• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.530-538
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• 2007

An inductor library for efficient low cost RFIC design has been developed based on a standard digital 0.18 ${\mu}m$ CMOS process. The developed library provides four structural variations that are most popular in RFIC design; standard spiral structure, patterned ground shield(PGS) structure to enhance quality factor, stacked structure to enable high inductance values in a given silicon area, multilayer structure to lower series resistance. Electromagnetic simulation, equivalent circuit, and parameter extraction processes have been verified based on measurement results. The extensive measurement and simulation results of the inductor library can be a great asset for low cost RFIC design and development.

• Magazine of the Korea Concrete Institute
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• v.11 no.1
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• pp.119-127
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• 1999

The objective of this study is to simulate the fracture behavior of composite structure bonded with more than 2 different cementitious materials. For this, concrete and cement were stacked and bonded in a direction perpendicular to loading and specimens were tested. Each constituent material of concrete and cement was fabricated independently also, and three point bending and indirect tensile tests were carried out for the acquisition of measured values applicable to the proposed model. As a result of comparing theoretical results and experimental ones, it was found that the proposed model derived from fictitious crack theory can be used to predict the fracture behavior of composite structures on the vases of well agreement with experimental results. It was also noted that the degree of improvement of fracture energies and strengths is greatly dependent on the stacking sequence of layers composing of a composite structure. Thus, it can be concluded that brittleness or ductility of a composite structure can be accomplished by a proper arrangement of layers on one's purpose throughout the proposed analysis.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1220-1221
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• 2008

Submicron-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst(Ni)/buffer(Al/Ni/TiN)/W-tip. This study focuses on elucidating how the Al/Ni/TiN stacked buffer layer affects the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM), high-resolution transmission electron microscopy(HRTEM), and x-ray photoelectron spectroscopy(XPS) are used to monitor the nanostructures, surface morphologies, chemical bonds of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the excellent performances.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.7-16
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• 2000

This paper reports a methodology and its application for extracting cell capacitances and parasitic capacitances in a stacked DRAM cell structure by a numerical technique. To calculate the cell and parasitic capacitances, we employed finite element method (FEM), The three-dimensional DRAM cell structure is generated by solid modeling based on two-dimensional mask layout and transfer data. To obtain transfer data for generating three-dimensional simulation structure, topography simulation is performed. In this calculation, an exemplary structure comprising 4 cell capacitors with a dimension of $2.25{\times}1.75{\times}3.45{\mu}m^3$, 70,078 nodes with 395,064 tetrahedra were used in ULTRA SPARC 10 workstation. The total CPU time for the simulation was about 25 minutes, while the memory size of 201MB was required. The calculated cell capacitance is 24.34fF per cell, and the influential parasitic capacitances in a stacked DRAM cell are investigated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.230-238
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• 2017

We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

• Proceedings of the Membrane Society of Korea Conference
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• 1995.04a
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• pp.16-20
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• 1995

The spontaneous self-organization of amphiphilic molecules into complex aggregates was undoubtedly an important factor in the emergence of life on earth. We study the parameters governing the self-organization of a simple amphiphilic model system using electron cryomicroscopy of ice-embedded specimens in combination with extensive data analysis. Different stable helices can be generated reproducibly by changing the parameters controlling the molecular aggregation process. The repeating units of the helical aggregates in the micrographs can be found by multivariate statistical image analysis techniques, and these two-dimensional projection images suffice for calculating the three-dimensional density distribution of the fibers. We present a typical structure consisting of a narrow stack of compartmented bilayers twisted into a left-handed helix. Our new techniques directly elucidate the three-dimensional structure of helical assemblies, and can complement or replace diffraction-based approaches.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.43-47
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• 2001

A compact size microstrip antenna element using FR-4 substrate is proposed for use in repeater and base stations. Two stacked patches are aperture-coupled by two split feedlines. Rectangular stubs on the split feedlines are laid under the aperture and have the effect of considerably lowing the magnitude of $S_{11}$ [dB] and broadening impedance bandwidth. The designed structure has been fabricated and measured. Based on 20 dB, the return loss bandwidth is about 16.8% (1.86 GHz~2.20 GHz), which covers the frequency range assigned for IMT-2000 with a large margin. The overall dimension of the proposed antenna structure is 37 mm$\times$41 mm$\times$19mm (very compact). The antenna gain is more than 7.5 dBi over the required frequency range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.683-687
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• 2017

We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the 'alumina/glass (including alumina additive)/alumina' structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a $500-{\mu}m-thick$ substrate.

• Science of Emotion and Sensibility
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• v.16 no.1
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• pp.85-94
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• 2013

Recently, researches of piezoelectric energy harvesting were tried and in this study, a piezoelectric energy harvesting clothes was developed. First, piezoelectric energy harvesting zone on the extremities were drawn by 3D motion capturing and as a result, the hip, the elbow, and the knee were determined. A new structure of piezoelectric harvester was developed for appling to clothes. Because it needed to be flexible and sensitive for human body, the 2 layer stacked structure was proposed. A prototype of seamless garment was designed for a harvesting clothes because it needed to be body-tight and not to restrict the movement. High peak-to-peak voltages were acquired from the energy harvesting clothes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.98.2-98.2
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• 2012

Thin film solar cells are growing up in the market due to their high efficiency and low cost. Especially CdTe and $CuInGaSe_2$ based solar cells are leading the other cells, but due to the limited percentage of the elements present in our earth's crust like Tellurium, Indium and Gallium, the price of the solar cells will increase rapidly. Copper Zinc Tin Sulfide (CZTS) and Copper Zinc Tin Selenide (CZTSe) semiconductor (having a kesterite crystal structure) are getting attention for its solar cell application as the absorber layer. CZTS and CZTSe have almost the same crystal structure with more environmentally friendly elements. Various authors have reported growth and characterization of CZTSe films and solar cells with efficiencies about 3.2% to 8.9%. In this study, a novel method to prepare CZTSe has been proposed based on selenization of stacked Copper Selenide ($Cu_2Se$), Tin Selenide ($SnSe_2$) and Zinc Selenide (Zinc Selenide) in six possible stacking combinations. Depositions were carried out through RF magnetron sputtering. Selenization of all the samples was performed in Close Space Sublimation (CSS) in vacuum at different temperatures for three minutes. Characterization of each sample has been performed in Field Emission SEM, XRD, Raman spectroscopy, EDS and Auger. In this study, the properties and results of $Cu_2ZnSnSe_4$ thin films grown by selenization will be presented.