• 제목/요약/키워드: Spin-on method

검색결과 709건 처리시간 0.034초

SiO2의 첨가를 통한 Polyfluorene계 Polymer-OLED의 발광 동작 개선 가능성 (Improved On-off Property of SiO2 Embedded Polyfluorene Polymer-OLED)

  • 전병주;김효준;김종수;정용석
    • 반도체디스플레이기술학회지
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    • 제16권1호
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    • pp.40-44
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    • 2017
  • The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

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저작근 및 경부근 긴장도가 측두하악장애에 미치는 영향 (Effects of Masseter and Cervical Muscle Activity in Temporomandibular Joint Disorder)

  • 정재영;김성수
    • 한방재활의학과학회지
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    • 제20권3호
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    • pp.37-60
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    • 2010
  • Objectives : The purpose of this study was to investigate the relationship between masseter and cervical muscle activity and temporomandibular disorder in female office workers. Methods : Experimental group of 24 healthy subjects complained of temporomandibular joint related to computer use which lasted more than 3 months in the past year and was present in the past 7 days as well as on the day of test. Control group of 20 healthy subjects had no complaints of minimal discomfort on the day of test, and had no discomfort in the past 7 days. If they had reported discomfort in the past 12 months, it was of a short duration(<3 months) and resolved at least 3 months prior to participation. Outcomes were assessed by meridian-electromyography(MEMG), whole spin x-ray, mandibular function impairment questionnaire(MFIQ), neck disability index(NDI), visual analog scale(VAS), Beck depression inventory(BDI), stress reaction inventory(SRI) and Holmes & Rahe social readjustment rating scale(SRRS). Results : The contraction power of masseter muscle, upper trapezius, sternocleido-mastoid muscle and erector spinae by MEMG was significantly higher in the experimental group. The muscle fatigue of masseter muscle and sternodeido-mastoid muscle by MEMG was significantly higher in the experimental group. SRI was significantly higher in experimental group. There was no significant difference between two groups in the Jackson's angle, Cobb's method and cranio-cervical posture. Conclusions : The results suggest that temporomandibular disorder related mental stress but physical stress does not change cervical structure significantly.

기상레이더를 이용한 뉴로-퍼지 알고리즘 기반 에코 분류기 설계 (Design of Echo Classifier Based on Neuro-Fuzzy Algorithm Using Meteorological Radar Data)

  • 오성권;고준현
    • 전기학회논문지
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    • 제63권5호
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    • pp.676-682
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    • 2014
  • In this paper, precipitation echo(PRE) and non-precipitaion echo(N-PRE)(including ground echo and clear echo) through weather radar data are identified with the aid of neuro-fuzzy algorithm. The accuracy of the radar information is lowered because meteorological radar data is mixed with the PRE and N-PRE. So this problem is resolved by using RBFNN and judgement module. Structure expression of weather radar data are analyzed in order to classify PRE and N-PRE. Input variables such as Standard deviation of reflectivity(SDZ), Vertical gradient of reflectivity(VGZ), Spin change(SPN), Frequency(FR), cumulation reflectivity during 1 hour(1hDZ), and cumulation reflectivity during 2 hour(2hDZ) are made by using weather radar data and then each characteristic of input variable is analyzed. Input data is built up from the selected input variables among these input variables, which have a critical effect on the classification between PRE and N-PRE. Echo judgment module is developed to do echo classification between PRE and N-PRE by using testing dataset. Polynomial-based radial basis function neural networks(RBFNNs) are used as neuro-fuzzy algorithm, and the proposed neuro-fuzzy echo pattern classifier is designed by combining RBFNN with echo judgement module. Finally, the results of the proposed classifier are compared with both CZ and DZ, as well as QC data, and analyzed from the view point of output performance.

CdTe/CdHgTe 코어쉘 나노입자를 이용한 P채널 전계효과박막트렌지스터의 전기적특성 (Electrical characteristics of Field Effect Thin Film Transistors with p-channels of CdTe/CdHgTe Core-Shell Nanocrystals)

  • 김동원;조경아;김현석;김상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1341-1342
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    • 2006
  • Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.

