• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
• /
• pp.17-17
• /
• 2003

Semiconductors with ferromagnetism at room temperature has been actively searched for in recent years; a prospect of devices using both charge and spin continuously gives impetus to the activities. Transition metal doped oxide materials have been of particular interest. Co substituted ZnO [1] and TiO$_2$ [2] thin films, for example, were reported to show ferromagnetic properties at room temperature. However, various studies do not seem to converge on a definite picture [3,4,5]. The issue is rather fundamental: whether a system shows ferromagnetic properties at all, and in case it does, whether the system possesses a close coupling between magnetism and transport properties. In this talk, we shall assess the current status of transition metal doped oxide materials as room temperature ferromagnetic semiconductors.

• Journal of Magnetics
• /
• 제6권1호
• /
• pp.1-4
• /
• 2001

We have used acetic acids ethanol and distilled water as a solvent to synthesize $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$(LSMFO) precursor. Crack-free LSMFO granular polycrystalline thin films have been deposited on thermally oxidized silicon substrates by spin coaling. The dependence of crystallization, surface morphology, magnetic and transport properties on annealing temperature was investigated. With increasing annealing temperature, the metal-semiconductor (insulator) transition temperature and the magnetic moment decrease while the resistivity increases. The lattice constants remain almost unchanged. For LSMFO thin films, spin-dependent interfacial tunneling and/or scattering magnetoresistance were observed. Our results indicate that the annealing temperature is very important in determining the intrinsic and extrinsic magnetotransport properties.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
• /
• pp.45-46
• /
• 2010

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2012년도 자성 및 자성재료 국제학술대회
• /
• pp.109-109
• /
• 2012

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
• /
• pp.49-49
• /
• 2002

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2008년도 Asian Magnetics Conference
• /
• pp.150.2-150.2
• /
• 2008

• Nuclear Engineering and Technology
• /
• 제53권10호
• /
• pp.3344-3351
• /
• 2021

The Rare Isotope Science Project was launched in 2011 in Korea toward constructing the Rare isotope Accelerator complex for ON line experiments (RAON). RAON will house several experimental systems, including the Muon Spin Rotation/Relaxation/Resonance (μSR) facility in High Energy Experimental Building B. This facility will use 600-MeV protons with a maximum current of 660 pμA and beam power of 400 kW. The key μSR features will facilitate projects related to condensed-matter and nuclear physics. Typical experiments require a few million surface muons fully spin-polarized opposite to their momentum for application to small samples. Here, we describe the design of a muon transport beam line for delivering the requisite muon numbers and the electromagnetic-component specifications in the μSR facility. We determine the beam-line configuration via beam-optics calculations and the transmission efficiency via single-particle tracking simulations. The electromagnet properties, including fringe field effects, are applied for each component in the calculations. The designed surface-muon beamline is 17.3 m long, consisting of 2 solenoids, 2 dipoles affording 70° deflection, 9 quadrupoles, and a Wien filter to eliminate contaminant positrons. The average incident-muon flux and spin rotation angle are estimated as 5.2 × 10⁶ μ⁺/s and 45°, respectively.

• 한국전기전자재료학회논문지
• /
• 제31권7호
• /
• pp.486-489
• /
• 2018

Solution-processed organic light-emitting diodes (OLEDs) have the advantages of low cost, fast fabrication, and large-area devices. However, most studies on solution-processed OLEDs have mainly focused on solution-processable hole transporting materials or emissive materials. Here, we report fully solution-processed green OLEDs including hole/electron transport layers and emissive layers. The electrical and optical properties of OLEDs based on solution-processed TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)) as the electron transport layer were investigated with respect to the spin speed and the number of layers. The performance of OLEDs with solution-processed TPBi exhibits a power efficiency of 9.4 lm/W. We believe that the solution-processed electron transport layers can contribute to the development of efficient fully solution-processed multilayered OLEDs.

• Journal of Magnetics
• /
• 제8권2호
• /
• pp.85-88
• /
• 2003

The magnetic and transport properties far single crystals of Ru-doped mono-layered manganites $La_{0.5}Sr_{1.5}-Mn_{1-x}Ru_xO_4$ (0$\leq$$\chi$$\leq$0.1) have been studied using neutron diffraction and magnetization measurements. Temperature dependent magnetization data reveal that with an increase in the Ru concentration the parent charge ordered antiferromagnetic state is gradually destroyed and new ferromagnetic phase evolves. In the low Ru-doped system spin glass behavior is apparent in low temperature region, which is confirmed by ac and do magnetization measurements. The competing magnetic interaction between Mn/Mn and Mn/Ru couples is the most likely cause of the spin glass transition.

• Journal of Magnetics
• /
• 제10권2호
• /
• pp.66-70
• /
• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.