• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.478.1-478.1
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• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.394.2-394.2
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• 2014

We fabricated highly transparent and flexible Ti doped In2O3 (TIO)/Ag nanowire(NW)/TIO (TAT) multilayer electrodes by linear facing target sputtering (LFTS) and brush-painting for used as flexible for anode organic solar cells(FOSCs). The characteristics of TAT transparent anode as a function of number of brush-painting cycles was also investigated. At optimized conditions we achieved highly flexible TAT multilayer electrodes with a low sheet resistance of $9.01{\Omega}/square$ and a high diffusive transmittance more than 80% in visible region as well as superior mechanical stability. The effective embedment of the Ag NW network between top and bottom TIO films led to a metallic conductivity, high transparency. Based on FE-SEM HRTEM, and XRD analysis, we can find that the Ag NW network was effectively embedded between top and bottom TIO layers due to good flexibility of Ag NW, the TAT multilayer showed superior flexibility than single TIO layer. Successful operation of FOSCs with high power conversion efficiency of 3.01% indicates that TAT hybrid electrode is a promising alternative to conventional ITO electrode for high performance FOSCs.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• Progress in Superconductivity
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• v.10 no.1
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• pp.29-34
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• 2008

Magnesium diboride ($MgB_2$) is an inexpensive and simple superconductor. This material was first synthesized and its structure confirmed in 1953 but its superconducting properties were not discovered until 2001 when they caused great excitement. In this study, superconducting $MgB_2$ thin films on the r-$Al_{2}O_3$ substrates have been grown by the combination of radio frequency magnetron sputtering of B and thermal evaporation of Mg. The deposition conditions were varied by changing deposition rate. Before the co-deposition of Mg and B, the deposition rates of each element have been measured separately. The $MgB_2$ layers had 400nm in thickness and superconducting transition temperatures have been measured around $\sim$38.6K. Superconducting properties have been measured by PPMS, XRD, and SEM.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.83-89
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• 2000

BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method. $O_2/(Ar+O_2)$ mixing ratio was 10%, substrate temperature was changed from R.T. to $500^{\circ}C$, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of $400^{\circ}C$, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below $3.3{\times}10^{-7\;}A/cm^2$ at 5\;MV/cm applied electric field, and transmittance was over 82% at visible range.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.227-231
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• 2007

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.631-631
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• 2013

Battery has major drawbacks including its size and life expectancy, and environmental problem. As an alternative, energy harvesting is emerging as a potential solution to replace battery along with more energy-efficient IT devices. The idea of harnessing energy from our living environment is sustainable, semi-permanent, and eco-friendly. Also, unlike battery, energy harvester does not require much space to store energy. Therefore, energy harvesting can provide a better source of power for small, portable, and wireless devices. Among various ways of harvesting energy from our surroundings, triboelectricity is chosen due to its potential to be miniaturized, and efficient. Triboelectric effect occurs as two different materials with different polarity of charge separation come into contact through friction, and then become separated so that electric potential difference is achieved. In this research, such characteristic of triboelectricity is used as a way to convert ambient mechanical energy into electric energy.Series of recent researches have shown promising results that the triboelectric energy harvester can be simple and cost effective. However, sufficient electricity level required to operate mobile devices has not yet been achieved.In this research, our group focuses on the design and optimization of triboelectric energy harvesting device to enhance its output. By using maskless lithography to pattern Kapton film and silicon substrate, which is used as a mold for PDMS thin layer, and sputtering metal electrodes on each side, we fabricate and demonstrate different designs of triboelectric energy harvester that utilizes the contact electrification between a polymer thin film and a metal thin foil. In order to achieve optimized result, the output voltage and current are measured under diverse conditions, which include different surface structure and pattern, material, and the gap between layers.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.147-153
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• 1998

Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.