• Title/Summary/Keyword: State-Dependence

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A Direct Utility Model with Dynamic Constraint

  • Kim, Byungyeon;Satomura, Takuya;Kim, Jaehwan
    • Asia Marketing Journal
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    • v.18 no.4
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    • pp.125-138
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    • 2017
  • The goal of the study is to understand how consumers' constraint as opposed to utility structure gives rise to final decision when consumers purchase more than one variant of product at a time, i.e., horizontal variety seeking or multiple-discreteness. Purchase and consumption decision not only produces utility but also involves some sort of cognitive pressure. Past consumption or last purchase is likely to be linked to this burden we face such as concern for obesity, risk of harm, and guilt for mischief. In this research, the existence and the role of dynamic constraint are investigated through a microeconomic utility model with multiple dynamic constraint. The model is applied to the salty snacks data collected from field study where burden for spiciness serves as a constraint. The results are compared to the conventional multiple discreteness choice models of static constraints, and policy implications on price discounts is explored. The major findings are that first, one would underestimate the level of consumer preference for product offerings when ignoring the carry-over of the concern from the past consumption, and second, the impact of price promotion on demand would be properly evaluated when the model allows for the role of constraint as both multiple and dynamic. The current study is different from the existing studies in two ways. First, it captures the effect of 'mental constraint' on demand in formal economic model. Second, unlike the state dependence well documented in the literature, the study proposes the notion of state dependence in different way, via constraint rather than utility.

Structural Studies of Hydrotalcite Compounds Calcined with Different Temperatures by $^{27}Al$ Solid-state NMR Spectroscopy

  • Park, Tae-Joon;Kim, Yong-Ae
    • Journal of the Korean Magnetic Resonance Society
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    • v.11 no.1
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    • pp.42-47
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    • 2007
  • Several hydrotalcite compounds calcined with different temperature for applications in a chlorine resistant textile were prepared, and its structural changes in dependence on the temperature were studied by using $^{27}Al$ solid-state nuclear magnetic resonance(NMR) spectroscopy. We found that the Al coordination was partly lowered from octahedral to tetrahedral site as the calcined temperature goes up. And we also investigated the hydrotalcite-treated textile for chlorine resistance by using $^{27}Al$ solid-state NMR spectroscopy.

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OPTIMAL CONTROL OF SYSTEMS OF PARABOLIC PDES IN EXPLOITATION OF OIL

  • Li, Chunfa;Feng, Enmin;Liu, Jinwang
    • Journal of applied mathematics & informatics
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    • v.13 no.1_2
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    • pp.247-259
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    • 2003
  • Optimal control problem for the exploitaton of oil is investigated. The optimal control problem under consideration in this paper is governed by weak coupled parabolic PDEs and involves with pointwise state and control constraints. The properties of solution of the state equations and the continuous dependence of state functions on control functions are investigated in a suitable function space; existence of optimal solution of the optimal control problem is also proved.

Enhanced Coulomb Counting Method for State-of-Charge Estimation of Lithium-ion Batteries based on Peukert's Law and Coulombic Efficiency

  • Xie, Jiale;Ma, Jiachen;Bai, Kun
    • Journal of Power Electronics
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    • v.18 no.3
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    • pp.910-922
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    • 2018
  • Conventional battery state-of-charge (SoC) estimation methods either involve sophisticated models or consume considerable computational resource. This study constructs an enhanced coulomb counting method (Ah method) for the SoC estimation of lithium-ion batteries (LiBs) by expanding the Peukert equation for the discharging process and incorporating the Coulombic efficiency for the charging process. Both the rate- and temperature-dependence of battery capacity are encompassed. An SoC mapping approach is also devised for initial SoC determination and Ah method correction. The charge counting performance at different sampling frequencies is analyzed experimentally and theoretically. To achieve a favorable compromise between sampling frequency and accumulation accuracy, a frequency-adjustable current sampling solution is developed. Experiments under the augmented urban dynamometer driving schedule cycles at different temperatures are conducted on two LiBs of different chemistries. Results verify the effectiveness and generalization ability of the proposed SoC estimation method.

Photodynamics of an excited triplet state in the presence of molecular oxygen cluster

  • Nishimura, Yoshinobu
    • Rapid Communication in Photoscience
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    • v.2 no.3
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    • pp.72-75
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    • 2013
  • Bulk nanobubble is one of the nanoscopic gaseous state found in the solution. We measured transient absorption spectra of eosin Y in the excited triplet state ($^3EY^{2-*}$) to elucidate differences in the dissipation process of the bulk nanobubble of oxygen molecule at air pressure. The time dependence of the oxygen dissipation process was classified three time domains (P1, P2 and P3). The comparison of ordinary bubbling method gave different results at P3 in contrast to similar results at P1 and P2, indicating the existence of characteristic dissolving state in the case of nanobubble.

A Study on the Linearity Synapse Transistor of Analog Memory Devices in Self Learning Neural Network Integrated Circuits (자기인지 신경회로망에서 아날로그 기억소자의 선형 시냅스 트랜지스터에 관한연구)

  • 강창수
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.783-793
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    • 1997
  • A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

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Study on Argon Metastable and 4p State Neutral Atoms in Magnetized ICP and Helicon Plasmas Measured by Laser Induced Fluorescence and Plasma Emission

  • Seo, Byeong-Hun;Yu, Sin-Jae;Kim, Jeong-Hyeong;Seong, Dae-Jin;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.579-579
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    • 2013
  • We study on Argon metastable and 4p state neutral atom density in magnetized ICP Helicon plasmas by Laser Induced Fluorescence and plasma emission. The results show that metastable density is too low at the center of chamber due to significant neutral depletion. Otherwise, 4p state is high at the center of chamber because electron density is very high. Power and pressure dependence of metastable and 4p state neutral atom have been spatially measured in the radial direction of cylindrical chamber.

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A Study on the Linearity Synapse Transistor in Self Learning Neural Network (자기인지 신경회로망에서 선형 시냅스 트랜지스터에 관한 연구)

  • 강창수;김동진;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.59-62
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    • 2000
  • A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

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The Effect of Vibrationally Excited Levels on the Pressure Saturation of the Collisional Quenching of the $^3B_1\;State\;of\;SO_2

  • Bae, S. C.
    • Bulletin of the Korean Chemical Society
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    • v.17 no.1
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    • pp.56-60
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    • 1996
  • The pressure saturation effect on the phosphorescence decay rates of the $^3B_1$ State of $SO_2$ has been reinvestigated by the laser induced phosphorescence method in pure $SO_2$. We have attempted to fit the pressure dependence of the phosphorescence decay rates using the radiationless transition model by introducing different coupling constants for each vibrational level ofthe 3B1 state. The experimental decay rates can be fitted well, when the coupling constants for the (0,0,0), (0,1,0) and (0,2,0) levels of the $^3B_1$ state are $7.2\;{\times}\;10^{-4}$, $2.2\;{\times}\;10^{-3}$ and $5.9\;{\times}\;10^{-3}\;cm^{-1}$, respectively.

The Trap Characteristics of SILC in Silicon Oxide for SoC

  • Kang C. S.
    • Proceedings of the IEEK Conference
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    • summer
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    • pp.209-212
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    • 2004
  • In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

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