• Title/Summary/Keyword: State-Dependence

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Dependence of Turn-On Voltage and Surface State Density on the Silicon Crystallographic Orientation (실리콘 결정의 방향성에 따른 Turn-On 전사과 추면대융단파의 상대성에 관한 연구)

  • 성영권;성만영;조철제;고기만;이병득
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.33 no.4
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    • pp.157-163
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    • 1984
  • The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

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Characteristics of AC Hot-carrier-induced Degradation in nMOS with NO-based Gate Dielectrics (NO기반 게이트절연막 NMOS의 AC Hot Carrier 특성)

  • Chang, Sung-Keun;Kim, Youn-Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.586-591
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    • 2004
  • We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

Twisted Intramoecular Charge-Transfer Behavior of a Pre-Twisted Molecule, 4-Biphenylcarboxylate Bonded to Poly(Methyl Methacrylate)

  • 강성관;안교덕;조대원;윤민중
    • Bulletin of the Korean Chemical Society
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    • v.16 no.10
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    • pp.972-976
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    • 1995
  • A trace amount of 4-biphenylcarboxylate having a pre-twisted biphenyl moiety was attached to a poly(methyl methacrylate) side chain and the fluorescence properties of the chromophore were investigated in various solvents such as ethyl acetate and butyl chloride. At room temperature, the polymer exhibited a distinct red shift of the short wavelength emission (325 nm) and an enhanced emission intensity around 430 nm upon excitation at the absorption red edge. The temperature dependence of the intensity ratio (R) of the 325 nm emission to the 430 nm emission was observed when exciting at the red edge over the temperature range between -20 and 60 ℃. However, the temperature dependence was not observed when exciting at the shorter wavelength. The Arrhenius plot of the R value shows the activation energy of 6.0 kJ/mol which is in good agreement with the energy required for the twist of the biphenyl moiety. Together with the results of red edge excitation effects it was concluded that the pre-twisted geometry of the biphenyl moiety is preserved by the restriction of the polymer chain to facilitate the formation of the twisted intramolecular charge transfer (TICT) state upon excitation.

Proton Transfer Equilibria in The Excited State of Piroxicam and Its Analog in Aqueous Solution

  • Yoon, Min-Joong;Kim, Yong-Hee
    • Bulletin of the Korean Chemical Society
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    • v.10 no.5
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    • pp.434-437
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    • 1989
  • The pH dependence of the absorption and fluorescence of 4-hydroxy-2-methyl-1,2-benzothiazinenecarboxylat es, piroxicam and HMBDC have been measured and compared with the solvent dependence of the spectra reported previously. Four different prototropic species are observed in both ground and excited states of piroxicam ; the cation, the neutral, the anion and the dianion, while three different species such as the cation, the neutral and the anion are observed in HMBDC. The $pK_a$ and $pK_a^{\ast}$ have been determined by absorptiometric titration and Forster cycle method, respectively. The probable structure of each species has been proposed on the basis of the intramolecular phototautomerism.

Solvent Dependence of Absorption and Fluorescence Spectra of Piroxicam. A Possible Intramolecular Proton Transfer in the Excited State

  • Yoon, Min-Joong;Choi, Hyong-Nae;Kwon, Hwang-Won;Park, Koon-Ha
    • Bulletin of the Korean Chemical Society
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    • v.9 no.3
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    • pp.171-175
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    • 1988
  • The spectral properties of piroxicam in different solvents are similar to those of its skeletal precursor, HMBDC. The maximum absorption and emission wavelengths strongly depend on the hydrogen bonding ability of the solvent, and it is shown that intramolecular hydrogen bonding between the -OH and the ortho carbonyl group of the parent benzothiazine ring plays an important role in the solvent-dependence of their spectroscopic properties. The fluorescence spectra in aprotic nonpolar solvent exhibit abnormally large Stokes-shifted (${\sim}9,000cm^{-1}$) emission bands in contrast to the spectra in water. In ethanol, dual emission bands with two different fractional components of lifetimes have been observed. These results suggest that the abnormally red-shifted emission is attributed to the proton transferred form of an intramolecularly hydrogen-bonded closed conformer.

