• Journal of Powder Materials
• /
• v.18 no.1
• /
• pp.41-48
• /
• 2011

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr)$TiO_3$ powder. Porous (Ba,Sr)$TiO_3$ ceramics were prepared by pressureless sintering at $1350^{\circ}C$ for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr)$TiO_3$ ceramics were investigated. The porosity of porous (Ba,Sr)$TiO_3$ ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from $7.51\;{\mu}m$ to $5.96\;{\mu}m$ with increasing carbon black contents. PTCR jump of the (Ba,Sr)$TiO_3$ ceramics prepared by adding carbon black was more than $10^5$, and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr)$TiO_3$ ceramics prepared by adding 40 vol% carbon black showed an excellent value of $9.68{\times}10^5$, which was above two times higher than that in (Ba,Sr)$TiO_3$ ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr)$TiO_3$ ceramics. It was considered that carbon black is an effective additive for preparing porous $BaTiO_3$ based ceramics. It is believed that newly prepared (Ba,Sr)$TiO_3$ cermics can be used for PTC thermistor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.9
• /
• pp.810-814
• /
• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.2
• /
• pp.334-340
• /
• 1997

Electric and dielectric properties of the $SrTiO_3$films have been studied. The influence of impurities on $SrTiO_3$ films was evaluated to reduce the leakage current density. Acceptor doping, with a small concentration of Fe or Cr, has led to a substantial improvement to $10^{-9}$ order in the leakage current density. The experimental results can be explained by a model in which oxygen vacancies are the key defects responsible for the leakage current. The $SrTiO_3$ film 200 nm in thickness with 5 mol% excess SrO fabricated in $Ar/O_2$ at $550^{\circ}C$ obtained the lowest leakage current density $1.0 {\times} 1.0 A/\textrm{cm}^2$. The improved results can be introduced into the capacitor dielectric of giga bit DRAM memories.

• Journal of Magnetics
• /
• v.7 no.1
• /
• pp.18-20
• /
• 2002

The charge structures of (LSMO) and of the combined system $(La_{ 0.6}Sr_{0.4}FeO_3$(LSMO) and of the combined system (La_{0.6}Sr_{0.4}MnO_3)_{0.7}(La_{0.6}Sr_{0.4}/FeO_3)_{0.3}$are investigated by using M$\ddot{o}$ssbauer spectroscopy. The antiferromagnetically ordered $(La_{0.6}Sr_{0.4}FeO_3$(LSFO) has possible charges of Fe^{3+} and Fe^{4+}$, which include a low-spin $Fe^{4+}$ state at and above 230 K. The temperature dependences of the M$\ddot{o}$ssbauer spectra for the $(La_{ 0.6}Sr_{0.4}FeO_3$ system and for the combined $(LSMO)_{ 0.7}(LSFO)_{0.3}$ system are fitted as three sets of Zeeman patterns corresponding to $Fe^{3+}$ and $Fe^{4+} below 230 K. At and above 230 K, the fitted M$\ddot{o}$ssbauer spectra for the combined system are the same in all temperature ranges. Above 230 K, $(La_{0.6}Sr_{0.4}FeO_3$ spectrum consists of two sets of six Lorentzians for $Fe^{3+}$ and one line for low spin $Fe^{4+}$. It is worth noting that large fields are induced in the combined system.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.181-183
• /
• 2009

Comparative study of the dependence of the firing voltage of MgSrO and MgCaO protective layers on chemical composition was carried out. It was observed that the firing voltage increases when CaO/MgO or SrO/MgO ratio increases.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.16 no.1
• /
• pp.49-58
• /
• 2018

For the immobilization of high-radioactive nuclides such as Cs and Sr by high-temperature thermal decomposition, this study was carried out to investigate the phase transformation with calcined temperature by using TGA (thermogravimetric analysis) and XRD (X-ray diffraction) in the Cs-adsorbed CHA (chabazite zeolite of K type)-Cs and CHA-PCFC (potassium cobalt ferrocyanide)-Cs zeolite system, and Sr-adsorbed 4A-Sr and BaA-Sr zeolite system, respectively. In the case of CHA-Cs zeolite system, the structure of CHA-Cs remained at up to $900^{\circ}C$ and recrystallized to pollucite ($CsAlSi_2O_6$) at $1,100^{\circ}C$ after undergoing amorphous phase at $1,000^{\circ}C$. However, the CHA-CFC-Cs zeolite system retained the CHA-PCFC-Cs structure up to $700^{\circ}C$, but its structure collapsed in $900{\sim}1,000^{\circ}C$, and then transformed to amorphous phase, and recrystallized to pollucite at $1,100^{\circ}C$. In the case of 4A-Sr zeolite system, on the other hand, the structure of 4A-Sr maintained up to $700^{\circ}C$ and its phase transformed to amorphous at $800^{\circ}C$, and recrystallized to Sr-feldspar ($SrAl_2Si_2O_8$, hexagonal) at $900^{\circ}C$ and to $SrAl_2Si_2O_8$ (triclinic) at $1,100^{\circ}C$. However, the BaA-Sr zeolite system structure began to break down at below $500^{\circ}C$, and then transformed to amorphous phase in $500{\sim}900^{\circ}C$ and recrystallized to Ba/Sr-feldspar (coexistence of $Ba_{0.9}Sr_{0.1}Al_2Si_2O_8$ and $Ba_{0.5}Sr_{0.5}Al_2Si_2O_8$) at $1,100^{\circ}C$. All of the above zeolite systems recrystallized to mineral phase through the dehydration/(decomposition) ${\rightarrow}$ amorphous ${\rightarrow}$ recrystallization with increasing temperature. Although further study of the volatility and leachability of Cs and Sr in the high-temperature thermal decomposition process is required, Cs and Sr adsorbed in each zeolite system are mineralized as pollucite, Sr-feldspar and Ba/Sr-feldspar. Therefore, Cs and Sr seen to be able to completely immobilize in the calcining wasteform/(solidified wasteform).

