^{rd}$ natural frequency. From main effect plot and interaction plot, the optimal design factor to increase the natural frequency was determined.

• 한국정밀공학회지
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• 제34권3호
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• pp.167-172
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• 2017

This study proposes a method for identifying correlations between tension and drop height for sessile droplets in a roll-to-roll processing system. The effect of tension and drop height on the contact angle of a sessile droplet is presented. Design of experiment (DOE) methodology and statistical analysis are used to define a correlation between the process parameters. The contact angle is decreased while increasing tension and drop height. The influence of the tension is less significant on the contact angle compared with the effect of the drop height. However, tension should be considered as a major parameter because it is not easy to fix with roll eccentricity and compensating speed of the driven roll. The results of this study show that the effect of tension on the contact angle of a sessile droplet is more important than drop height because the drop height is fixed when the process systems are determined.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.464-464
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• 2010

A few years ago, for maintaining high stability and production yield of production equipment in a semiconductor fab, on-line monitoring of wafers is required, so that semiconductor manufacturers are investigating a software based process controlling scheme known as virtual metrology (VM). As semiconductor technology develops, the cost of fabrication tool/facility has reached its budget limit, and reducing metrology cost can obviously help to keep semiconductor manufacturing cost. By virtue of prediction, VM enables wafer-level control (or even down to site level), reduces within-lot variability, and increases process capability, $C_{pk}$. In this research, we have practiced VM on $SiO_2$ etch rate with optical emission spectroscopy(OES) data acquired in-situ while the process parameters are simultaneously correlated. To build process model of $SiO_2$ via, we first performed a series of etch runs according to the statistically designed experiment, called design of experiments (DOE). OES data are automatically logged with etch rate, and some OES spectra that correlated with $SiO_2$ etch rate is selected. Once the feature of OES data is selected, the preprocessed OES spectra is then used for in-situ sensor based VM modeling. ICP-RIE using 葰.56MHz, manufactured by Plasmart, Ltd. is employed in this experiment, and single fiber-optic attached for in-situ OES data acquisition. Before applying statistical feature selection, empirical feature selection of OES data is initially performed in order not to fall in a statistical misleading, which causes from random noise or large variation of insignificantly correlated responses with process itself. The accuracy of the proposed VM is still need to be developed in order to successfully replace the existing metrology, but it is no doubt that VM can support engineering decision of "go or not go" in the consecutive processing step.

• 한국지반환경공학회 논문집
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• 제13권6호
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• pp.51-57
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• 2012

본 연구는 E-beam 공정을 통한 triclosan의 광분해에 대하여 조사하였다. 공정의 최적화는 실험계획법에 의한 회분식 실험을 통해 수행되었다. 실험계획법은 통계적 적용 방안의 하나로 각 인자간의 영향을 고려하기 위해 반응표면을 설계하는 방법이다. 반응은 triclosan의 제거율(%, $Y_1$)과 TOC 제거율(%, $Y_2$)로 적용되었고 두 개의 독립변수로서 triclosan의 농도를 "$x_1$", 조사강도를 "$x_2$"로 설계하였다. 코드화 된 인자에 대한 Triclosan 제거율과 TOC 제거율에 따른 회귀식은 각각 $Y_1=63-12.4335x_1+15.1835x_2+5.8125x{_1}^2-5.6875x{_2}^2-0.75x_1x_2(R^2=95.1%,\;R^2(Adj)=91.7%)$과 $Y_2=46-8.8462x_1+11.7175x_2-0.75x{_1}^2-6.25x{_2}^2(R^2=98.7%,\;R^2(Adj)=97.7%)$로 나타났다. $Y_1$과 $Y_2$에 대한 모델 예측식의 결정계수($R^2$)와 수정결정계수($R{^2}_{(Adj)}$)의 값이 90% 이상으로 나타나 실험적 관찰결과와 잘 부합하였다. 이러한 결과는 회귀모델이 E-beam 공정에서의 인자영향을 잘 설명하며 통계적 적용이 성공적으로 적용된 것으로 판단된다.