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Self-Patterning을 이용한 강유전체 $Sr_{0.9}Bi_{2.1}Ta_2O_9$와 산화물 전극 $La_{0.5}Sr_{0.5}CoO_3$의 박막 제조에 관한 연구 (A Study on Fabrication of $Sr_{0.9}Bi_{2.1}Ta_2O_9$ and $La_{0.5}Sr_{0.5}CoO_3$ Thin Films by Self-Patterning Technique)

  • 임종천;조태진;강동균;임태영;김병호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.116-119
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    • 2003
  • Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

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고분자 게이트 전극을 이용한 유기박막 트랜지스터의 제조 및 소자성능에 관한 연구 (Fabrication and Characterization of Organic Thin-Film Transistors by Using Polymer Gate Electrode)

  • 장현석;송기국;김성현
    • 폴리머
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    • 제35권4호
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    • pp.370-374
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    • 2011
  • 폴리아닐린(polyaniline, PANI) 전도성 고분자 용액을 camphorsulfonic acid(CSA)로 도핑하여 제조하였고 FTIR을 이용하여 고분자 중합 및 도핑유무를 확인하였다. 제조된 폴리아닐린을 스핀 코팅하여 유기박막 트랜지스터의 게이트 전극으로 사용하였으며, 열처리 온도변화에 따른 전기 전도도 변화를 4-probe measurement로 확인하였다. 또한 표면 특성을 이해하기 위해 atomic force microscope(AFM)와 optical microscope를 이용하였다. 폴리아닐린 게이트전극을 활용하여 얻은 유기박막 트랜지스터의 소자성능은 최고 이동도가 0.15 $cm^2$/Vs, 전류점멸비가 $2.4{\times}10^6$임을 확인하였다. 고분자 전극의 소지특성을 비교분석하기 위해, 같은 구조의 Au 전극소자를 제작하였다. Au 금속전극소자와 유사한 성능을 보인 폴리아닐렌 게이트 전극 소자는 플렉서블 유기박막 트랜지스터 전극으로 충분히 사용될 수 있다.

ZnO 나노선과 P3HT 폴리머를 이용한 유/무기 복합체 TFT 소자 (ZnO Nanowires and P3HT Polymer Composite TFT Device)

  • 문경주;최지혁;;명재민
    • 한국재료학회지
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    • 제19권1호
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    • pp.33-36
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    • 2009
  • Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

Hot Wall Epitaxy (HWE) 방법으로 성장된 $CuGaTe_2/GaAs$ 에피레이어의 광학적 특성 (Optical Properties for $CuGaTe_2/GaAs$ Epilayers Grown by Hot Wall Epilaxy)

  • 홍광준;박창선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.167-170
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    • 2004
  • The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

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수정된 TFA-MOD법에 의한 (100) $SrTiO_3$ 단결정 기판 위 고 임계전류 밀도 $YBa_2Cu_3O_{7-{\delta}}$ 박막 제조 (Fabrication of high-$J_c$ $YBa_2Cu_3O_{7-{\delta}}$ thin films on (100) $SrTiO_3$ single crystal substrates by a modified TFA-MOD method)

  • 위성훈;신거명;송규정;홍계원;문승현;박찬;유상임
    • 한국초전도ㆍ저온공학회논문지
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    • 제6권1호
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    • pp.12-17
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    • 2004
  • High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

HWE(Hot wall epitaxy)에 의한 CuGaSe$_2$단결정 박막 성장과 특성에 관한 연구 (The study of growth and characterization of CuGaSe$_2$ single crystal thin films by hot wall epitaxy)

  • 홍광준;백형원
    • 한국결정성장학회지
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    • 제10권3호
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    • pp.189-198
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    • 2000
  • 수평전기로에서 $CuGaSe_2$다결정을 합성하여 HWE(Hot Wall Epitaxy) 방법으로 $CuGaSe_2$단결정 박막을 반절연 성 GaAs(100)기판 위에 성장하였다. $CuGaSe_2$단결정박막은 증발원의 온도를 $610^{\circ}C$, 기판의 온도를 $450^{\circ}C$로 성장하였다. 이때 성장된 단결정 박막의 두께는 2.1$\mu\textrm{m}$였다. 단결정 박막의 결정성의 조사에서 20K에서 광발광(photoluminescence) 스펙트럼이 672.6nm(1.8432 eV)에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 138 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $4.87{\times}10^{23}$ electron/$m^{23}$ , $1.29{\times}10^{-2}$$\m^2$/v-s였다. $CuGaSe_2$ 단결정 박막의 광전류 단파장대 봉우리들로부터 20K에서 측정된 $\Delta$Cr(crystal field splitting)은 약 0.0900 eV $\Delta$So(spin orbit coupling)는0.2493 eV였다. 20K에서 광발광 봉우리의 667.6nm(1.8571 eV)는 free exciton($E_x$), 672.6nm(1.8432 eV)는 acceptor-bound exciton 인 $I_2$와 679.3nm(1.8251 eV)는 donor-bound exciton인 $I_1$였다. 또한 690.9nm(1.7945 eV)는 donor-acceptor pair(DAP) 발광 $P_0$이고 702.4nm(1.7651 eV)는 DAP-replica $P_1$, 715.0nm(1.7340 eV)는 DAP-replica $P_2$, 728.9nm(1.7009 eV)는 DAP-replica $P_3$, 741.9nm(1.6711 eV)는 DAP-replica $P_4$로 고찰된다. 912.4nm(1.3589 eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.

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