• 분석과학
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• 제13권4호
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• pp.494-503
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• 2000

암 억제제인 $p16^{INK4A}$ 단백질의 활성부위 84-104번까지의 21개 아미노산으로 이루어진 펩타이드를 합성하여, 이것의 용액상 구조를 CD, $^1H$ NMR 분광법 그리고, 분자 모델링 방법으로 분석하였다. CDK4 그리고 CDK6와 함께 안정된 complex를 형성하는 p16의 활성 펩타이드(84-104 아미노산)는 in vitro에서 pRb를 인산화하는 CDK4/6의 능력을 차단하고, p16단백질의 기능에서 보여주듯이 G1/S상의 세포 Cycle을 차단한다. NOE를 포함하는 $^3J_{NH{\alpha}}$ 스핀결합 상수, $C_{\alpha}H$ 화학적 이동, 아마이드 화학적 이동의 평균 변화 폭 그리고 온도 계수 등은 p16 펩타이드의 이차구조가 helix-turn-helix의 구조를 구성하는 p16단백질과 유사한 2차 구조를 가지고 있음을 보여주었다. NOE에 근거한 거리 및 이면각을 이용한 3.D 기하구조는 p18이나 p19의 대응하는 부위에 대한 결정구조에서 보여준 바와 같이 아미노산 $Gly^{89}-Leu^{91}$(${\varphi}_{i+1}=-79.8^{\circ}$, ${\varphi}_{i+1}=60.2^{\circ}$)사이에는 ${\gamma}$-회전구조를 형성함을 보여주었다. 이렇게 비교적 단단한 구조를 형성하고 있는 ${\gamma}$-회전구조부위는 p16펩타이드 구조를 안정시키며, CDK를 인식하는 부위로 작용할 수 있다. 이러한 ${\gamma}$-회전구조는 항암제 선도물질을 개발하는데 유용하게 활용될 수 있을 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).