• Journal of Electrical Engineering and Technology
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• 제8권3호
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• pp.565-571
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• 2013

This paper presents an effective method to improve efficiency of switched reluctance motor by optimizing energy conversion loop. A nonlinear analytical model which takes saturation account is developed to calculate inductance and flux-linkage. The flux-linkage curve is studied to calculate the co-energy increment to obtain the optimum exciting current. For a given cross-section, the exciting current at which co-energy increment is maximum was found to be constant while stack length varies. Then the energy conversion loop was optimized by varying the stack length and turns of windings. The constraints during optimization were that motor was excited by the maximum increment co-energy current and the energy in the loop was determined by rated power of motor. Dynamic finite element analysis was used to evaluate the efficiency of various models and the comparison of results shows promising effects of the proposed method. Experiment was also conducted to validate the simulation result.

• 대한기계학회논문집B
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• 제33권3호
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• pp.207-214
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• 2009

Crossover of nitrogen from cathode to anode is inevitable in typical membranes used in PEM fuel cells. This crossovered nitrogen normally accumulates in the hydrogen recirculation system at anode side channels. Excessive buildup of nitrogen in the anode side lowers the relative hydrogen concentration and finally affects the performance of fuel cell stack. So it is very important to analysis the nitrogen gas crossover at various operating conditions. In this study, characterization of nitrogen gas crossover in PEM fuel cell stack was investigated. The mass spectroscopy (MS) has been applied to measure the amount of the crossovered nitrogen gas at the anode exit. Results show that nitrogen gas crossover rate was affected by current density, anode and cathode stoichiometric ratio and operating pressure. Current density, anode stoichiometric ratio and anode operating pressure do not affect nitrogen crossover rate but anode exit concentration of nitrogen. Cathode pressure and stoichiometric ratio largely affect the nitrogen crossover rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.200-200
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• 2010

이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.

• 전기전자학회논문지
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• 제15권4호
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• pp.287-292
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• 2011

The RF4Control stack is used with microcontrollers and IEEE(R) 802.15.4 transceivers. This paper explains the setup and power consumption measurements for the transceiver based remote controller and target node. It is assumed the reader of this paper has knowledge about RF4CE. The current consumption measurements are made using the ZigBee Platform included with the RF4Control stack. he current consumption measurements are presented, and battery life time is calculated for an remote controller. Note that the results presented in this paper are intended as a guideline only. A variety of factors will influence the battery life calculation and final measurements and calculations should be performed on ZigBee RF4CE Certified Platform.

• 한국세라믹학회지
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• 제45권12호
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• pp.772-776
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• 2008

The Korea Electric Power Research Institute (KEPRI) has been developing planar solid oxide fuel cells (SOFCs) and power systems for combined heat and power (CHP) units. The R&D work includes solid oxide fuel cell (SOFC) materials investigation, design and fabrication of single cells and stacks, and kW class SOFC CHP system development. Anode supported cells composed of Ni-YSZ/FL/YSZ/LSCF were enlarged up to $15{\times}15\;cm^2$ and stacks were manufactured using $10{\times}10\;cm^2$ cells and metallic interconnects such as ferritic stainless steel. The first-generation system had a 37-cell stack and an autothermal reformer for use with city gas. The system showed maximum stack power of about $1.3\;kW_{e,DC}$ and was able to recover heat of $0.57{\sim}1.2\;kW_{th}$ depending on loaded current by making hot water. The second-generation system was composed of an improved 48-cell stack and a prereformer (or steam reformer). The thermal management subsystem design including heat exchangers and insulators was also improved. The second-generation system was successfully operated without any external heat source. Under self-sustainable operation conditions, the stack power was about $1.3\;kW_{e,DC}$ with hydrogen and $1.2\;kW_{e,DC}$ with city. The system also recuperated heat of about $1.1\;kW_{th}$ by making hot water. Recently KEPRI manufactured a 2kW class SOFC stack and a system by scaling up the second-generation 1kW system and will develop a 5kW class CHP system by 2010.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.1986-1991
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• 2007

KEPRI has studied anode-supported planar SOFCs and kW class stacks operated at intermediate temperature for development of a combined heat and power unit. A single cell composed of Ni-YSZ/FL/ScSZ/LSCF showed the maximum power density of 0.55 W/$cm^2$ at $650^{\circ}C$ and 1.8 W/$cm^2$ at $750^{\circ}C$. With 37 cells of 10${\times}10cm^2$ and stainless steel interconnects, a 1kW class SOFC stack was manufactured. When a 1kW class SOFC system was operated at $750^{\circ}C$ with city gas, it showed the power output of 1.3 kWe at 50 A. It also recuperated heat of 0.57-1.2 kWth according to the loaded current through combustion of unreacted anode off-gas. Recently, KEPRI is developing a new kW class SOFC stack and system to increase efficiency and durability at intermediate temperature.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.206-211
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• 2005

The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.65-71
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• 2007

칩 스택 패키지에 적용을 위해 폭 $75{\sim}10\;{\mu}m$, 길이 3mm의 트랜치 비아에 대해 도금전류밀도 및 rotating disc electrode(RDE)의 회전속도에 따른 Cu filling 특성을 분석하였다. RDE 속도가 증가함에 따라 트랜치 비아의 Cu filling 특성이 향상되었다. 트랜치 비아의 반폭 길이, 즉 트랜치 비아 폭의 1/2 길이와 이 트랜치 비아에 대해 95% 이상의 Cu filling 비를 얻기 위한 RDE 최소속도 사이에는 Nernst 관계식이 성립하여, 95%이상의 Cu filling비를 얻을 수 있는 최소 트랜치 비아의 반폭 길이는 RDE 속도의 제곱근의 역수에 직선적으로 비례하였다.

• 전기학회논문지P
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• 제65권2호
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• pp.88-93
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• 2016

Soft starters are used with large induction motors in blowers, fans, pumps and the crane hoist drives. AC voltage controllers are used as soft starters in induction motors for starting and to adjust its speed. Soft-starter starting system uses phase control method of input electric source through the setting of the thyristor(SCR) firing angle ${\alpha}$, and it can control input electric source stably and continuously from beginning of starting to ending of starting. In this paper, it is verified that power stack of high-voltage with SCR series system possesses dielectric strength and input electric source is controlled stably by phase control. Especially, from the driving experimental of proposed soft-starter operating, a smoothing acceleration and inrush current decrease can be achieved by the series SCR trigger.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.