• Proceedings of the KIEE Conference
• /
• 1993.11a
• /
• pp.258-260
• /
• 1993

Aluminum thin films were deposited on glass substrate using DC Magnetron Sputtering. Deposition rate, specular reflectance, and resistivity were investigated as a function of the input power, pressure, substrate temperature, and deposition time. Reflectance was reduced with increasing power, also with prolonging deposition time. Topography of the surface, which influences the properties such as electromigration, was observed from scanning electron microscope (SEM) and there was a close relation between the topography and measured reflectance.

• Journal of the Korean Society for Heat Treatment
• /
• v.24 no.4
• /
• pp.199-202
• /
• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.2
• /
• pp.70-75
• /
• 2006

As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.741-746
• /
• 2009

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

• Korean Journal of Materials Research
• /
• v.12 no.1
• /
• pp.82-88
• /
• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.212-217
• /
• 2000

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.255-260
• /
• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2009.10a
• /
• pp.428-430
• /
• 2009

C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.8
• /
• pp.1236-1241
• /
• 2017

We deposited Al-doped ZnO (ZnO:Al) thin films on glass substrates ($200mm{\times}200mm$) by using in-line magnetron sputtering system. Effects of various deposition parameters such as working pressure, deposition power and substrate temperature on optoelectronic characteristics including surface-texture etching profiles were carefully investigated in this study. We found that relatively low working pressure and high deposition power offered to obtain enhanced conductivity and optical transmittance. Haze properties showed similar trend with the transmittance. Furthermore, surface-texture etching study exhibited good morphologies when the films were deposited at $200-300^{\circ}C$. On the basis of these optimizations, we could find the deposition region that produces highly transparent and conductive properties including efficient light scattering capability.

• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.253-258
• /
• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.