• Journal of Sensor Science and Technology
• /
• v.22 no.3
• /
• pp.233-237
• /
• 2013

We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.

• Journal of Magnetics
• /
• v.13 no.1
• /
• pp.19-22
• /
• 2008

ZnO nanotips, grown on c-$Al_2O_3$ and quartz, were implanted variously with 200 keV Fe or Mn ions to a dose level of $5{\times}10^{16}cm^{-2}$. The magnetic properties of these samples were measured using a superconducting quantum interference device (SQUID) magnetometer. Fe-implanted ZnO nanotips grown on c-$Al_2O_3$ showed a coercive field width of 209 Oe and a remanent field of 12% of the saturation magnetization ($2.3{\times}10^{-5}emu$) at 300K for a sample annealed at $700^{\circ}C$ for 20 minutes. The field-cooled and the zero-field-cooled magnetization measurements also showed evidence of ferromagnetism in this sample with an estimated Curie temperature of around 350 K. The Mn-implanted ZnO nanotips grown on c-$Al_2O_3$ showed superparamagnetism resulting from the dominance of a spin-glass phase. The ZnO nanotips grown on quartz and implanted with Fe or Mn showed signs of ferromagnetism, but neither was consistent.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1379-1381
• /
• 1998

Powder electroluminescent device (PELD) structured conventionally dielectric and phosphor layer, between electrode and their layer fabricated by screen printing splaying or spin coating method. To promote performance of PELDs, we approached the experiments for different structure and thickness variation of PELD. Thickness variation($30{\mu}m{\sim}130{\mu}m$) was taken. To investigate electrical and optical properties of PELDs, EL spectrum, transferred charge density using Sawyer-Tower's circuit brightness was measured. Variation of structure in PELDs was as follows: WK-1 (ITO/BaTiO3/ZnS:Cu/Silver paste), WK-2 (ITO/BaTiO3/ZnS:Cu/BaTiO3/ZnS:Silver paste), WK-3 (ITO/BaTiO3/ZnS:Cu/BaTiO3/Silver paste), WK-4(ITO/BaTiO3+ZnS:Cu/Silver paste) As a result, structure of the highest brightness appeared WK-4 possessed 60 ${\mu}m$ thickness. The brightness was 2719 cd/$m^2$ at 100V, 400Hz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.123-126
• /
• 2003

Recently, there is a growing concern on the photovoltaic effects using organic materials. This is a phenomena which converts the solar energy into the electrical one. We have fabricated a device structure of $ITO/PEDOT:PSS/CuPc/C_{60}/BCP/AI$. The PEDOT:PSS layer is made by spin coating, and the other organic layers are made by thermal vapor deposition. By measuring the current-voltage characteristics with an illumination of light, we have obtained value of Voc=0.38V, Jsc=$0.5mA/cm^{2}$. And a fill factor and efficiency are about 0.314 and 0.083%, respectively. A 500W xenon lamp(ORIEL) is used for a light source, and the light intensity illuminated into the device was about 10mW.

• Current Photovoltaic Research
• /
• v.1 no.1
• /
• pp.59-62
• /
• 2013

We investigated the effects of ZnO thin film deposition methods on the performance of inverted polymer solar cells with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Al. The ZnO thin films were deposited by various methods (spin coating of nanoparticles, sol-gel process, atomic layer deposition) and their morphology was analyzed by atomic force microscopy (AFM). The device with ZnO nanoparticle thin films showed the highest power conversion efficiency of 3 % with low series resistance and high shunt resistance. The superior performance of the device with the ZnO nanoparticle layer is attributed to better electron extraction capability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.407-407
• /
• 2008

무기EL 디스플레이는 고체재료에 전계를 가했을 때 발광하는 현상을 이용한소자로서, 급속도로 발전을 거듭하고 있으나, 유전체층에 강한전계를 가하여 발광하여야 하므로 낮은 Breakdown voltage와 효율의 한계로 인하여 휘도가 낮고 풀 컬러화 디스플레이 등 의 응용에는 적용되고 있지 못하는 실정이다. 본 연구에서는 강유전체 Perovskite 구조를 가지는 ABO3 물질 중 PMN(Lead Magnesium niobate) 과 PZT (Lead Zirconate titanate) 후막을 제조하여 Inorganic EL(Electro Luminance)에 적용하고 소자의 광전특성을 평가하였다. 소자에 사용된 기판은 고온소성에 알맞은 알루미나(Al2O3)기판을 채택 하였으며, 그 위 하부전극으로는 고온소성에 따른 화학적 안정성이 우수한 Au전극을 Screen Printing 하였다. 제조 되어진 PMN후막 페이스트는 PMN(Pb(Mg1/2 Nb2/3)O3) + Glass Frit(Pb-Zn-B) + BaTiO3(99.99%) 로 합성되었으며 하부전극위에 인쇄하였다. 그 다음 PZT sol-gel을 Spin coating으로 도포 하였다. 형광체로 ZnS:Cu.Cl 을 Screen Printing을로 형성하였으며, 평탄화를 위하여 유기물 충을 Screen Printing 공정으로 성막 하였다. 상부전극으로는 DC sputter로 ITO를 증착하여 EL소자 완성 후 Spectro - Chroma meter로 소자특성을 측정하였다. 평탄화를 통한 유기물층에 변화되는 Capacitance를 Oscilloscope로 전압 전류 pulse의 변화에 따른 opto-electronic 특성을 평가하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.843-845
• /
• 2009

A polymeric host for triplet emitters composed of N-alkylcarbazole and tetramethylbenzene units was successfully synthesized. Efficient energy transfer was observed between this polymeric host and green phosphorescent dyes. The device fabricated using 5 wt% green 1 in the polymeric host as the emitting layer showed the best performance. Thin films of this host-guest system, exhibiting clear stripe patterns could be prepared through the LITI process. The patterned films were then used to fabricate electrophosphorescent devices, which show performance characteristics similar to those of spin-coated devices. The new host material is a good candidate to be used in polymer-based full-color electrophosphorescent light-emitting displays.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1511-1514
• /
• 2009

Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

• Journal of Information Display
• /
• v.6 no.4
• /
• pp.1-5
• /
• 2005

Perylene-based pyrrolopyrone derivative (PPD) was synthesized via condensation reaction with perylenetetracarboxylic dianhydride and 1,2-phenylenediarnine as n-type channel material. The structure of PPD was characterized by spectroscopic methods such FT-IR and $^1H$-NMR. PPD exhibited high thermal stability ($T_{d5wt%}: 560^{\circ}C$) and was found to be soluble only in protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. The PPD solution showed maximum absorption and emission at 601 and 628 nm, respectively. Thin film transistors were fabricated by vacuum deposition and solution casting method. The electron mobilities of the devices were achieved as high as $0.17{\times}10^{-6}cm^2/Vs$ for vacuum deposited device and $0.4{\times}10^{-6}cm^2/Vs$ for spin coated device, respectively.

• Journal of Information Display
• /
• v.4 no.1
• /
• pp.29-33
• /
• 2003

We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine (CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) in a device structure of $ITO/bufferr/TPD/Alq_3/Al$. Polymer PVK and PEDOT:PSS buffer layer were produced using the spin casting method where as the CuPc layer was produced using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature at various a thickness of the buffer layer. We observed an improvement in the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer were used, respectively. The enhancement of the efficiency is assumed to be attributed to the improved balance of holes and elelctrons resulting from the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer function as a hole-injection supporter and the PVK layer as a hole-blocking one.