• 한국기계가공학회지
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• 제21권8호
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• pp.79-86
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• 2022

With the recent increase in the demand for electric vehicles, it is necessary to identify the high current safety of automobile parts. Among the automobile parts, the EPDM parts required colored parts from the existing black; therefore, it was necessary to change the basic filler from carbon black to silica. The rubber used in automobile parts is flexible and exhibits basic characteristics of high strength and elongation. However, as the filler is changed to silica, its physical properties, such as tensile strength and elongation, are lower than those of the existing carbon black base. Therefore, it is necessary to evaluate the mechanical properties with the addition of the EPDM compound using silica as a base without degrading the physical properties of EPDM. In this study, an experiment based on the additive content was performed using the mixture experimental planning method to analyze the mechanical properties according to the additive type and mixing ratio of silica-based EPDM. The mixing ratio of the four additives was set using a simplex lattice design, and the tensile strength, elongation, modulus 300%, and permanent compression reduction rate were analyzed for mechanical characteristics, and rheometer experiments were performed for vulcanization characteristics. Through statistical analysis of the measured data, the main effects and interactions of the EPDM-blended rubber additives were analyzed. These results can be used to derive a mixing ratio of additives that satisfies the required characteristics of the EPDM compound.

• 대한환경공학회지
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• 제32권1호
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• pp.33-46
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• 2010

본 연구는 광분해 산화공정으로 난분해성 물질인 N-Nitrosodimethylamine (NDMA)인 제거 및 부산물 생성 특성을 파악하기 위한 3개의 독립변수 (자외선 강도($X_1:\;1.5{\sim}4.5\;mW/cm^2$, 초기 NDMA 농도($X_2:\;100{\sim}300\;uM$), pH(X3:3~9))와 4개의 종속변수(NDMA 제거율($Y_1$), dimethylamine (DMA) 생성농도($Y_2$), dimethylformamide (DMF) 생성농도($Y_3$) 및 $NO_2$-N 생성농도($Y_4$))로 구성된 박스-벤켄 설계를 이용한 실험계획을 적용시켜 예측 모델과 광분해 산화 최적조건을 수립하였다. 실험결과 2시간 광분해 후 NDMA는 거의 완전히 제거되었으며 DMA, DMF와 $NO_2$-N은 NDMA 광분해와 동시에 부산물로 생성되었다. 광분해 최적의 조건을 얻기 위해 정준분석을 수행하여 최적 점 (반응값, 독립변수 조건)과 예측반응모델을 수립한 결과, 다음과 같은 결과를 얻었다 ($Y_1=117+21X_1-0.3X_2-17.2X_3+{2.43X_1}^2+{0.001X_2}^2+{3.2X_3}^2-0.08X_1X_2-1.6X_1X_3-0.05X_2X_3$ ($R^2$ = 96%, Adjusted $R^2$ = 88%)와 99.3% ($X_1:\;4.5\;mW/cm^2$, $X_2:\;190\;uM$, $X_3:\;3.2$), $Y_2=-101+18.5X_1+0.4X_2+21X_3-{3.3X_1}^2-{0.01X_2}^2-{1.5X_3}^2-0.01X_1X_2-0.07X_1X_3-0.01X_2X_3$ ($R^2$= 99.4%, 수정 $R^2$ = 95.7%)와 35.2 uM ($X_1:\;3\;mW/cm^2$, $X_2:\;220\;uM$, $X_3:\;6.3$), $Y_3=-6.2+0.2X_1+0.02X_2+2X_3-{0.26X_1}^2-{0.01X_2}^2-{0.2X_3}^2-0.004X_1X_2+0.1X_1X_3-0.02X_2X_3$ ($R^2$= 98%, 수정 $R^2$ = 94.4%)와 3.7 uM ($X_1:\;4.5\;mW/cm^2$, $X_2:\;290\;uM$, $X_3:\;6.2$), $Y_4=-25+12.2X_1+0.15X_2+7.8X_3+{1.1X_1}^2+{0.001X_2}^2-{0.34X_3}^2+0.01X_1X_2+0.08X_1X_3-3.4X_2X_3$ ($R^2$= 98.5%, 수정 $R^2$ = 95.7%)와 74.5 uM ($X_1:\;4.5\;mW/cm^2$, $X_2:\;220\;uM$, $X_3:\;3.1$). 반응표면분석법 중 하나인 박스-벤켄법은 UV 광분해에 의한 NDMA 분해 및 부산물 생성에 대한 통계학적 및 수학적인 결과 및 최적의 운전조건을 제시하였다. 예측모델의 검정을 통하여 박스-벤켄법은 매우 높은 신뢰성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.