A Study on the Reason of the Changes of MILC Poly-Si TFT's Characteristics by Electrical Stress (전기적 스트레스에 의한 MILC poly-Si TFT 특성변화 원인에 관한 연구)

  • Kim, Gi-Bum;Kim, Tae-Kyung;Lee, Byung-Il;Joo, Seung-Ki
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.12
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    • pp.29-34
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    • 2000
  • The effects of electrical stress on MILC(Metal Induced Lateral Crystallization) poly-Si TFT were studied. After the electrical stress was applied on the TFT’s which were fabricated by MILC process, off-state(VG<0V) current was reduced by $10^2{\sim}10^4$ times. However, when the device on which electrical stress was applied was annealed in furnace, the off-state current increased as annealing temperature increased. From the dependence of off-state current on the post-annealing temperature, activation energy of the trap states in MILC poly-Si thin films was calculated to be 0.34eV.

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Corrosion and Passivation of Copper in Artificial Sea Water (인공해수에서 구리의 부식과 부동화 반응)

  • Chon, Jung-Kyoon;Kim, Youn-Kyoo
    • Journal of the Korean Chemical Society
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    • v.51 no.4
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    • pp.305-311
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    • 2007
  • Based on the cyclic voltammograms, potentiodynamic polarizations, transient and steady state Tafel plots and electrochemical impedence spectroscopy, we proposed the copper redox mechanism of the corrosion and passivation in artificial sea water. The copper redox mechanism showed the dependence of the concentration of oxygen in artificial sea water and electrode potentials.

Terahertz Oscillations in p-Type Quantum-Well Oscillators

  • Cao, J.C.;Li, A.Z.
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.1
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    • pp.43-45
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    • 2002
  • We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.

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EFFECT OF NITROGEN POSITION ON EXCITED STATE PROPERTIES OF 1-(9- ANTHRYL )-2-(n-QUINOLINYL)ETHENES

  • Shin, Eun-Ju
    • Journal of Photoscience
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    • v.6 no.2
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    • pp.61-65
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    • 1999
  • The fluorescence properties and photoisomerization behavior of 1-(9-anthryl)-2-(n-quinolinyl)ethene (n-AQE, n=2-4) have been investigated in various solvents. t-3-AQE is strongly fluorescent, but does not accomplish photoisomerization, similar to parent hydrocarbon compound, t-1-(9-anthryl)-2-phenylethene (t-9-APE) or t-1-(9-anthryl)-2-(1-naphthyl)ethene (t-1-ANE). Fluorescence and photoisomerization oft-2-AQE and t-4-AQE are strongly affected by solvent polarity. Dependence of fluorescence quantum yield on the solvent polarity is moderate for t-2-AQE and large for t-4-AQE. In nonpolar solvent (in n-hexane), they exhibit relatively strong fluorescence, but do not isomerize to cis isomer on irradiation, even if inefficient isomerization is observed for t-4-AQE. However, as solvent polarity increases, their fluorescences become weak with efficient photoisomerization to corresponding cis isomer. Intramolecular charge-transfer excited state is presumed to contribute to photoisomerization. The S$_1$ decay parameters were found to be solvent-dependent due to the charge-transfer character of lowest S$_1$ state. In polar solvents, the activation barrier to twisting is reduced enhancing the isomerization of r-2-AQE and t-4-AQE in the singlet manifold.

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Mixed-state Hall angle Hg-based superconducting thin films

  • Kim, Wan-Seon;Lee, Sung-Ik;Kang, Won-Nam
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.41-44
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    • 2000
  • The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T$^{\ast}$) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T$^{\ast}$ shifts to low temperature with increasing fields. Interestingly, however, we found that T$^{\ast}$ is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H - T$^{\ast}$ line will be discussed.

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