• Current Photovoltaic Research
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• v.8 no.1
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• pp.1-5
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• 2020

The most important factor in enhancing the performance of an optical device is to minimize reflection and increasing transmittance of light for a broad wavelength range. The choice of appropriate coating material is crucial in decreasing reflection losses at the substrate. The purpose of this review is to highlight anti-reflection coating (ARC) materials that can be applied to silicon solar cell and glass substrate for minimizing reflection losses. The optical and electrical behavior of ARC on a substrate is highly dependent on thickness and refractive index (RI) of ARC films that are being deposited on it. The coating techniques and performance of single and multi-layered ARC films after coated on a substrate in a wide range of wavelength spectrum will be studied in the paper.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.5
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• pp.48-53
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• 2004

Spectral irradiance measurement system was developed to measure the spectral irradiance of optical sources in the wavelength range from 250[nm] to 1600[nm]. Our system is composed of source system, fore-optics, monochromator system, optical detector system, and automatic control system. Optical detector system with PMT, Si, InGaAs, and IR enhanced InGaAs detectors is used to measure the wide spectrum of optical sources in ultraviolet visible, and infrared wavelength regions. Spectral irradiance of the 1[kW] quartz-halogen tungsten lamp was measured and compared in the wavelength range from 250[nm] to 1600[nm]. The differences between our results and those reported by NIST are below 3[%], 3.5[%], and 5[%] in the wavelength range of 450∼700[nm], 700∼1600[nm], 250∼400[nm], respectively.

• Advances in nano research
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• v.13 no.5
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• pp.475-485
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• 2022

Crystalline silicon photovoltaic cells have advantages of zero pollution, large scale and high reliability. A major challenge is that sunlight wavelength with photon energy lower than semiconductor band gap is converted into heat and increase its temperature and reduce its conversion efficiency. Traditional cooling PV method is using water flowing below the modules to cool down PV temperature. In this paper, the idea is proposed to reduce the temperature of the module and improve the energy conversion efficiency of the module through the modulation of the solar spectrum. A spectrally selective nanofilm reflector located directly on the surface of PV is designed, which can reflect sunlight wavelength with low photon energy, and even enhance absorption of sunlight wavelength with high photon energy. The results indicate that nanofilm reflector can reduce spectral reflectivity integral from 9.0% to 6.93% in 400~1100 nm wavelength range, and improve spectral reflectivity integral from 23.1% to 78.34% in long wavelength range. The nanofilm reflector can reduce temperature of PV by 4.51℃ and relatively improved energy conversion efficiency of PV by 1.25% when solar irradiance is 1000 W/m². Furthermore, the nanofilm reflector is insensitive in sunlight's angle and polarization state, and be suitable for high irradiance environment.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.28-34
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• 2017

An NIR grism Si optical area sensor spectrometer with in-band reference wavelength is designed and fabricated. It is composed of a transmission type diffraction grating (spatial density 300 line/mm), a rectangular N-BK7 prism (apex angle 30 degree), NIR filter(cutoff wavelength 720 nm), an imaging convex lens(focal length 50 mm F1.8) and an IR modified DSLR camera (Canon EOS40D) of Si optical area sensor ($3,888{\times}2,592$ pixels, pixel size $5.710{\mu}m$). "In-band reference wavelength function" is implemented using non-dispersive 0th diffraction order optical beam. The NIR grism spectrometer is tested in a laboratory using a halogen lamp and a Neon lamp. And the spectrometer is used in an astronomy field for obtaining the planet Jupiter NIR spectrum. In-band reference wavelength i.e. un-deviation wavelength is 846 nm, an wavelength resolution is 0.3027 nm/pixel, an wavelength resolving power is 2,794 and an wavelength range is 650~1,000 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.32-35
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• 2011

Top-emission device has a merit of high aperture ratio and narrow emission spectrum compared to that of bottom-emission one. Emission spectra of top-emission organic light-emitting diodes depending on a layer thickness and view angle were analyzed using a theory of microcavity. Device structure was manufactured to be Al (100 nm)/TPD/$Alq_3$/LiF (0.5 nm)/Al (2 nm)/Ag (30 nm). N,N'-diphenyl-N,N'- di (m-tolyl)-benzidine (TPD) and tris (8-hydroxyquinoline) aluminium (Alq3) were used as a hole-transport layer and emission layer, respectively. And a thickness of TPD and Alq3 layer was varied in a range of 40 nm~70 nm and 60 nm~110 nm, respectively. Angle-dependent emission spectrum out of the device was measured with a device fixed on a rotating plate. Since the top-emission device has a property of microcavity, it was observed that the emission spectrum shift to a longer wavelength region as the organic layer thickness increases, and to a shorter wavelength region as the view angle increases. Layer thickness and view-angle dependent emission spectra of the device were analyzed in terms of microcavity theory. A reflectivity of semitransparent cathode and optical path length were deduced.

• Journal of Biosystems Engineering
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• v.33 no.4
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• pp.269-275
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• 2008

This study was conducted to design an impedance sensor that can measure soil water content of soils. Partial least square regression (PLSR) was applied to soil impedance data preprocessed with a smoothing method. An optimal sub-spectrum size and wavelength range were determined by comparing the coefficient of determination ($R^2$) and root mean square error (RMSE) of the PLSR models obtained using soil impedance data. various PLS analysis. Based on the PLSR analysis, it would be concluded that the optimal spectrum measurement range was $32.0{\sim}50.0\;MHz$ with the optimal sub-spectrum size of about 18.5 MHz.

• Journal of Surface Science and Engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Journal of IKEEE
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• v.23 no.2
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• pp.606-613
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• 2019

In this paper, a new method for flat sweeping automatic hold of wavelength swept laser has proposed. Through the performance test on the implemented laser, even 5 hours passed, the flat sweeping has held up well, and 56nm flat sweeping range, 1kHz sweeping frequency, and 8.8mW average optical power were obtained. This showes that the proposed can eliminate the necessity of hand-operated polarization control required for previous swept lasers in case of long time operation and also optical spectrum analyzer needed to monitor the sweeping spectrum status.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.341-342
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• 1996

We present here the solar LOG GF values obtained using the Liege solar at las and the standard solar photospheric models for the spectral lines in the wavelength range ${\lambda}{\lambda}$ 6209 - 6273 ${\AA}$. These log gf values shall be used to interpret a high resolution spectra of the star $\gamma$ Draconics.