• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.163-163
• /
• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Journal of IKEEE
• /
• v.14 no.1
• /
• pp.33-39
• /
• 2010

In this paper, a 5Gb/s receiver with an adaptive equalizer for serial link interfaces is proposed. For effective gain control, a least-mean-square (LMS) algorithm was implemented with two internal signals of slicers instead of output node of an equalizing filter. The scheme does not affect on a bandwidth of the equalizing filter. It also can be implemented without passive filter and it saves chip area and power consumption since two internal signals of slicers have a similar DC magnitude. The proposed adaptive equalizer can compensate up to 25dB and operate in various environments, which are 15m shield-twisted pair (STP) cable for DisplayPort and FR-4 traces for backplane. This work is implemented in $0.18-{\mu}m$ 1-poly 4-metal CMOS technology and occupies $200{\times}300{\mu}m^2$. Measurement results show only 6mW small power consumption and 2Gbps operating range with fabricated chip. The equalizer is expected to satisfy up to 5Gbps operating range if stable varactor(RF) is supported by foundry process.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.3
• /
• pp.1075-1080
• /
• 2015

A hybrid electric vehicle (HEV) powertrain has more than one energy source including a high-voltage electric battery. However, for a high voltage electric battery, the average current is relatively low for a given power level. Introduced to increase the voltage of a HEV battery, a compact, high-efficiency boost converter, sometimes called a step-up converter, is a dc-dc converter with an output voltage greater than its input voltage. The inductor occupies more than 30% of the total converter volume making it difficult to get high power density. The inductor should have the characteristics of good thermal stability, low weight, low losses and low EMI. In this paper, Mega Flux^® was selected as the core material among potential core candidates. Different structured inductors with Mega Flux^® were fabricated to compare the performance between the conventional air cooled and proposed potting structure. The proposed inductor has reduced the weight by 75% from 8.8kg to 2.18kg and the power density was increased from 15.6W/cc to 56.4W/cc compared with conventional inductor. To optimize the performance of proposed inductor, the potting materials with various thermal conductivities were investigated. Silicone with alumina was chosen as potting materials due to the high thermo-stable properties. The proposed inductors used potting material with thermal conductivities of 0.7W/m·K, 1.0W/m·K and 1.6W/m·K to analyze the thermal performance. Simulations of the proposed inductor were fulfilled in terms of magnetic flux saturation, leakage flux and temperature rise. The temperature rise and power efficiency were measured with the 40kW boost converter. Experimental results show that the proposed inductor reached the temperature saturation of 107℃ in 20 minutes. On the other hand, the temperature of conventional inductor rose by 138℃ without saturation. And the effect of thermal conductivity was verified as the highest thermal conductivity of potting materials leads to the lowest temperature saturations.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.9 no.3
• /
• pp.88-96
• /
• 1995

High speed elevator requires precise drive included in zero speed at start/stop drive for the high stability and controllability. The vector control techniques, which have been used for the precise operation of induction motor, can be divided into two classes; The indirect vector control by slip frequency and the direct vector control by field orientation. The existing direct vector control technique has a robustness against the change of motor parameter and the existing indirect vector control technique has a strength of control ability in the wide speed range comparatively. This study presents the DTIF (Direct Torque Indirect Flux) controller which has robust movement in the transition state and in about zero and low speed using the control technique in which torque is controlled by the direct vector technique and flux is controled by indirect vector technique. The proposed system is verified by simulation and experiment for driving 3 phase induction motor. The process of transition which is from about zero speed and low speed to high speed is compared and measured to specification of phase voltage, phase current and DC link current. It is verified that DTIF controller show robust and stable speed variation.

• Polymer(Korea)
• /
• v.24 no.1
• /
• pp.90-96
• /
• 2000

Organic electroluminescent (EL) device was fabricated with Alq$_3$ as an emitting material and PDPMA ultra thin film prepared by Langmuir-Boldgett technique as a polymer hole transport layer. A stable condensed PDPMA monolayer was obtained using arachidic acid as a surface active material. The thickness and absorbance of PDPMA LB film increased line-arly with the layer numbers. The organic multilayered device consisted of ITO/PDPMA LB film (19 layers)/Alq$_3$/Al emitted green light with brightness of 2500 cd/m$^2$ at a DC 14 V Especially, the drive voltage of EL device having PDPMA LB film of 15 layers exhibited the value as low as 4 V. The effects of thickness control and molecular orientation in the PDPMA LB film on EL performance were discussed.

• Progress in Superconductivity
• /
• v.8 no.2
• /
• pp.181-185
• /
• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• Journal of Life Science
• /
• v.12 no.2
• /
• pp.121-128
• /
• 2002

The object of this study was to investigate the effect of membrane fluidity of bellflower(Platycodon grandiflorum A. DC, ; PG) fractions in phosphatidylcholine(PC) liposomes, measured with high-sensitivity differential scanning calorimetry(DSC). We used dipalmitoylphosphatidylcholine(DPPC) bilayers which slake most stable liposomes among the other phosphatidylcholine. The sample PG was extracted and fractionated to five different types : butanol(PGMB), ethylacetate(PGMEA), ethylether(PGMEE), hexane (PGMH) and methanol(PGMM). Among five different solvent fractions, the PGMEE, PGMEA, PGMH and PGMM fractions markedly affected the thermotropic properties of DPPC liposomes, broadened and shifted the thermograms, and reduced the cooperative unit. It might be said that the incorporation of PGMEE, PGMEA and PGMH in DPPC liposomes were located in the hydrophobic core of DPPC bilayers and, PGMM and PGMB in the hydrophilic core of DPPC bilayers. These results suggest that certain substances in the PGMEE, PGMEA and PGMH fractions might have biologically significant effect on the membrane fluidity.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.461-465
• /
• 2008

The phase transformation in a film influences its surrounding. Effects of the precrystallization method, which removes influences on gate oxide caused by lateral crystallization, in metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor devices and circuits were studied. Device by the method was shown to have a higher current drive, compared with conventional postcrystallized device. Moreover, we studied DC bias-induced changes in the performance of ring oscillator. PMOS inverters fabricated using precrystallized silicon films have very high dynamic and stable performance, compared with inverters fabricated using postcrystallized silicon films.

• Korean Journal of Optics and Photonics
• /
• v.17 no.3
• /
• pp.262-267
• /
• 2006

We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

• Korean Journal of Optics and Photonics
• /
• v.20 no.5
• /
• pp.294-300
• /
• 2009

To improve the output power of a photomixer as a THz source, we propose a four-leaf clover-shaped antenna structure which is composed of a highly resonant radiation element and a stable DC feed element. The resonance characteristics of the proposed structure were investigated on a half-infinite substrate first as a simplified radiation environment in order to save the computation time. Based on the antenna characteristics on a half-infinite substrate, the antenna structure was designed to have a maximum total efficiency and a maximum directivity on an extended hemispherical lens. In comparison with a full-wavelength dipole, an input resistance of this structure increased six fold and this characteristic significantly improved the mismatch efficiency between a photomixer and an antenna. THz output power from this structure is expected to increase by 2.7 times as compared to a full-wavelength dipole case.