• 한국자기학회:학술대회 개요집
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• 한국자기학회 1996년도 추계연구발표회 논문개요집
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• pp.36-37
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• 1996

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1996년도 춘계연구발표회 논문개요집
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• pp.26-27
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• 1996

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.48-49
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1995년도 추계연구발표회 논문개요집
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• pp.100-101
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• 1995

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 춘계연구발표회 논문개요집
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• pp.150-151
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• 2000

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2001년도 춘계연구발표회 논문개요집
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• pp.46-47
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• 2001

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2001년도 춘계연구발표회 논문개요집
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• pp.120-121
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• 2001

• Journal of Magnetics
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• 제6권4호
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• pp.145-147
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• 2001

The effect of interface roughness between [Ni/Mn] superlattice and pinned NiFe layer on magnetoresistance (MR) of [Ni/Mn] superlattice-based spin valve films was investigated. Antiferromagnetic phase structure and interface roughness of [Ni/Mn] superlattice spin valve films were compared in the as-deposited and the annealed samples at 240$\^{C}$, respectively. Surface morphology of spin valves was substantially flattened due to the formation of the antiferromatic NiMn phase. In case of Co insertion between Cu and NiFe, the interlace roughness and MR ratio in the annealed [NiMn] superlattice and pinned NiFe/Co layer increased more than those in the annealed [Ni/Mn] superlattice and pinned NiFe layers respectively.

• 한국재료학회지
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• 제14권2호
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• pp.94-100
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• 2004

We have investigated the magnetic domain structure and the thermal stability of magnetotransport properties of IrMn biased spin-valves containing Co, CoFe and NiFe. The magnetic domain structures were imaged using a magneto-optical indicator film(MOIF) technique. To investigate the thermal stability, magnetoresistance(MR) was measured at annealing temperature(TANN) and room temperature($T_{RT}$) followed by the annealing. Domain imaging reveal that the increase of annealing temperature led to changes in the exchange coupling between the two ferromagnet(FM) layers through nonmagnetic layer rather than between FM and antiferromagnet. unlike the NiFe biased IrMn spin valve with large domains, MOIF pictures of Co and CoFe biased IrMn spin valve structures show the formation of many small microdomains. The magnetic structure, as revealed by the domain images, appeared unchanged while the MR dropped dramatically. From the combined giant magnetoresistance(GMR) and MOIF results, it was apparent that the decrease of MR ratio was not related to the spin valve magnetic structure up to about $350^{\circ}C$($T_{RT}$ ).

• Journal of Magnetics
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• 제2권3호
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".