• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.703-706
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• 2006

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

• 한국레이저가공학회지
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• 제17권1호
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• pp.13-16
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• 2014

Indium Tin Oxide (ITO) has been used widely for transparent conducting thin films. In this work, the feasibility of a laser sintering process to fabricate ITO thin films on flexible substrates is examined. Nanoparticles of ~10 nm were spin coated on a Si wafer and then sintered by a KrF excimer laser. The sintered structure was characterized by scanning electron microscopy. Polycrystalline structures were fabricated by the process without thermally damaging the substrate. The electrical resistivity of the film was reduced to ~ 1/1000 of the initial value. This work demonstrates that nanosecond laser sintering of ITO particles can be a useful tool to fabricate ITO films on various flexible substrates.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Bulletin of the Korean Chemical Society
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• 제22권3호
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• pp.271-275
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• 2001

We investigated H-type molecular aggregation in a simply spin-coated amorphous homopolymer film of polymethacrylate containing push-pull azobenzene moieties. It was found that the aggregate formation was strongly influenced by thermal treatment an d that the aggregate created in the polymer film could be easily disrupted by irradiation of a linearly polarized light. In the first writing cycle of aggregated polymer film, photo-induced birefringence showed a steep increase to the highest value followed by a gradual decrease to the certain asymptotic value under longer irradiation of a linearly polarized light. This unique behavior could be attributed to the cooperative motion and the disruption of the aggregated molecules under continuous irradiation of light.

• Tribology and Lubricants
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• 제22권4호
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• pp.182-189
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• 2006

In this paper, the adhesion characteristics between a fused silica without or with an anti-sticking layer and a thermoplastic polymer film used in thermal NIL were investigated experimentally in order to identify the release performance of the anti-sticking layer. The anti-sticking layers were derived from fluoroalkylsilanes, (1H, 1 H, 2H, 2H-perfluorooctyl)trichlorosilane ($F_{13}-OTS$) and (3, 3, 3-trifluoropropyl)trichlorosilane (FPTS), and coated on the silica surface in vapor phase. The commercial polymers, mr-I 7020 and 8020 (micro resist technology, GmbH), for thermal NIL were spin-coated on Si substrate with a rectangular island which was fabricated by conventional microfabrication process to achieve small contact area and easy alignment of flat contact sur- faces. Experimental conditions were similar to the process conditions of thermal NIL. When the polymer film on the island was separated from the silica surface after imprint process, the adhesion force between the silica surface and the polymer film was measured and the surfaces of the silica and the polymer film after the separation were observed. As a result, the anti-sticking layers remarkably reduced the adhesion force and the surface damage of polymer film and the chain length of silane affects the adhesion characteristics. The anti-sticking layers derived from FPTS and $F_{13}-OTS$ reduced the adhesion force per unit area to 38% and 16% of the silica sur-faces without an anti-sticking layer, respectively. The anti-sticking layer derived from $F_{13}-OTS$ was more effective to reduce the adhesion, while both of the anti-sticking layers prevented the surface damages of the polymer film. Finally, it is also found that the adhesion characteristics of mr-I 7020 and mr-I 8020 polymer films were similar with each other.

• 한국인쇄학회지
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• 제8권1호
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• pp.1-20
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• 1990

$\alpha$,$\beta$,$\varepsilon$ type copper phthalocy $\alpha$,$\beta$,$\varepsilon$ type copper phthalocyanine(CuPc) pigment was purified by a simple train sublimation technique. The layered photoconductor was made with $\varepsilon$ type CuPc as a carrier generation layer(CGL) and polyvinly carvazol(PVCz) as a carrier transport layer(CLT). A CGL of CuPc was electrochemical deposited on an Al substrate used as cathode in pigment dispersion solutions. a CTL of PVCz pwas spin coated on $\varepsilon$ type CuPc thin film by a spin coater. The effect of sonication time, electrophotographic property of the layered photoconductor were studied with surface coverage, surface potential and sensitivity.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.429-433
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• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.