• Journal of Korean Ophthalmic Optics Society
• /
• v.7 no.2
• /
• pp.19-25
• /
• 2002

Ternary $xSrO-yB_2O_3-0.1Al_2O_3$ and $xSrO-yB_2O_3-0.1SiO_2$ glasses were prepared as a function of R(${\equiv}x/y$). The fraction of four-coordinated brans ($N_4$), symmetric three-coordinated barons ($N_{3S}$), and asymmetric three-coordinated barons ($N_{3A}$) were determined quantitatively to study the structures of these glasses by $^{11}B$ NMR. The values of $Q_{cc}$ and ${\eta}$ for $BO_3$ unit in the glasses were 2.74MHz and 0.22, those for $BO_3{^-}$ unit were 2.54MHz and 0.55, and those for $BO_4$ unit 0.60~0.75MHz and 0.00, respectively. The structure of SrBAl glass at $R_{1st}$ consisted of tetraborate ($[B_8O_{13}]^{-2}$) units and 1st-modified diborate ($[B_2Al_2O_7]^{-2}$) units, and those for the glass at $R_{max}$consisted of diborate ($[B_4O_7]^{-2}$) units, metaborate ($[BO_2^{-1}]$), 1st-modified diborate units, and 2nd-modified diborate ($[B_2Al_2O_8]^{-4}$) units. Due to the oxygens introduced from the strontium oxide. $AlO_4$ units were preferably formed rather than $BO_4$ units. And, the structure of SrBSi glasses in the region $R{\leq}0.5$ could be viewed as binary $SrO-B_2O_3$ glasses structure diluted by silicate oxide: therefore, the Si atoms of the glasses did not contributed to the change the configuration around the boron atoms. The silicate oxide was formed the $SiO_4{^-}$ units rather than the $BO_3{^-}$ units by the oxygens introduced from the storntium oxide in the region of $R{\geq}R_{max}$, and structure of those glass at $R_{max}$ consisted of diborate units, metaborate units loose $BO_4([BO_2]^{-1})$, and $SiO_4{^-}([SiO_{2.5}]^{-1})$ units.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.8
• /
• pp.376-381
• /
• 2001

The(1-x) MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The structural and microwave dielectric properties were investigated by XRD, SEM, EDS and network analyzer. The sintering temperature and time were 1275$^{\circ}C$~135$0^{\circ}C$ and 2hours, respectively. In the XRD results of 0.96MgTiO$_3$-0.04SrTiO$_3$ceramics, the perovskite structure of SrTiO$_3$and ilmenite structure of MgTiO$_3$phase were coexisted. The dielectric constant($\varepsilon$(sub)${\gamma}$) and temperature coefficient of resonant frequency($\tau$(sub)f) were increased with addition of SrTiO$_3$. In thie case of 0.96MgTiO$_3$-0.04SrTiO$_3$ ceramics sintered at 13$25^{\circ}C$, the dielectric constant, quality factor(Q) and temperature coefficient of resonant frequency($\tau$(sub)f) were 20.13, 7956(at 7.27GHz), and +1.76ppm/$^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.5
• /
• pp.210-213
• /
• 2005

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.473-475
• /
• 2000

The (1-x)$MgTiO_3-xSrTiO_3$$(x=0.03{\sim}0.04)$ ceramics were fabricated by conventional mixed oxide method. The structural properties and microwave dielectric properties were investigated by XRD, SEM and HP8757D network analyzer. In the $0.96MgTiO_3-0.04SrTiO_3$ ceramics, the perovskite structure $SrTiO_3$ and ilmenite structure $MgTiO_3$ phases were coexisted. The dielectric constant(${\varepsilon}_r$ and temperature coefficient of resonant frequency(${\tau}_f$) was increased with addition of $SrTiO_3$. In the case of $0.96MgTiO_3-0.04SrTiO_3$ ceramics sintered at $1325^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.13, 7956(at 7.27GHz), +1.7568ppm/$^{\circ}C$, respectively.